Autor: Żukowski, O. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Application of HPLC-MS with Electrospray Ionization for the Qualitative and Quantitative Analysis of Antibiotics in Pharmaceutical Formulation
Autorzy:: Likhtarovich, A.
Luhin, V.
Sovastei, O.
Zukowski, P.
Dado, M.
Powiązania:: https://bibliotekanauki.pl/articles/1402227.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 32.10.Bi
33.15.Ta
82.80.-d
Opis:: This study describes the application of electrospray ionization mass spectrometry in order to identify ten antibiotics (macrolides, penicillins, aminoglycosides). An optimum procedure was developed for determination of antibiotics of different grade. Positive ion spectra of most antibiotics are higher in intensity including an [M+H]⁺ ion and produce less fragmentation and are more informative compared to the negative ion spectra. The group of antibiotics exhibits the same characteristic fragmentation. The data base was developed for identification of antibiotics comparing of their molecular and fragment ions. The results of the study showed that the method with electrospray ionization is simple and quick which is useful in the routine determination of antibiotics and in their pharmaceutical dosage forms.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 901-904
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Fabrication and Research of Superhard (Zr-Ti-Cr-Nb)N Coatings
Autorzy:: Bondar, O.
Postolnyi, B.
Kravchenko, Yu.
Shypylenko, A.
Sobol, O.
Beresnev, V.
Kuzmenko, A.
Zukowski, P.
Powiązania:: https://bibliotekanauki.pl/articles/1402215.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.46.-w
62.20.Qp
Opis:: This work presents the results of (Zr-Ti-Cr-Nb)N superhard coatings research. The samples were fabricated by the vacuum-arc deposition method (Arc-PVD). Structure, composition and properties of these coatings were studied. The study of coatings was carried out using scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction. Hardness measurements and adhesion tests were performed. The coatings thickness was up to 6.2 μ m, nanocrystallites sizes ranged from 4 to 7.3 nm. Values of hardness and cohesive strength were H=43.7 GPa and $L_{C}$=62.06 N, respectively. The optimal conditions for coating deposition were found.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 867-870
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Investigation of Nanoscale TiN/MoN Multilayered Systems, Fabricated Using Arc Evaporation
Autorzy:: Pogrebnjak, A.
Bondar, O.
Abadias, G.
Eyidi, D.
Beresnev, V.
Sobol, O.
Postolnyi, B.
Zukowski, P.
Powiązania:: https://bibliotekanauki.pl/articles/1402193.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.46.-w
62.20.Qp
62.25.-g
Opis:: Using the vacuum-arc evaporation method we fabricated periodic multilayered TiN/MoN structures with different bilayer periods λ ranging from 8 to 100 nm. We found that molybdenum nitride and titanium nitride layers grown on steel show local partial epitaxy and columnar growth across interfaces. A molybdenum-titanium carbide interlayer was evidenced between the substrate and the multilayer. Molybdenum nitride and titanium nitride layers contain small (5÷30 nm) grains and are well crystallized with (100) preferred orientation. They were identified as stoichiometric fcc TiN and cubic γ-M₂N. Non-cubic molybdenum nitride phases were also detected. The hardness of the obtained structures achieved great values and maximal hardness was 31÷41.8 GPa for the multilayered structure with a 8 nm period. Hardness of the obtained coatings is 25÷45% higher in comparison with the initial single-layer nitride coatings, plasticity index of multilayered structure is 0.075.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 836-840
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Presence of Inductivity in $(CoFeZr)_x(PZT)_{1-x}$ Nanocomposite Produced by Ion Beam Sputtering
Autorzy:: Kołtunowicz, T.
Żukowski, P.
Boiko, O.
Fedotov, A.
Larkin, A.
Powiązania:: https://bibliotekanauki.pl/articles/1402211.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.23.Pq
79.20.Rf
81.40.Ef
72.80.Le
Opis:: This paper presents the investigations of the electrical properties of the $(CoFeZr)_{x}(PZT)_{1-x}$ nanocomposite with the metallic phase content x=43.8 at.%, which was produced by ion beam sputtering. Such preparation took place under an argon atmosphere with low oxygen content with its partial pressure $P_{O_2} = 2 \times 10^{-3} Pa$. The measurements were performed using alternating current within the frequency range of 50 Hz-10⁵ Hz for measuring temperatures ranging from 238 K to 328 K. The $(CoFeZr)_{43.8}(PZT)_{56.2}$ nanocomposite sample subjected to a 15 min annealing process in air at the temperature Tₐ=423 K demonstrates a phase angle of -90° ≤ θ ≤ 0° in the frequency range 50 Hz-10⁵ Hz. It corresponds to the capacitive type of conduction. In the frequency range 10⁴-10⁵ Hz sharp minima in selected conductivity vs. frequency characteristics occur, which corresponds to a current resonance phenomenon in RLC circuits. In case of a sample annealed at Tₐ=498 K the inductive type of conduction with 0° ≤ θ ≤ +90° occurs in a high frequency area. At the frequency $f_{r}$ characterized by the phase angle θ = 0°, the capacity value reaches its local minimum. It indicates a voltage resonance phenomenon in conventional RLC circuits. The θ = +90° crossing in the frequency dependence of phase angle corresponds to the current resonance phenomenon, which is represented by a strong local minimum in the conductivity vs. frequency characteristics.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 853-856
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions
Autorzy:: Komarov, F.
Vlasukova, L.
Milchanin, O.
Greben, M.
Parkhomenko, I.
Mudryi, A.
Wendler, E.
Zukowski, P.
Powiązania:: https://bibliotekanauki.pl/articles/1198877.pdf
Data publikacji:: 2014-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:: Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
Źródło:: Acta Physica Polonica A; 2014, 125, 6; 1288-1291
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Surface Properties of Me/Si Structures Prepared by Means of Self-Ion Assisted Deposition
Autorzy:: Tashlykov, I.
Żukowski, P.
Mikhalkovich, O.
Baraishuk, S.
Powiązania:: https://bibliotekanauki.pl/articles/1198974.pdf
Data publikacji:: 2014-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uf
82.80.-d
62.20.Qp
Opis:: In this paper a composite structure, topography, wettability and nanohardness of a (100) Si surface modified by means of ion-assisted deposition of metal (Me) coatings in conditions of a self-irradiation are discussed.
Źródło:: Acta Physica Polonica A; 2014, 125, 6; 1306-1308
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Influence of Annealing on the Electrical Properties οf Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment
Autorzy:: Fedotov, A.
Korolik, O.
Mazanik, A.
Kołtunowicz, T.
Żukowski, P.
Powiązania:: https://bibliotekanauki.pl/articles/1503985.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uf
81.40.Ef
Opis:: The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 108-110
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki