Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "photodetector characteristics" wg kryterium: Wszystkie pola


Wyświetlanie 1-2 z 2
Tytuł:
Review of photodetectors characterization methods
Autorzy:
Bielecki, Zbigniew
Achtenberg, Krzysztof
Kopytko, Małgorzata
Mikołajczyk, Janusz
Wojtas, Jacek
Rogalski, Antoni
Powiązania:
https://bibliotekanauki.pl/articles/2173660.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
photodetectors
detector parameters
photodetector characteristics
measurements of detector parameters
fotodetektor
parametry detektora
charakterystyka fotodetektora
pomiary parametrów detektora
Opis:
The review includes results of analyses and research aimed at standardizing the concepts and measurement procedures associated with photodetector parameters. Photodetectors are key components that ensure the conversion of incoming optical radiation into an electrical signal in a wide variety of sophisticated optoelectronic systems and everyday devices, such as smartwatches and systems that measure the composition of the Martian atmosphere. Semiconductor detectors are presented, and they play a major role due to their excellent optical and electrical parameters as well as physical parameters, stability, and long mean time to failure. As their performance depends on the manufacturing technology and internal architecture, different types of photodetectors are described first. The following parts of the article concern metrological aspects related to their characterization. All the basic parameters have been defined, which are useful both for their users and their developers. This allows for the verification of photodetectors’ workmanship quality, the capabilities of a given technology, and, above all, suitability for a specific application and the performance of the final optoelectronic system. Experimentally validated meteorological models and equivalent diagrams, which are necessary for the correct analysis of parameter measurements, are also presented. The current state of knowledge presented in recognized scientific papers and the results of the authors’ works are described as well.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2022, 70, 2; art. no. e140534
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline $Cu_2S$ Based Heterojunctions for Photodetector Application
Autorzy:
Soliman, H.
Farag, A.
Saadeldin, M.
Sawaby, K.
Powiązania:
https://bibliotekanauki.pl/articles/1400523.pdf
Data publikacji:
2015-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
In this work, heterojunctions of $Cu_2S//p-Si$ were prepared by high vacuum thermal evaporation technique and examined as a photodetector structure. The dark current-voltage (I-V) characteristics of the heterojunctions measured at different temperatures ranging from 303 to 373 K were investigated. The predominant conduction mechanisms, series resistance, ideality factor and potential barrier height were determined. The downward curvature at sufficiently large voltages in the I-V characteristics is caused by the effect of series resistance $R_{s}$. The ideality factor obtained from I-V characteristics is larger than unity which can be attributed to the presence of a thin interfacial insulator layer between the metal and semiconductor. The photocurrent properties of the device under reverse bias using various illuminations were also explored for checking the validity of photodetector application of the studied device. The responsivity of light for the device under reverse bias confirms that the $Cu_2S//p-Si$ heterojunctions are valid for photodetector application. Moreover, these results suggest that the fabricated diode can be used for optical sensor applications. The capacitance-voltage characteristics of diode were also investigated at high frequency of 1 MHz.
Źródło:
Acta Physica Polonica A; 2015, 127, 6; 1688-1693
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies