Autor: Adomavic̆ius, R. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications
Autorzy:: Adomavičius, R.
Balakauskas, S.
Bertulis, K.
Geižutis, A.
Molis, G.
Krotkus, A.
Powiązania:: https://bibliotekanauki.pl/articles/2041645.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
07.57.Hm
78.47.+p
Opis:: Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 128-131
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Terahertz Emission from Narrow Gap Semiconductors Photoexcited by Femtosecond Laser Pulses
Autorzy:: Adomavičius, R.
Urbanowicz, A.
Molis, G.
Krotkus, A.
Powiązania:: https://bibliotekanauki.pl/articles/2041649.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
07.57.Hm
78.47.+p
72.30.+q
Opis:: Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping levels of approximately 10$\text{}^{16}$-10$\text{}^{17}$ cm$\text{}^{-3}$. This increase was explained by a large surface depletion layer and an electric-field-induced optical rectification effect in the layer. Terahertz fields radiated by the samples of all three investigated Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te layers was of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences that linear current surge effect is dominating over nonlinear optical rectification. Azimuthal angle and magnetic fields emission witness that it is caused by linear photo-Dember type processes.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 132-136
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Terahertz Emission from the Surfaces of InAs and Other Narrow-Gap Semiconductors
Autorzy:: Adomavičius, R.
Krotkus, A.
Molis, G.
Urbanowicz, A.
Malevich, V.
Powiązania:: https://bibliotekanauki.pl/articles/1813200.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
07.57.Hm
78.47.-p
72.30.+q
Opis:: THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement of the optically induced THz pulse absorption transients provided important insights into electron energy relaxation in the conduction band. In the second set of experiments, THz generation from the surfaces of various semiconductors was studied and compared. It was found that the most efficient THz emitters are semiconductors with a narrow band gap, large intervalley separation in the conduction band, and low nonparabolicity of the main valley.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 859-862
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Terahertz Spectroscopy of Ordered $PbSc_{1//2}Nb_{1//2}O_3$ Ceramics
Autorzy:: Macutkevič, J.
Adomavičius, R.
Krotkus, A.
Valušis, G.
Grigalaitis, R.
Banys, J.
Bormanis, K.
Sternberg, A.
Powiązania:: https://bibliotekanauki.pl/articles/1813210.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 77.22.Gm
77.80.-e
77.80.Bh
Opis:: The ordered $PbSc_{1//2}Nb_{1//2}O_3$ ceramics were studied by THz transmission spectroscopy in the temperature range of 80-300 K. Below ferroelectric phase transition temperature the strength of central mode gradually decreases and gives evidence for a mixed displacive and order-disorder character of the transitions. Ferroelectric phase transition is connected with an abrupt freezing and rise of polar nanoregions into ferroelectric domains.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 883-886
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Transient Photoconductivity and Photoluminescence in InP:Cu
Autorzy:: Stalnionis, A.
Adomavic̆ius, R.
Krotkus, A.
Marcinkevic̆ius, S.
Leon, R.
Jagadish, C.
Powiązania:: https://bibliotekanauki.pl/articles/1952097.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.40.+w
78.47.+p
78.55.-m
Opis:: Nonequilibrium photoexcited carrier dynamics in InP:Cu was investigated by two experimental techniques: the time-resolved photoluminescence up-conversion and the transient photoconductivity measurement. Both measurements show that doping with copper significantly modifies the photoexcited carrier relaxation in indium phosphide. There are several strong indications that this effect originates from the carrier trapping at metallic precipitates.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 931-934
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As
Autorzy:: Šustavičiūtė, R.
Balakauskas, S.
Adomavičius, R.
Krotkus, A.
Sadowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/2047687.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
07.57.Hm
78.47.+p
75.50.Pp
Opis:: An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron lifetimes are the shortest for the samples with the smallest Mn content. For the samples with x=0.3% and x=2% this relaxation becomes much slower; its rate is comparable to the carrier recombination rate in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As substrate.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 311-314
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 7.

Tytuł:: THz Time Domain Spectroscopy of Thin Gold Layers on GaAs
Autorzy:: Szczytko, J.
Adomavicius, R.
Papis, E.
Barańska, A.
Wawro, A.
Krotkus, A.
Piętka, B.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1417930.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Bz
78.68.+m
Opis:: Thin layers of Au with the thickness of several nanometers were prepared on a semi-insulating GaAs substrate. The layers' thickness was determined by ellipsometry. THz time-domain spectroscopy was applied to determine a complex index of refraction of thin Au layers. The obtained results allow for a more precise modeling of the performance of semiconductor devices at THz frequencies.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1118-1120
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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