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Wyszukujesz frazę "Altinsoy, I." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Gas Nitriding Behaviour of 34CrAlNi7 Nitriding Steel
Autorzy:
Altinsoy, I.
Onder, K.
Celebi Efe, F.
Bindal, C.
Powiązania:
https://bibliotekanauki.pl/articles/1219733.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Bx
81.65.Lp
Opis:
In this study, gas nitriding behavior of 34CrAlNi7-10 steel was investigated. Single stage processes were carried out at 500°C, 520C and 540C for 10, 20, 30 h, respectively. Nitrogen activity on surface was controlled by the nitriding potential $K_{N}$ which is known as thermodynamical control parameter for controlled gas nitriding process. The presence of nitrides formed on surface of test material was determined by X-ray diffraction analysis technique. The morphology of nitrided layer was studied by optical microscope. The microhardness of surface of nitrided sample in $HV_1$ was observed between 975 and 1132. Choosing the right nitriding potentials for each temperature, which give the same nitrogen concentration and activity on surface by using the Lehrer diagram, showed that all the samples had almost the same surface roughness of $R_{a}$ = 0.28-0.32 μm after gas nitriding cycles. The measurements showed that the white layer thickness varies between 4.38 μm and 28.80 μm and the growth of the layer was strongly affected by process time and temperature. Diffusion depths as Nht (HV) for each experiment were determined and compared.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 414-416
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Double Stage Nitriding on 34CrAlNi7-10 Nitriding Steel
Autorzy:
Altinsoy, İ.
Çelebı Efe, G.
Yener, T.
Önder, K.
Bindal, C.
Powiązania:
https://bibliotekanauki.pl/articles/1031228.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.BX
81.65.LP
81.70.BT
Opis:
In this study, effect of double stage gas nitriding of 34CrAlNi7-10 steel was analyzed. Nitriding processes were carried out in two stages. in the first stage, samples were nitridied at 500°C for 10 h and then in second stage nitriding process was continued at 530 and 550°C for 20 h. During both stages, the nitrogen activity on surface was controlled by the nitriding potential, which is a thermodynamical control parameter for controlled gas nitriding process. The nitriding potential was kept constant, at value of 10, during the first stage and was varied in the range of 3.2-0.2, for both nitriding temperatures, in the second stage. The presence of nitrides, formed on the surface of test materials was determined by XRD analysis technique. The morphology of nitrided layer was studied by optical microscopy. The microhardness of the surfaces of nitrided samples in HV1 was between 955 and 1029. The measurements have shown that the thickness of the compound layer (white layer) has varied between 6.85-23.90 μm and that the growth of the white layer and microhardness gradient were strongly affected by the nitriding potential and the temperature. Diffusion depths as Nht(HV) for Vickers Hardness were determined and compared.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 663-666
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effects of SiC Particle Size on Properties of Cu-SiC Metal Matrix Composites
Autorzy:
Celebi Efe, G.
Altinsoy, I.
Ipek, M.
Zeytin, S.
Bindal, C.
Powiązania:
https://bibliotekanauki.pl/articles/1491445.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ni
81.20.Ev
Opis:
This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700°C. Scanning electron microscopy studies showed that SiC particles were dispersed in copper matrix homogeneously. The presence of Cu and SiC components in composites were verified by X-ray diffraction analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0% to 95.0% for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 30 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (international annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 251-253
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Evaluation of Cu-B₄C Composites Manufactured by Powder Metallurgy
Autorzy:
Yener, T.
Altinsoy, I.
Yener, S.
Celebi Efe, G.
Ozbek, I.
Bindal, C.
Powiązania:
https://bibliotekanauki.pl/articles/1401279.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ni
81.20.Ev
72.80.Tm
Opis:
In this study, the influences of B₄C ratios on some mechanical and physical properties such as relative density, microhardness and electrical properties of cold pressed Cu-B₄C composites were investigated. Curve fitting is applied for the estimation of electrical conductivity. Commercial copper powders with 40 μm particle size were reinforced with B₄C, with particle size of 40 μm, at ratios of 1, 2, 3 wt.%, for improving mechanical properties of copper used as electrical conductor. Cu-B₄C composites have been fabricated by powder sintering process at a temperature of 900°C for 2 h. The presence of Cu and B₄C, which are dominant components in the sintered composites, were confirmed by X-ray diffraction analysis technique and SEM-EDS. Scanning electron microscope (SEM-EDS) has shown that B₄C particles are distributed homogenously in the copper matrix. The relative densities of Cu and Cu-B₄C composites, sintered at 900°C, ranged from 95.7 to 91.6%. Microhardness of composites ranged from 84.5 to 94.6 HB. It was observed that cold pressed Cu-1 wt.% B₄C composites revealed promising physical properties. Results of electrical conductivity measurement of Cu-B₄C composite material are compared to the results of the model and the overall accuracy level above 96% is obtained.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1045-1047
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparing of Commercial and Cemented Cu-SiC Composites
Autorzy:
Celebi Efe, G.
Altinsoy, I.
Yener, T.
Ipek, M.
Zeytin, S.
Bindal, C.
Powiązania:
https://bibliotekanauki.pl/articles/1287723.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Bx
81.05.Je
81.05.Ni
Opis:
SiC with 30 μm particle size reinforced copper composites have been fabricated by powder metallurgy method and sintered at 700C for 2 h in open atmosphere. Copper powder was produced by cementation method and obtained as commercial for comparing. Cemented and commercial copper powders were reinforced with SiC having 30 μm particle size at ratios of 0, 1, 2, 3, and 5 wt% for improving mechanical properties of copper without decreasing the electrical conductivity. The presence of Cu and SiC which are dominant components in the sintered composites were confirmed by X-ray diffraction analyses technique. Scanning electron microscope showed that SiC particles are distributed homogeneously in the copper matrix. The relative densities of Cu and Cu-SiC composites sintered at 700C are ranged from 98.0% to 96.2% for commercial Cu-SiC composites, 97.55 to 95.0% for cemented Cu-SiC composites, microhardness of composites ranged from 133 to 277 HV for commercial Cu-SiC composites and 127 to 229 HV for cemented Cu-SiC composites, and the electrical conductivity of composites changed between 95.6%IACS and 77.2%IACS for commercial Cu-SiC composites, 91.7%IACS and 69%IACS for cemented Cu-SiC composites. It was observed that there is a good agreement between cemented Cu-SiC and commercial Cu-SiC composites.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 417-419
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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