- Tytuł:
- Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier
- Autorzy:
-
Yakuphanoglu, F.
Shah, M.
Aslam Farooq, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1493722.pdf
- Data publikacji:
- 2011-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.07.Pr
78.40.Me - Opis:
- The electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by current-voltage, capacitance-voltage and conductance-voltage methods. The values of ideality factor and barrier height of the diode were determined from the current-voltage characteristics and found as 2.32 and 0.77 eV, respectively. These values were also determined from Cheung's functions and Norde's method due to the non-ideal behavior of the diode. The electronic parameters obtained from the various methods indicate a good consistency with each other. The density of interface states for Al/p-Si/P3HT/Ag organic-on-inorganic diode was found to be $7.64 × 10^{10} cm^{-2} eV^{-1}$. The obtained electrical parameters of the Al/p-Si/P3HT/Ag organic-on-inorganic diode are higher than that of the conventional Ag/p-Si Schottky diodes. This indicates that the electrical properties of the silicon Schottky diodes can be controlled using organic interfacial layer.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 3; 558-562
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł