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Wyszukujesz frazę "Abd El-Wahabb, E." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Effect of Heat Treatment on the ac Conductivity and Dielectric Properties of Ag$\text{}_{33}$Sb$\text{}_{31}$Se$\text{}_{36}$ Thin Films
Autorzy:
Abd El-Wahabb, E.
Powiązania:
https://bibliotekanauki.pl/articles/2044570.pdf
Data publikacji:
2005-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.-r
77.55.+f
81.40.Rs
81.40.Tv
81.40.Ef
Opis:
The effect of heat treatment on the ac conductivity and dielectric properties of the melt quenched and thermally evaporated Ag$\text{}_{33}$Sb$\text{}_{31}$Se$\text{}_{36}$ chalcogenide system are reported for the first time. The results of the alternating current conductivity σ$\text{}_{ac}$, the dielectric constantε$\text{}_{1}$, and the dielectric lossε$\text{}_{2}$ of the Ag$\text{}_{33}$Sb$\text{}_{31}$Se$\text{}_{36}$ thin film samples are presented over the temperature range 303-373 K and the frequency range 0.1-100 kHz. The temperature dependence of the ac conductivity σ$\text{}_{ac}$(ω) and the frequency exponent s are discussed with the aim of the correlated barrier hopping model. Values of σ$\text{}_{ac}$(ω),ε$\text{}_{1}$, and ε$\text{}_{2}$ were found to increase with the increase in the annealing temperature due to the reduction of the number of unsaturated defects which decrease the density of localized states in the band structure.
Źródło:
Acta Physica Polonica A; 2005, 108, 6; 985-996
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Annealing on the AC Conductivity and the Dielectric Properties of In$\text{}_{2}$Te$\text{}_{3}$ Thin Films
Autorzy:
Afifi, M. A.
Abd El-Wahabb, E.
Bekheet, A. E.
Atyia, H. E.
Powiązania:
https://bibliotekanauki.pl/articles/2014347.pdf
Data publikacji:
2000-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.+f
72.20.-i
Opis:
In$\text{}_{2}$Te$\text{}_{3}$ thin films were prepared by thermal evaporation technique. The composition of the films is checked by energy dispersive X-ray analysis. X-ray analysis showed that the as-deposited In$\text{}_{2}$Te$\text{}_{3}$ films as well as films annealed at temperatures ≤473K have crystalline structure. The ac conductivity σ$\text{}_{ac}$(ω), the dielectric constant ε$\text{}_{1}$ and the dielectric loss ε$\text{}_{2}$ of In$\text{}_{2}$Te$\text{}_{3}$ films were studied in the temperature range 303-373K and in the frequency range 100Hz-100kHz. The ac conduction activation energy ΔE$\text{}_{σ}$(ω) was found to be 0.065eV for the as-deposited films. The ac conductivity was found to obey the relation σ$\text{}_{ac}$(ω)=Aω$\text{}^{s}$, where s is the frequency exponent. The obtained temperature dependence of s is reasonably interpreted by quantum mechanical tunneling model. Both the dielectric constant ε$\text{}_{1}$ and the dielectric loss ε$\text{}_{2}$ increased with temperature and decreased with frequency in the investigated range. The frequency and temperature dependencies of σ$\text{}_{ac}$(ω), ε$\text{}_{1}$, and ε$\text{}_{2}$ for the annealed samples have the same behavior as that for the as-deposited samples. However, values of σ$\text{}_{ac}$(ω), ε$\text{}_{1}$, and ε$\text{}_{2}$ measured at any frequency and temperature increased with annealing temperature up to 473K. It was found also that ΔE$\text{}_{σ}$(ω) decreased with annealing temperature.
Źródło:
Acta Physica Polonica A; 2000, 98, 4; 401-409
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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