- Tytuł:
- A Contribution of Thermoelectric Properties of the Quaternary Chalcogenide Compound Tl_2GaInSe_4 Crystal
- Autorzy:
- Al Orainy, R.
- Powiązania:
- https://bibliotekanauki.pl/articles/1399313.pdf
- Data publikacji:
- 2013-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 74.25.fc
- Opis:
- Thermoelectric transport measurements were made on single crystal samples of $Tl_2GaInSe_4$. The crystal was prepared by a special design based on the Bridgman technique. Measurements of thermoelectric power were carried out in a special high vacuum-tight calorimeter when the direction of temperature gradient is perpendicular to the cleavage plane. The measurements covered a temperature range extending from 300 to 725 K. The results indicate P-type conductivity for our investigated samples. At room temperature the value of thermoelectric power was 735 μV/deg. The electron to hole mobility ratio was found to be 1.35. The effective mass of holes at room temperature was evaluated as $4.635 \times 10^{-29}$ kg, while for electron was equal to $8.468 \times 10^{-31}$ kg. The relaxation time of majority and minority carriers was estimated as $\tau_p= 2.968 \times 10^{-10}$ s and $\tau_n= 7.326 \times 10^{-12}$ s, respectively. Also, the diffusion coefficient of holes and electrons at room temperature was calculated and found to be 265.132 $cm^2$/s and 358.139 $cm^2$/s, respectively. The diffusion length of holes and electrons are found to be $L_p=2.805 \times 10^{-4}$ cm and $L_n=5.122 \times 10^{-5}$ cm. In addition to these pronounced parameters, the efficiency of thermoelectric element (figure of merit) was evaluated which leads to better applications in many fields.
- Źródło:
-
Acta Physica Polonica A; 2013, 124, 4; 728-731
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł