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Wyszukujesz frazę "Amine, Afaf" wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Identification of Groundwater Potential Zones (GWPZ) Using Geospatial Techniques and AHP Method: a Case Study of the Boudinar Basin, Rif Belt (Morocco)
Autorzy:
Taher, Morad
Mourabit, Touafik
Etebaai, Issam
Dekkaki, Hinde Cherkaoui
Amarjouf, Najat
Amine, Afaf
Abdelhak, Bourjila
Errahmouni, Ali
Azzouzi, Sadik
Powiązania:
https://bibliotekanauki.pl/articles/2203959.pdf
Data publikacji:
2023
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
GIS
remote sensing
Rif belt
sustainable development
water scarcity
Opis:
The present study aims to delineate the groundwater potential zones (GWPZ) in the Boudinar Basin using geospatial techniques and through an analytical hierarchal process (AHP) method. For multi criteria decision analysis, fifteen thematic layers were integrated into a geographic information system (GIS) environment. In this analysis, each thematic layer is calculated for normalized weights. Furthermore, the consistency index and consistency ratio were calculated to ensure that the result was significant and reliable. The GWPZ map has been categorized into three classes: poor (50.82%), moderate (49.06%), and good (<1.00%). To compare the result, we used four other scenarios of the GWPZ. Two of them are the most similar to our result. Finally, predictive groundwater production and management strategies that ensure long-term sustainability are highly needed.
Źródło:
Geomatics and Environmental Engineering; 2023, 17, 3; 83--105
1898-1135
Pojawia się w:
Geomatics and Environmental Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural, morphological and photoluminescent properties of Nd-coated silicon nanostructures
Autorzy:
Mefoued, Amine
Mahmoudi, Bedra
Benrekaa, Nasser
Tiour, Faiza
Menari, Hamid
Naitbouda, Abdelyamine
Manseri, Amar
Brik, Afaf
Mezghiche, Salah
Debbab, Moustafa
Powiązania:
https://bibliotekanauki.pl/articles/2204154.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
silicon nanostructures
silicon nitride
neodymium
SEM/EDS
SIMS
Raman spectroscopy
photoluminescence
Opis:
The structural, morphological and photoluminescent properties of thermally evaporated neodymium oxide (Nd₂O₃) thin films deposited onto nanostructured silicon (Si-ns) are reported. Si-ns embedded in silicon nitride (SiN) thin films are prepared by plasma-enhanced chemical vapour deposition (PECVD). SiN and Nd₂O₃ thin films uniformity and Si-ns formation are confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The presence of neodymium (Nd), silicon (Si), oxygen (O), and phosphorus (P) is investigated by energy-dispersive spectroscopy (EDS) and secondary ion mass spectrometry (SIMS). Post-annealing SIMS profile indicates an improvement of the homogeneity of activated P distribution in Si bulk. The X-ray diffraction (XRD) combined with Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) have been employed to determine amorphous silicon (a-Si), crystalline silicon (c-Si), Nd₂O₃ and SiN phases present in the Nd₂O₃-SiN bilayers with their corresponding chemical bonds. After annealing, a Raman shift toward lower wavenumbers is recorded for the Si peak. XPS data reveal the formation of Nd₂O₃ thin films with Nd-O bonding incorporating trivalent Nd ions (Nd3+). Strong room-temperature photoluminescence is recorded in the visible light range from the Si-ns. Nd-related photoluminescent emission in the near infrared (NIR) range is observed at wavelengths of 1025-1031 nm and 1083 nm, and hence is expected to improve light harvesting of Si-based photovoltaic devices.
Źródło:
Opto-Electronics Review; 2023, 31, 1; art. no. e145096
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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