Wszystkie pola: oxynitride - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Ultrathin oxynitride films for CMOS technology
Autorzy:: Beck, R.B.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308025.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOS technology
gate stack
ultrathin oxynitride layers
high temperature processing
plasma processing
Opis:: In this work, a review of possible methods of oxynitride film formation will be given. These are different combinations of methods applying high-temperature oxidation and nitridation, as well as ion implantation and deposition techniques. The layers obtained using these methods differ, among other aspects in: nitrogen content, its profile across the ultrathin layer,... etc., which have considerable impact on device properties, such as leakage current, channel mobility, device stability and its reliability. Unlike high-temperature processes, which (understood as a single process step) usually do not allow the control of the nitrogen content at the silicon-oxynitride layer interface, different types of deposition techniques allow certain freedom in this respect. However, deposition techniques have been believed for many years not to be suitable for such a responsible task as the formation of gate dielectrics in MOS devices. Nowadays, this belief seems unjustified. On the contrary, these methods often allow the formation of the layers not only with a uniquely high content of nitrogen but also a very unusual nitrogen profile, both at exceptionally low temperatures. This advantage is invaluable in the times of tight restrictions imposed on the thermal budget (especially for high performance devices). Certain specific features of these methods also allow unique solutions in certain technologies (leading to simplifications of the manufacturing process and/or higher performance and reliability), such as dual gate technology for system-on-chip (SOC) manufacturing.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 62-69
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: The influence of annealing (900?C) of ultra-thin PECVD silicon oxynitride layers
Autorzy:: Mroczyński, R.
Głuszko, G.
Beck, R. B.
Jakubowski, A.
Ćwil, M.
Konarski, P.
Hoffman, P.
Schmeißer, D.
Powiązania:: https://bibliotekanauki.pl/articles/308691.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: ultra-thin dielectrics
silicon oxynitride
PECVD
CMOS
Opis:: This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characterization methods (C-V, I-V and charge- pumping). The XPS measurements show that SiOxNy is the dominant phase in the ultra-thin layer and high-temperature annealing results in further increase of the oxynitride phase up to 70% of the whole layer. Despite comparable thickness, SIMS measurement indicates a densification of the annealed layer, because sputtering time is increased. It suggests complex changes of physical and chemical properties of the investigated layers taking place during high-temperature annealing. The C-V curves of annealed layers exhibit less frequency dispersion, their leakage and charge-pumping currents are lower when compared to those of as-deposited layers, proving improvement in the gate structure trapping properties due to the annealing process.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 16-19
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Comparison of composition of ultra-thin silicon oxynitride layers fabricated by PECVD and ultrashallow rf plasma ion implantation
Autorzy:: Mroczyński, R.
Bieniek, T.
Beck, R. B.
Ćwil, M.
Konarski, P.
Hoffman, P.
Schmeißer, D.
Powiązania:: https://bibliotekanauki.pl/articles/308687.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: ultra-thin dielectrics
oxynitride
SIMS
XPS
PECVD
Opis:: In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation and plasma enhanced chemical vapour deposition (PECVD). Chemical composition of silicon oxynitride layers was investigated by means of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The spectroscopic ellipsometry was used to determine both the thickness and refractive index of the obtained layers. The XPS measurements show considerable differences between the composition of the fabricated layers using each of the above mentioned methods. The SIMS analysis confirms XPS results and indicates differences in nitrogen distribution.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 20-24
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Ellipsometric Evaluation of the Optical Constants of Zirconium Oxynitride Thin Films Deposited by Reactive Pulsed Magnetron Sputtering
Autorzy:: Tomsah, I.
Powiązania:: https://bibliotekanauki.pl/articles/1400496.pdf
Data publikacji:: 2013-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.15.Gh
61.05.C-
78.66.-w
Opis:: Three different zirconium oxynitride films were deposited onto glass and Si (100) substrates at room temperature by pulsed reactive dc magnetron sputtering of a metallic Zr target in an $Ar//O_2//N_2$ atmosphere. The structural, compositional and optical properties of the deposited films were found to depend on the ratio of nitrogen partial pressure to the total reactive gas partial pressure. Energy-dispersive X-ray spectroscopy measurements revealed that as the nitrogen amount increased in the reactive gas the nitrogen content was found to increase in the film. The film structure was determined by X-ray diffraction. The X-ray diffraction patterns of the analyzed samples revealed a strong dependence of the $ZrO_xN_{y}$ film structure on composition. A two layer model, the Bruggeman effective medium approximation and both Drude absorption edge and Lorentz oscillators were used to describe the surface roughness layer and the main $ZnO_xN_{y}$ layer, respectively, was used to describe the experimental ellipsometric data. The optical band gap was decreased from 3.56 to 3.45 eV with changing nitrogen content, while refractive index at 650 nm simultaneously was increased from 1.98 to 2.11.
