Autor: Artunç, E. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Elastic Scattering in Kane Type Semiconductor Circular Dots
Autorzy:: Babanlı, A.
Artunç, E.
Kasalak, T.
Powiązania:: https://bibliotekanauki.pl/articles/1399171.pdf
Data publikacji:: 2015-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.22.Pr
73.20.D-
Opis:: In this paper we have investigated the scattering of electrons by a circular narrow penetrable δ-type potential barrier in $A^{3}B^{5}$ type semiconductors by using three-band Kane model. By using the Kane equations with the continuous conditions of the wave functions and flux discontinuous at the interface of two circular dots, we have analytically calculated the total cross-section and the Boltzmann conductivity for the semiconductor quantum rings with delta potential barrier. It has been shown that the quasi-bound states appear as peaks in the cross-section.
Źródło:: Acta Physica Polonica A; 2015, 127, 3; 811-814
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Preparation of Fine-Grained Silicon-Nitride Ceramics and their Characterization by Depth-Sensing Indentation Tests
Autorzy:: Şahin, O.
Güder, H.
Uzun, O.
Şahin, E.
Sopicka-Lizer, M.
Göçmez, H.
Artunc, E.
Powiązania:: https://bibliotekanauki.pl/articles/1402391.pdf
Data publikacji:: 2015-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.20.-x
62.20.de
81.05.Je
Opis:: Both pressureless-sintered and dense, fine-grained silicon nitride ceramics were produced from mechanochemically activated nitride-based precursors. Scanning Electron Microscopy (SEM), Transmition Electron Microscopy (TEM), X-Ray Diffraction (XRD) and an ultra-low load microhardness tester were used to characterize these ceramics. Depth-sensing indentation (DSI) tests in the range of 200-1800 mN were performed on the silicon nitride ceramic to determine dynamic hardness (H_d) and reduced elastic modulus (E_r) values. These values were deduced by analyzing the unloading segments of the DSI curves. It was found that both H_d and E_r exhibits a significant indentation load dependence. Nix-Gao (NG) model was used to analyze the dynamic hardness data in the calculation of the load independent hardness value.
Źródło:: Acta Physica Polonica A; 2015, 128, 2B; B-355-B-359
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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