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Wyszukujesz frazę "Andreev, V. G." wg kryterium: Autor


Wyświetlanie 1-7 z 7
Tytuł:
Breast cancer imaging by means of optoacoustic technique: initial experience
Autorzy:
Andreev, V. G.
Oraevsky, A. A.
Karabutov, A. A.
Powiązania:
https://bibliotekanauki.pl/articles/332227.pdf
Data publikacji:
2001
Wydawca:
Polskie Towarzystwo Akustyczne
Opis:
A clinical prototype of the laser optoacoustic imaging system (LOIS) for breast cancer detection with 32-element transducer array is described. The frequency band of transducer array provided 0.5-mm axial in-depth resolution. Cylindrical shape of the 10-cm long array enabled us to receive the lateral resolution of 1.0 mm in the vicinity of focal zone. The system sensitivity provided detection of a 2-mm absorbing sphere at the depth of 60mm. An automatic recognition of the optoacoustic signal detected from the irradiated surface was implemented in order to visualize the breast surface and improve the accuracy of tumor localization. Radial back-projection algorithm was used for image reconstruction. Optimal filtering of image was employed to reduce low and high frequency noise. Time necessary for data acquisition and image reconstruction was reduced to 32 sec. The system performance was evaluated initially by imaging of the small absorbing objects in breast tissue-like phantoms. Clinical ex-vivo studies of mastectomy specimens were performed and compared with X-ray radiography and ultrasound.
Źródło:
Hydroacoustics; 2001, 4; 1-4
1642-1817
Pojawia się w:
Hydroacoustics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments
Autorzy:
Andreev, D.
Bondarenko, G.
Andreev, V.
Maslovsky, V.
Stolyarov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1030209.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.20.Jv
73.20.At
73.40.Qv
73.40.Ty
77.22.Jp
77.55.-g
Opis:
Methods to modify gate dielectrics of MIS structures by irradiation treatments and high-field electron injection into dielectric are considered. In addition, distinctive features of these methods used to correct parameters of MIS devices are studied. It was found out that negative charge, accumulating in the thin film of phosphosilicate glass (PSG) of the MIS structure having a two-layer gate dielectric SiO_2-PSG under the high-field injection or during the irradiation treatment can be used to correct the threshold voltage to improve the charge stability and raise the voltage of breakdown for the MIS devices. It is proved that the density of electron traps rises with the increasing thickness of the PSG film. In this paper a method to modify electrophysical characteristics of MIS structures by the high-field tunnel injection of electrons into the gate dielectric under the mode of controlled current stress is proposed. The method allows to monitor changing of MIS structure parameters directly during the modification process.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 245-248
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
Autorzy:
Andreev, V.
Bondarenko, G.
Maslovsky, V.
Stolyarov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402221.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.40.Gk
Opis:
Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO₂-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO₂ film.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 887-890
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments
Autorzy:
Andreev, V.
Bondarenko, G.
Maslovsky, V.
Stolyarov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1381776.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.40.Gk
Opis:
The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric $SiO_2$-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the $SiO_2$ film and $Si-SiO_2$ interface.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1371-1373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure and Properties of Multilayer Nanostructured Coatings TiN/MoN Depending on Deposition Conditions
Autorzy:
Pogrebnjak, A.
Abadias, G.
Bondar, O.
Postolnyi, B.
Lisovenko, M.
Kyrychenko, O.
Andreev, A.
Beresnev, V.
Kolesnikov, D.