Źródło:: Acta Physica Polonica A; 2013, 124, 1; 141-145
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Fabrication and Properties of Amorphous Zinc Oxynitride Thin Films
Autorzy:: Kaczmarski, J.
Borysiewicz, M.
Pągowska, K.
Kamińska, E.
Powiązania:: https://bibliotekanauki.pl/articles/1398691.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Gc
81.15.Cd
72.80.Ng
73.61.Jc
Opis:: Zn-O-N thin films fabricated by reactive radio frequency magnetron sputtering have been investigated for their compositional, structural, transport and optical properties. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous films with the Hall mobility within the range from 15 to 80 cm²/(V s). In addition, it has been observed that the Hall mobility increases for Zn-O-N. Since it has a narrower bandgap than ZnO, it is put forward that the high mobility is due to the valence band maximum in this material lying above the trap states in the gap commonly observable in ZnO. These traps originate from oxygen vacancies and are localized at the bottom of the band gap influencing the carrier mobility.
Źródło:: Acta Physica Polonica A; 2016, 129, 1; 150-152
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Ultra-shallow nitrogen plasma implantation for ultra-thin silicon oxynitride (SiOxNy) layer formation
Autorzy:: Bieniek, T.
Beck, R. B.
Jakubowski, A.
Kudła, A.
Powiązania:: https://bibliotekanauki.pl/articles/308830.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOS technology
plasma processing
shallow implantation
radiation damage
Opis:: The radiation damage caused by low energy r.f. plasmas has not been, to our knowledge, studied so far in the case of symmetric planar plasma reactors that are usually used for PECVD processes. The reason is that, unlike nonsymmetrical RIE reactors, such geometry prevents, basically, high-energy ion bombardment of the substrate. In this work, we present the results of experiments in which we have studied the influence of plasma processing on the state of silicon surface. Very low temperature plasma oxidation has been used as a test of silicon surface condition. The obtained layers were then carefully measured by spectroscopic ellipsometry, allowing not only the thickness to be determined accurately, but also the layer composition to be evaluated. Different plasma types, namely N2, NH3 and Ar, were used in the first stage of the experiment, allowing oxidation behaviour caused by the exposure to those plasma types to be compared in terms of relative differences. It has been clearly proved that even though the PECVD system is believed to be relatively safe in terms of radiation damage, in the case of very thin layer processing (e.g., ultra-thin oxynitride layers) the effects of radiation damage may considerably affect the kinetics of the process and the properties of the formed layers.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 70-75
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology
Autorzy:: Bieniek, T.
Beck, R. B.
Jakubowski, A.
Głuszko, G.
Konarski, P.
Ćwil, M.
Powiązania:: https://bibliotekanauki.pl/articles/308685.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: CMOS
dual gate oxide
gate stack
oxynitride
plasma implantation
Opis:: The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 3-8
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes
Autorzy:: Bieniek, T.
Beck, R. B.
Jakubowski, A.
Konarski, P.
Ćwil, M.
Hoffman, P.
Schmeißer, D.
Powiązania:: https://bibliotekanauki.pl/articles/308689.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: CMOS
gate stack
oxynitride
plasma implantation
Opis:: Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization of NMOS Al-gate test structures fabricated with the investigated layers used as gate dielectric, are also discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 9-15
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: The effect of synthesis parameters on luminescence properties of Ca-α-Sialon: Eu²⁺
Wpływ parametrów syntezy wysokotemperaturowej na włsciwosci optyczne proszków Ca-α-Sialon:Eu2+
Autorzy:: Michalik, D.
Sopicka-Lizer, M.
Pawlik, T.
Lisiecki, R.
Powiązania:: https://bibliotekanauki.pl/articles/356259.pdf
Data publikacji:: 2013
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: phosphor
oxynitride
sialon
WLED
fosfor
tlenoazotek
Opis:: The goal of this study was to investigate influence of the synthesis parameters on the luminescence properties of Ca-α-Sialon doped with Eu²⁺. The compound of Eu_0.07Ca_0.73Si_9.6Al_2.4O_0.8N_15.2 was prepared by the solid state reaction method from the mixture of the relevant oxides, Si₃N₄ and CaCO₃. Synthesis was carried out in the temperature range of 1600-1700°C for 2-8 h in a reduction atmosphere (N₂+CO). The structure and morphology of obtained powders were analyzed by XRD and SEM/EDS methods, respectively. Content of nitrogen/oxygen was also measured. Optical properties were investigated by excitation, emission and reflection spectra. