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Wyszukujesz frazę "Ašmontas, S." wg kryterium: Autor

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    Wyświetlanie 1-24 z 24
    Tytuł:
    Monte Carlo Treatment of Non-Equilibrium Processes in n-Type InSb Crystals
    Autorzy:
    Ašmontas, S.
    Raguotis, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813219.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.65.Pp
    72.10.-d
    72.10.Fk
    72.20.Dp
    Opis:
    Numerical calculation by Monte Carlo method of the dynamic behaviour of electron ensemble in n-type InSb crystals after step-like application of electric field is presented. The results show essential influence of electron density on the energy relaxation time. The effect of electron energy cooling below equilibrium temperature in compensated n-InSb is obtained numerically for the first time, which is in agreement with experimental results.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 929-932
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hot-Electron Effects in High-Resistivity InSb
    Autorzy:
    Ašmontas, S.
    Subačius, L.
    Valušis, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929737.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    Opis:
    We report that in the presence of random potential of the conduction band hot-electron transport can exhibit some novel features, some of which can be observed in dependencies of electric conductivity, mean electron energy and noise temperature on electric field strength.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 717-720
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electric Field Distributions in the Open Cylindrical Silicon Carbide Waveguides
    Autorzy:
    Asmontas, S.
    Nickelson, L.
    Gric, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807970.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Lx
    75.47.Gk
    73.50.Fq
    Opis:
    Here are presented the results of an electrodynamical analysis of the SiC waveguides with two different radii R=1.5 mm and R=2.5 mm. We have investigated the dispersion characteristics of these waveguides as well as the electric field distributions in the waveguide cross-sections at f=50 and 25 GHz.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1160-1161
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A Method for Measuring the Specific Electrical Conductivity of an Anisotropically Conductive Medium
    Autorzy:
    Ašmontas, S.
    Kleiza, V.
    Kleiza, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812345.pdf
    Data publikacji:
    2008-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    06.20.Dk
    02.60.Cb
    Opis:
    The paper deals with the ways of finding an electrical conductivity tensor of a plane and anisotropically conductive sample. Application of the Van der Pauw method to investigate the conductivity of anisotropically conductive media makes the basis of research. Several models of distribution of the electric field potential are presented, their merits and demerits are discussed, and the necessary physical measurements are indicated. On the basis of these models, the respective calculation expressions of the specific conductivity tensor are derived and algorithms for their realization and error calculation are developed.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 6; 1559-1569
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Applicable Damage of High-$T_{c}$ YbaCuO Superconducting Tapes by Current and Laser Pulses
    Autorzy:
    Kiprijanovič, O.
    Ašmontas, S.
    Anisimovas, F.
    Gradauskas, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506252.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.25.F-
    74.25.fc
    74.25.Op
    85.25.Am
    Opis:
    Damage and irreversible damage of YBaCuO tapes with high density current after switching from superconducting to normal state are investigated. Quasi-homogeneous current distribution across the tape in superconducting state can cause perfect tape damage or irreversible damage when current is slightly above critical value. The model of the tape heating during the optically initiated switching from superconducting to normal state is proposed. Analysis of causes inducing damage shows necessity to consider $0.5T_{m}$ damage criterion because of strong current influence on the damage processes. Possible damage mechanisms are described and crack tips motion simultaneously with switching from superconducting to normal state is considered. Application of optically illuminated YBaCuO tapes with nanosecond duration current pulses on the base of the described mechanisms is proposed.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 256-258
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fast Detection of Infrared Laser Pulses on Planar Small Area GaAs/AlGaAs Heterojunction
    Autorzy:
    Širmulis, E.
    Kazlauskaitė, V.
    Gradauskas, J.
    Sužiedėlis, A.
    Ašmontas, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813198.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.40.+w
    73.40.Kp
    Opis:
    We report the first experimental observation of fast photovoltage in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond $CO_2$ laser pulses. This device revealed itself as a sensitive detector of millimeter waves and as a fast IR sensor operating at room temperature. Taking into account fast response of the detector and close to linear voltage-power dependence, the results are interpreted by photoemission of hot carriers over the potential barrier of the heterojunction.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 851-854
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Submicrometric Heavily Doped n-GaAs Structures for Microwave Detection
    Autorzy:
    Ašmontas, S.
    Gradauskas, J.
    Kozič, A.
    Shtrikmann, H.
    Sužiedėlis, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041657.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.40.-x
    07.57.Kp
    Opis:
    Strong coupling between electrons and phonons in heavily doped semiconductors impedes, in general, investigation of hot carrier phenomena in the material. Investigations of hot electron electromotive force arising in symmetrically and asymmetrically shaped structures of heavily doped n-GaAs under microwave radiation are presented in this paper. Mesas of MBE grown n-GaAs layers with neck shaped down to submicron dimensions revealed strong dependence of voltage sensitivity of the structure on the size of the neck. Slight frequency dependence of voltage sensitivity of the microwave diodes with both symmetrically and asymmetrically shaped n-n$\text{}^{+}$ junctions was observed experimentally in K$\text{}_{a}$ frequency range, which coincides well with theoretical predictions.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 147-150
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Peculiarities of High Power Infrared Detection on Narrow-Gap Semiconductor p-n Junctions
    Autorzy:
    Gradauskas, J.
    Širmulis, E.
    Ašmontas, S.
    Sužiedėlis, A.
    Dashevsky, Z.
    Kasiyan, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506219.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.56.-a
    78.70.-g
    84.60.Jt
    85.60.Dw
    Opis:
    We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed $CO_2$ laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 237-240
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetoresistive Properties of Manganite-Based Heterojunctions
    Autorzy:
    Devenson, J.
    Vengalis, B.
    Lisauskas, V.
    Oginskis, A.
    Anisimovas, F.
    Ašmontas, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807945.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.-i
    71.30.+h
    73.50.-h
    Opis:
    Hole-doped $La_{2/3}Ba_{1/3}MnO_{3}$ (LBaMO), $La_{2/3}Ca_{1/3}MnO_{3}$ (LCaMO) and $La_{2/3}Ce_{1/3}MnO_{3}$ (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb-doped $SrTiO_{3}(100)$ (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > U_d where U_d is the interfacial potential, corresponding to a steep current increase at a forward bias.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1130-1132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Studies of Response of Metal - Porous Silicon Structures to Microwave Radiation
    Autorzy:
    Stupakova, J.
    Ašmontas, S.
    Gradauskas, J.
    Zagadskij, V.
    Shatkovskis, E.
    Sužiedėlis, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047172.pdf
    Data publikacji:
    2006-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.30.+q
    78.55.Mb
    85.30.De
    Opis:
    Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 6; 817-822
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hot Electron Effect in Degenerate Semiconductor Tunnel Junction
    Autorzy:
    Ašmontas, S.
    Gradauskas, J.
    Petkun, V.
    Seliuta, D.
    Sužiedėlis, A.
    Urbelis, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041722.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    73.40.Gk
    07.57.Kp
    Opis:
    We report on the results of experimental study of free carrier heating in degenerate GaAs tunnel p-n diodes when the carriers are excited by pulsed microwave radiation. Free carrier heating is responsible for the electromotive force in the diode. The magnitude of the electromotive force linearly depends on pulsed microwave power and increases with the decrease in semiconductor lattice temperature. It is almost independent of the pulsed microwave frequency and of p-n junction plane orientation in respect to electric field direction. In the tunnelling regime the dark current in the diode is reduced, however, at high enough forward bias the diffusive current is stimulated due to hot carrier phenomenon.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 198-202
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures
    Autorzy:
    Nargelienė, V.
    Ašmontas, S.
    Čerškus, A.
    Gradauskas, J.
    Kundrotas, J.
    Sužiedėlis, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505529.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    71.35.-y
    68.65.-k
    Opis:
    We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 177-179
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection
    Autorzy:
    Kozič, A.
    Paškevič, Č.
    Sužiedėlis, A.
    Gradauskas, J.
    Ašmontas, S.
    Szerling, A.
    Wrzesińska, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047175.pdf
    Data publikacji:
    2006-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.De
    72.30.+q
    Opis:
    In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitrogen temperature is 38 V/W for 10 GHz radiations and is higher compared to that of modulation doped AlGaAs/GaAs of the same configuration.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 6; 845-849
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Reversible Resistive Switching in Electrically Nonhomogeneous $La_{0.67}Ca_{0.33}MnO_3$ Thin Films by Short Electrical Pulses
    Autorzy:
    Lučun, A.
    Kiprijanovič, O.
    Ašmontas, S.
    Anisimovas, F.
    Maneikis, A.
    Sužied.lis, A.
    Vengalis, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813407.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Gk
    75.47.Lx
    07.57.Kp
    Opis:
    Resistance changes in thin electrically nonhomogeneous $La_{0.67}Ca_{0.33}MnO_3$ films were investigated using electrical pulses of nanosecond duration in the 80-300 K temperature range. Two types of reversible switching to higher resistive states with different starting temperature induced by series of the positive pulses were observed. Possible mechanisms of the resistance switching by short electrical pulses in the vicinity of $T_m$ and at 80-90 K are discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 1059-1062
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells
    Autorzy:
    Kundrotas, J.
