- Tytuł:
- Spectroscopy of Be Acceptor Ground State in GaAs/AlGaAs Heterostructure
- Autorzy:
-
Łusakowski, J.
Buczko, R.
Sakowicz, M.
Friedland, K. J.
Hey, R.
Ploog, K. - Powiązania:
- https://bibliotekanauki.pl/articles/2047378.pdf
- Data publikacji:
- 2007-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.70.Ej
78.67.De - Opis:
- Photoluminescence measurements were carried out on Be δ-doped GaAs/Al$\text{}_{0.33}$Ga$\text{}_{0.67}$As heterostructure at 1.6 K in magnetic fields (B) up to 4 T. Luminescence originating from recombination of a two-dimensional electron gas and photoexcited holes localized on Be acceptors was analyzed. The degree of circular polarization (γ$\text{}_{C}$) of the luminescence from fully occupied Landau levels was determined as a function of B and the two-dimensional electron gas concentration, n$\text{}_{s}$. At B constant,γ$\text{}_{C}$ decreased with the increase in n$\text{}_{s}$. The intensity of the optical transition considered was calculated with taking into account s- and d-like parts of the acceptor envelope function. It is shown that the presence of the d-like part explains the observed γ$\text{}_{C}$(n$\text{}_{s}$) dependence quantitatively. This shows that polarization spectroscopy on acceptorδ-doped heterostructures enables one to test experimentally the contribution of the L>0 component of the envelope in a shallow acceptor description.
- Źródło:
-
Acta Physica Polonica A; 2007, 112, 2; 209-213
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki