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    Wyświetlanie 1-2 z 2
    Tytuł:
    Effect of type, color and location of sticky pheromone traps on male moth catches of Cameraria ohridella
    Autorzy:
    Sukovata, L.
    Slusarski, S.
    Jablonski, T.
    Kolk, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/55115.pdf
    Data publikacji:
    2009
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Przemysłu Organicznego
    Tematy:
    horse chestnut
    Lepidoptera
    location
    trap type
    horse chestnut leafminer
    moth
    invasive pest
    pheromone trap
    Cameraria ohridella
    new pest
    pest
    male
    colour
    Gracillariidae
    Hippocastanaceae
    Aesculus hippocastanum
    Opis:
    The horse chestnut leaf miner, Cameraria ohridella Deschka & Dimic (Lepidoptera: Gracillariidae), is a new invasive pest that has spread all over the Europe over the last 25 years. This paper presents research aimed to: 1) compare the effectiveness of sticky pheromone traps of various types (sizes and colors), 2) determine the effect of a trap location on moth catches. Studies were conducted in Warsaw and Falenty near Warsaw. No trap color preference by male moths was found in tests of white, blue and green barrier traps. Barrier traps had the largest sticky area (32 dm2) in comparison to PL-2 (5.625 dm2) and delta PL-1 (3.4 dm2) traps, thus they caught the highest total number of males, however PL-2 traps were the most effective (268-381 moths/dm2). The results of the studies suggest that to make traps with the C. ohridella pheromone be more effective they should: a) be located on a stem below a tree crown or in its lower part for the first C. ohridella generation, and in crowns for the second and later insect generations, b) be placed in some distance from a tree stem, if located in crowns.
    Źródło:
    Pestycydy; 2009, 1-4; 79-88
    0208-8703
    Pojawia się w:
    Pestycydy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of $SiO_2$/n-Type 4H-SiC Interface
    Autorzy:
    Król, K.
    Sochacki, M.
    Szmidt, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1363825.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    68.55.ag
    72.20.-i
    72.25.-b
    Opis:
    Silicon carbide (SiC) is the only wide-bandgap semiconductor capable of forming native dielectric layer of $SiO_2$ by thermal oxidation. This unique property of SiC combined with its high thermal conductivity and high critical field makes this semiconductor material suitable for high power electronic devices. Unfortunately, the state-of-the art technology does not use the full benefits of the material, especially in the case of MOSFET transistors. This is caused by insufficient electrical parameters of $SiO_2$/SiC interface. Two-component structure of the material and its high density result in high level of interface traps reducing the surface mobility and thus increasing series resistance of the device. One of the proposed methods of reducing the trap density in SiC MOS structure is a shallow nitrogen implantation prior to oxidation. This technique is based on the observation that introducing nitrogen into the $SiO_2$/SiC system results in significant reduction of trap states density and increase of the channel effective mobility. The shallow implantation technique has been reported to be as much effective as nitric oxide annealing which is one of the most effective techniques for oxide quality improvement in case of SiC. Unlike the diffusion based techniques, like postoxidation annealing, implantation of the nitrogen prior oxidation has the possibility of nitrogen concentration control near the oxide interface during oxidation process itself. This property is important since it was shown that the improvement degree is directly proportional to amount of nitrogen built in the vicinity of $SiO_2$/SiC interface during oxidation. However, previous investigations about this technique were inconclusive about the influence of implantation parameters and process conditions on observed effects. Both improvement and deterioration of interface quality was observed by different researchers. This behavior was never explained clearly. The primary objective of this research is to analyze the impact of implantation conditions on electrical properties of $SiO_2$/SiC MOS structure. This analysis is used to evaluate a hypothetical description of physical phenomena during oxidation of shallowly implanted substrates.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1033-1037
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-2 z 2

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