    Čerškus, A.
    Ašmontas, S.
    Valušis, G.
    Sherliker, B.
    Halsall, M.
    Harrison, P.
    Steer, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1178273.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    78.55.-m
    Opis:
    We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 245-249
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Phase Separation and Microwave Response of Epitaxial and Polycrystalline Manganite Films
    Autorzy:
    Ašmontas, S.
    Abrutis, A.
    Gradauskas, J.
    Lučun, A.
    Oginskis, A.
    Plaušinaitienė, V.
    Sužiedėlis, A.
    Vengalis, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2037115.pdf
    Data publikacji:
    2004
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Gk
    75.47.Lx
    07.57.Kp
    Opis:
    The resistance, magnetoresistance, and resistance response under microwave irradiation (f=10 and 35 GHz) were measured for epitaxial and polycrystalline La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$ and La$\text{}_{0.67}$Sr$\text{}_{0.33}$MnO$\text{}_{3}$ thin films in the temperature range 78÷300 K. The microwave induced resistance increase observed for the epitaxial films in a narrow temperature range below the ferromagnetic to paramagnetic transition temperature T$\text{}_{c}$ certifies coexistence of low resistance (ferromagnetic) and high resistance (paramagnetic) regions in the manganites. Resistance of polycrystalline films decreased under microwave irradiation in a wide temperature range below T$\text{}_{c}$. The effect was explained in terms of microwave assisted hopping of carriers in high resistance regions formed at grain boundaries of the polycrystalline films.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 1-2; 141-147
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Power Microwave Detection in Asymmetrically Shaped n-Al$\text{}_{x}$Ga$\text{}_{1-x}$As Structures
    Autorzy:
    Ašmontas, S.
    Čerškus, A.
    Gradauskas, J.
    Kundrotas, J.
    Lučun, A.
    Petkun, V.
    Sužiedėlis, A.
    Šilėnas, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041762.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.57.Kp
    84.40.-x
    72.20.Ht
    Opis:
    Investigations of detection of high power microwaves in planar asymmetrically shaped microwave diodes on the basis of Al$\text{}_{x}$Ga$\text{}_{1-x}$As ternary semiconductors with various AlAs mole fraction are presented. The principle of operation of the microwave diodes is based on carrier heating phenomena in asymmetrically shaped homogeneous semiconductor structure due to different distribution of the electric field strength along the sample. Experimental results of microwave detection on the barrier-less asymmetrically shaped diodes are presented paying special attention to the homogeneity of Al$\text{}_{x}$Ga$\text{}_{1-x}$As which was monitored by photoluminescence technique.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 315-318
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Enhancement of the Excitonic Photoluminescence in $n^{+}$/i-GaAs by Controlling the Thickness and Impurity Concentration of the $n^{+}$ Layer
    Autorzy:
    Čerškus, A.
    Nargelienė, V.
    Kundrotas, J.
    Sužiedėlis, A.
    Ašmontas, S.
    Gradauskas, J.
    Johannessen, A.
    Johannessen, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505489.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    71.35.-y
    71.55.Eq
    Opis:
    This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, $N_{Si} = 10^{17} cm^{-3}$ and $N_{Si} = 10^{18} cm^{-3}$, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the $n^{+}$/i-GaAs homojunction are discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 154-157
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electroresistance of Electrically Nonhomogeneous La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$/MgO Thin Films
    Autorzy:
    Kiprijanovič, O.
    Lučun, A.
    Ašmontas, S.
    Anisimovas, F.
    Butkutė, R.
    Maneikis, A.
    Sužiedėlis, A.
    Vengalis, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047239.pdf
    Data publikacji:
    2007-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Gr
    73.50.Lw
    73.63.Bd
    Opis:
    Current and electrical field-induced electroresistive effects were investigated for La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$/MgO thin films demonstrating nanosized electrical inhomogeneities. Two different models based on enhanced conductivity of intergrain boundaries by injecting spin-polarized carriers from ferromagnetic grains and electrical field-enhanced hopping of carriers in high resistance intergrain media were carried out to explain nonlinear electrical properties of the films.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 1; 141-146
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mesoscopic Structures for Microwave-THz Detection
    Autorzy:
    Sužied.elis, A.
    Ašmontas, S.
    Požela, J.
    Kundrotas, J.
    Širmulis, E.
    Gradauskas, J.
    Kozič, A.
    Kazlauskaité, V.