Opielak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1365941.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.-w
62.20.Qp
62.25.-g
Opis:
This work presents the results of TiN/MoN coatings studying. These multilayer nanostructured coatings demonstrate dependence on depositions conditions on nanometer level. The influence of nanosized monolayer thickness on structure changing and properties of nanocomposite multilayer coatings TiN/MoN was found. Multilayer TiN/MoN coatings of the total thickness from 6.8 to 8.2 μm were obtained using C-PVD method. Thicknesses of monolayers were 2, 10, 20, 40 nm. The structure of samples was studied using X-ray diffraction (Bruker D-8 Advance) in Cu $K_{α}$ radiation, high resolution transmission electron microscopy with diffraction CFEI EO Techai F200, scanning electron microscopy with energy dispersive X-ray spectroscopy (JEOL-7001F), and microhardness measurements in dependence on indenter load. Scratch tests (friction, wear, etc.) were also provided using Rockwell-C diamond indenter (CSM Revetest Instruments) with a tip radius of 200 μm. Friction and wear behavior were evaluated using ball-on-plate sliding test on a UMT-3MT tribometer (CETR, USA). With decreasing monolayer thickness the hardness value increases, and the size of nanograins reduces. The values obtained for the friction coefficient of the multilayer system is much smaller than in nanostructured coatings of TiN (nc) or MoN (nc). Annealing showed formation of a (Ti,Mo)N solid solution and small growth of nanocrystals.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1280-1283
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Practice of Geobotanical Indication of Forest Growth Conditions in the Steppe and Wooded Steppe Ecotone in Central Mongolia
Autorzy:
Gunin, Petr D.
Bazha, Sergey N.
Miklyaeva, Inessa M.
Karimova, Tatiana Y.
Petukhov, Igor A.
Andreev, Anatoly V.
Bogdanov, Evgenij A.
Tsyrempilov, Enkhe G.
Powiązania:
https://bibliotekanauki.pl/articles/124792.pdf
Data publikacji:
2020
Wydawca:
Polskie Towarzystwo Inżynierii Ekologicznej
Tematy:
Baikal catchment basin
ecosystems
belt groups of plants
zonal groups of plants
environmental conditions
humidity factor
Opis:
The forest conditions in the Central Aimag of Mongolia, located in the southern part of the Baikal catchment area, near the southern border of the forest-steppe subzone, were examined within the framework of this study. The field materials collected in the summer 201–2018 at the Zuunmod Model polygon serve as the core of the study. An ecosystem map of the Model polygon with the scale 1:50 000 and the Key plot with the scale 1:5 000 was drawn up using World Viеw-2 satellite imagery data (2016). The proven method of botanical indication of forest growth conditions is as follows: identification of the ecologic and coenotic groups of plant species, calculation of the moisture coefficient based on the ratio of the number of species included in the groups characterizing the extreme conditions of the moisture gradient and distribution of communities in accordance with the values of the gradient in the ecological series. Communities of stages of ecological series serve as indirect indicators of the forest conditions: Stage I: Кu <1, insufficient humifying for tree growth, Stage II: Кu 1–2, average humifying, Stage III: Кu >2, sufficient humifying for tree growth. The stages also correspond to the landscape conditions and the character of the vegetation cover.
Źródło:
Journal of Ecological Engineering; 2020, 21, 2; 10-21
2299-8993
Pojawia się w:
Journal of Ecological Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Absorption and Photoluminescence in Quantum Dots and Artificial Molecules
Autorzy:
Firsov, D.
Vorobjev, L.
Panevin, V.
Fedosov, N.
Shalygin, V.
Samsonenko, J.
Tonkikh, A.
Cirlin, G.
Andreev, A.
Kryzhanovskaya, N.
Tarasov, I.
Pikhtin, N.
Ustinov, V.
Hanna, S.
Seilmeier, A.
Julien, F.
Zakharov, N.
Werner, P.
Powiązania:
https://bibliotekanauki.pl/articles/2041673.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
Opis:
Intraband absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers is studied both experimentally and theoretically. The absorption cross-section for p-type quantum dots was found to be significantly smaller than that for n-type quantum dots. Interband absorption bleaching under strong interband excitation is found and investigated in undoped quantum dot structures. Structures with artificial molecules were grown. Photoluminescence spectra and transmission electron microscopy images proves the presence of coupled symmetrical quantum dots.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 158-162
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-7 z 7

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