Wszystkie pola: wavelength conversion - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Controllable wavelength conversion based on soliton dynamics in mid-infrared fiber
Autorzy:: Shen, Kangle
Yang, Jian
Zhao, Jiayi
Yang, Xinyu
Yang, Hua
Powiązania:: https://bibliotekanauki.pl/articles/27310109.pdf
Data publikacji:: 2023
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: soliton dynamics
photonic crystal fiber
all-optical conversion switches
Opis:: We provide a convenient way to actively control the wavelength conversion of probe waves based on the soliton dynamics in the As2S3 fibers. In this paper, it is found by numerical calculation that wavelength conversion occurs in the frequency domain due to the existence of refractive index barrier. By adjusting the collision position of pump pulse and probe pulse to realize the conversion of probe pulse wavelength, the effect of the power and the incident wavelength of the probe wave on the wavelength conversion are also discussed. This frequency domain conversion is of great use in the mid-infrared region, for example, all-optical conversion switches.
Źródło:: Optica Applicata; 2023, 53, 3; 419--429
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion
Autorzy:: Qin, C
Shen, W
Zhao, J.
Yu, H.
Xu, E
Powiązania:: https://bibliotekanauki.pl/articles/173469.pdf
Data publikacji:: 2015
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: semiconductor optical amplifiers
polarization
patterning effect
Opis:: In this paper, polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion is experimentally and theoretically investigated. The carrier and photon density rate equations are numerically solved by using the time-domain traveling wave model. The material gain calculation, including the strain effect in the active layer, is based on the k·p method. By comparing experimental and computational results, it is demonstrated that the polarization of the injection signal has a significant influence on the gain recovery time of quantum well semiconductor optical amplifier. Under the cross-polarized signals injection, the output signals suffer the weakest and strongest patterning effects both for unstrained and tensile strained quantum well semiconductor optical amplifiers.
Źródło:: Optica Applicata; 2015, 45, 2; 163-172
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Wavelength-adjustable all-optical wavelength conversion using a tunable fiber laser and an electroabsorption modulator
Autorzy:: Tseng, C.-L.
Lin, Y.-W.
Ching, P.-J.
Cheng, Y.-T.
Jou, J.-J.
Liu, C.-K.
Powiązania:: https://bibliotekanauki.pl/articles/174311.pdf
Data publikacji:: 2016
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: wavelength conversion
fiber ring laser
erbium-doped fiber
electroabsorption modulator
wavelength division multiplexing (WDM) network
Opis:: A wavelength conversion scheme is presented experimentally using a wavelength tunable erbium-doped fiber laser as a probe light source and an electroabsorption modulator with a DC bias only.For the input wavelength of 1557nm with a 10-Gb/s non-return to zero signal, the Q value is 10.6and the power penalty is less than 1.5dB at a bit error rate of 10^–9 at the probe wavelength of1560nm. Given a fixed Q value of 6, probe wavelengths cover a range of 25nm. Furthermore,the relationship between the range of probe wavelength and the amount of power penalty is alsoinvestigated.
Źródło:: Optica Applicata; 2016, 46, 3; 347-352
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: New method of numerical modelling of optical field transformation by inhomogeneous semiconductor layer with time-varying parameters
Autorzy:: Vorgul, I.Yu.
Marciniak, M.
Powiązania:: https://bibliotekanauki.pl/articles/308793.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: optical field transformation
wavelength conversion
nonlinear phenomena in semiconductor
Opis:: A time-domain model of a semiconductor layer with time-dependent inhomogeneous permittivity or conductivity is investigated by solving direct and inverse problems using a novel method, revealing a possibility of wavelength shifting and other desirable optical field transformation, as well as a remote diagnostics of fast time-varying inhomogeneous structures.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 1-2; 83-84
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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