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    Wyświetlanie 1-5 z 5
    Tytuł:
    On negative differential mobility in nanophotonic device functionality
    Autorzy:
    Anagnostakis, E. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1955299.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Gdańska
    Tematy:
    nanophotonics
    two-dimensional electron gas
    semiconductor-device nanointerface
    negative differential mobility
    optoelectronics nanotechnology
    Opis:
    The negative differential mobility (NDM) of two-dimensional carrier-gas against some proper external regulator allowing gradual controlled modification of the nanointerfacial environment tends to occur as interwoven with the nanophotonic device functionality. In this work, several instances from our two-decade principal research of both experimental observation and conceptual prediction concerning nanophotonics NDM are reconsidered towards outlining a global potential for the appearance of the effect.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2013, 17, 3-4; 131--137
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Finite difference method determination of the nano-hetero-interface wave-function engineering of inter-subband LASER functionality
    Autorzy:
    Anagnostakis, E. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1954084.pdf
    Data publikacji:
    2004
    Wydawca:
    Politechnika Gdańska
    Tematy:
    finite difference method
    Sturm-Liouville eigensystem
    nano-hetero-interface wave-function
    Opis:
    A novel LASER action nano-hetero-structure of the inter-subband, mid-infrared functionality type is designed on the basis of optically pumped dual resonant tunnelling of conductivity electrons within an appropriately energetically determined scheme of five subbands hosted by two communicating asymmetric, approximately rectangular quantum wells (QWs). The upper LASER action level employed is the second excited subband of the nanostructure's back, wider QW and is provided with electrons via resonant tunnelling from the first excited subband of the nanostructure's front QW populated through remotely ignited optical pumping out of the local fundamental subband. The first excited back QW subband functions as the lower LASER action level, directly delivering the received electrons to the local fundamental subband - via fast vertical longitudinal optical phonon scattering - wherefrom they are being recycled back to the nanostructure's front QW fundamental subband by virtue of a second-reverse sense-resonant tunnelling-mediated normal charge transport mechanism. The handling of the de Broglie wave-function problem evolves into a numerical calculation of a Sturm-Liouville eigensystem solved by means of a finite difference method employing an appropriate tridiagonal coefficient matrix.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2004, 8, 3; 385-392
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On a nanophotonic response descriptor
    Autorzy:
    Anagnostakis, E. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933940.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Gdańska
    Tematy:
    nanodevices
    photonic response
    optoelectronics
    nanophotonics
    Green's functions
    Fredholm kernel
    Opis:
    The photonic response exhibited by typical semiconductor nanodevices is modeled through a notionally universal descriptor by virtue of the Green’s function associated with the generic complete, inhomogeneous differential equation. It is derived that the photoresponse evolution is expressible as the sum of saturation-limiting linear nanophotonic behavior and a linear superposition of eigenfunctions of the respective homogeneous Fredholm integral equation.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2013, 17, 1-2; 91-94
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    InP:Fe Nanodiode conductivity current persistent photoenhamcement decey
    Autorzy:
    Zardas, G. E.
    Anagnostakis, E. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1955298.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Gdańska
    Tematy:
    photonic nanodevices
    persistent photoconductivity
    Opis:
    The temporal decay of the persistent photoenhancement of the conductivity current flowing through the active channel of two samples of a typical nanodevice comprising a low resistivity n-type InP:Fe epitaxial layer and a semi-insulating InP:Fe substrate is experimentally investigated at room temperature and interpreted via consideration of the functionality of the diodic interface potential barrier. A mean decay mechanism and its distinct regimes are singled out.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2013, 17, 3-4; 139--143
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Resonance and Dielectric Studies of a Nonlinear La$\text{}_{3}$Ga$\text{}_{5.5}$Ta$\text{}_{0.5}$O$\text{}_{14}$ Single Crystal Doped with Erbium
    Autorzy:
    Bodziony, T.
    Typek, J.
    Orlowski, M.
    Majszczyk, J.
    Wabia, M.
    Berkowski, M.
    Ryba-Romanowski, W.
    Guskos, N.
    Likodimos, V.
    Anagnostakis, E. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035732.pdf
    Data publikacji:
    2003
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    76.30.Kg
    77.22.Ch
    Opis:
    Single crystal of erbium doped La$\text{}_{3}$Ga$\text{}_{5.5}$Ta$\text{}_{0.5}$O$\text{}_{14}$ grown by the Czochralski method have been investigated by electron paramagnetic resonance and dielectric spectroscopy methods. Dielectric permittivity ε measurements performed in 90-440 K temperature range have shown negligible dispersion for 1 kHz - 1 MHz frequencies and a Curie-Weiss type behaviour with C=47700 K andθ=-340 K. Electron paramagnetic resonance studies have revealed the presence of two different paramagnetic, monoclinic centres. The calculated g factor values are: g$\text{}_{1}$=1.449, g$\text{}_{2}$=11. 534, g$\text{}_{3}$=4.24 for the main M$\text{}_{1}$ centre and g$\text{}_{1}$=1.98, g$\text{}_{2}$=4.169, g$\text{}_{3}$=4.25 for the weaker M$\text{}_{2}$ centre. The temperature dependence of EPR line intensity for centre M$\text{}_{1}$ and M$\text{}_{2}$ is quite different - while lines attributed to M$\text{}_{1}$ could only be observed at low temperatures, below 20 K, lines of M$\text{}_{2}$ centre persisted up to 200 K. The M$\text{}_{1}$ centre is connected with Er$\text{}^{3+}$ ion entering substitutionally into La$\text{}^{3+}$ site, while M$\text{}_{2}$ is probably connected with 3d ions at the same site, unintentionally introduced into the material as an admixture.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 2-3; 315-322
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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