    Anbinderis, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813189.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Fg
    73.40.Kp
    73.50.Lw
    73.63.Kv
    Opis:
    Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 803-809
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetoresistance of Polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$MnO$\text{}_{3}$ Films in a Microwave Magnetic Field
    Autorzy:
    Lučun, A.
    Butkutė, R.
    Maneikis, A.
    Kiprijanovič, O.
    Anisimovas, F.
    Gradauskas, J.
    Sužiedėlis, A.
    Vengalis, B.
    Kancleris, Ž.
    Ašmontas, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047240.pdf
    Data publikacji:
    2007-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Gk
    75.47.Lx
    07.57.Kp
    Opis:
    We present new experimental evidence indicating the importance of magnetic field component of microwave field (f=9.4 GHz) for magnetoresistive properties of polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$MnO$\text{}_{3}$ films. The microwave measurements revealed a different character of the temperature-dependent electrical resistance of polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$MnO$\text{}_{3}$ films placed in the centre (maximal amplitude of H$\text{}_{10}$ wave vector) and at a narrow wall of the wave-guide (reduced H$\text{}_{10}$ amplitude). Theoretical estimations of the influence of substrate onto distribution of microwave electric and magnetic fields in the waveguide were performed using the finite-difference time-domain method.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 1; 147-152
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Frequency Dependence of Electrical Response of Polycrystalline LCMO Thin Films
    Autorzy:
    Ašmontas, S.
    Anisimovas, F.
    Balevičius, S.
    Cimmperman, P.
    Gradauskas, J.
    Lučun, A.
    Stankevič, V.
    Sužiedėlis, A.
    Vengalis, B.
    Žurauskienė, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041721.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Gk
    75.47.Lx
    07.57.Kp
    Opis:
    Influence of strong electric field in wide frequency range (from DC to 35 GHz) on electrical resistance of thin La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$ polycrystalline manganite films was investigated in the range of (78÷300) K. Different behavior of resistance change vs. temperature was observed when pulsed DC electric field and microwaves were applied to the films. When pulsed DC electric field is applied the electric-field-induced resistance change ("electroresistance") of manganite film depended nearly monotonically on temperature. However, in microwave electric fields a non-monotonic character of the electroresistance temperature dependence was observed. The dependence of the electroresistance on quality of manganite films was observed in case of microwaves. The experimental findings are explained assuming different electrical current mechanisms in case of DC and microwave fields. The applied voltage drops mainly across the grains of polycrystalline film due to a presence of displacement currents in case of microwaves, whereas in DC case the voltage drop is across the grain boundaries.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 193-197
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Magnetic Field on Detection Properties of Planar Microwave Diodes
    Autorzy:
    Sužiedėlis, A.
    Ašmontas, S.
    Požela, J.
    Gradauskas, J.
    Nargelienė, V.
    Paškevič, Č.
    Derkach, V.
    Golovashchenko, R.
    Goroshko, E.
    Korzh, V.
    Anbinderis, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506099.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.57.Kp
    78.70.Gq
    75.47.Pq
    73.40.Kp
    73.40.-c
    75.70.-i
    Opis:
    The results of experimental investigation of detection properties of the planar microwave diodes of various configuration on DC magnetic field are presented in this paper. The detection of microwave radiation was measured at 51 GHz, 72 GHz and 144 GHz frequencies. The magnetic field was applied in plane and perpendicularly to the plane of the diodes. The experiment was performed at room temperature. Dependence of the detected voltage of the diodes on the magnetic field had asymmetric character with respect to the polarity of the magnetic field. This fact allowed us to suspect the magnetic rectification influencing the detected voltage. Therefore, average value of the detected voltage with respect to the polarity of the applied magnetic field gives its dependence on the applied magnetic field.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 218-221
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes
    Autorzy:
    Valušis, G.
    Seliuta, D.
    Tamošiūnas, V.
    Širmulis, E.
    Balakauskas, S.
    Gradauskas, J.
    Sužiedėlis, A.
    Ašmontas, S.
    Anbinderis, T.
    Narkūnas, A.
    Papsujeva, I.
    Lisauskas, A.
    Roskos, H. G.
    Köhler, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041684.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.-h
    85.30.De
    72.30.+q
    Opis:
    We suggest a novel approach to detect broad band, 0.078-2.52 THz, electromagnetic radiation at room temperature using an asymmetrically-shaped bow-tie diode based on a modulation-doped GaAs/AlGaAs structure. We show that the voltage sensitivity in the range from 0.078 THz up to 0.8 THz has a plateau and its value is within 0.3-0.5 V/W. We consider the bow-tie diode design to increase the sensitivity of the device.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 184-187
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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