Autor: Anbinderis, T. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Non-Destructive Material Homogeneity Evaluation Using Scanning Millimeter Wave Microscopy
Autorzy:: Laurinavičius, A.
Anbinderis, T.
Ikonikova, J.
Prishutov, Yu.
Powiązania:: https://bibliotekanauki.pl/articles/1813405.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.70.Gq
81.70.Ex
Opis:: Millimeter wave bridge technique for non-destructive material homogeneity characterization is described. The idea of this technique is the local excitation of the millimeter waves in the testing material and the measurement of the transmitted (reflected) wave amplitude and phase in different places of it, i.e. the material plate is scanned by the beam of the millimeter waves. The results of the homogeneity measurements for dielectric wafers according to dielectric constant anisotropy are presented. The measurement technique sensitivity is discussed.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 1051-1054
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Mesoscopic Structures for Microwave-THz Detection
Autorzy:: Sužied.elis, A.
Ašmontas, S.
Požela, J.
Kundrotas, J.
Širmulis, E.
Gradauskas, J.
Kozič, A.
Kazlauskaité, V.
Anbinderis, T.
Powiązania:: https://bibliotekanauki.pl/articles/1813189.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.Fg
73.40.Kp
73.50.Lw
73.63.Kv
Opis:: Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 803-809
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Influence of Magnetic Field on Detection Properties of Planar Microwave Diodes
Autorzy:: Sužiedėlis, A.
Ašmontas, S.
Požela, J.
Gradauskas, J.
Nargelienė, V.
Paškevič, Č.
Derkach, V.
Golovashchenko, R.
Goroshko, E.
Korzh, V.
Anbinderis, T.
Powiązania:: https://bibliotekanauki.pl/articles/1506099.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
78.70.Gq
75.47.Pq
73.40.Kp
73.40.-c
75.70.-i
Opis:: The results of experimental investigation of detection properties of the planar microwave diodes of various configuration on DC magnetic field are presented in this paper. The detection of microwave radiation was measured at 51 GHz, 72 GHz and 144 GHz frequencies. The magnetic field was applied in plane and perpendicularly to the plane of the diodes. The experiment was performed at room temperature. Dependence of the detected voltage of the diodes on the magnetic field had asymmetric character with respect to the polarity of the magnetic field. This fact allowed us to suspect the magnetic rectification influencing the detected voltage. Therefore, average value of the detected voltage with respect to the polarity of the applied magnetic field gives its dependence on the applied magnetic field.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 218-221
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes
Autorzy:: Valušis, G.
Seliuta, D.
Tamošiūnas, V.
Širmulis, E.
Balakauskas, S.
Gradauskas, J.
Sužiedėlis, A.
Ašmontas, S.
Anbinderis, T.
Narkūnas, A.
Papsujeva, I.
Lisauskas, A.
Roskos, H. G.
Köhler, K.
Powiązania:: https://bibliotekanauki.pl/articles/2041684.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
85.30.De
72.30.+q
Opis:: We suggest a novel approach to detect broad band, 0.078-2.52 THz, electromagnetic radiation at room temperature using an asymmetrically-shaped bow-tie diode based on a modulation-doped GaAs/AlGaAs structure. We show that the voltage sensitivity in the range from 0.078 THz up to 0.8 THz has a plateau and its value is within 0.3-0.5 V/W. We consider the bow-tie diode design to increase the sensitivity of the device.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 184-187
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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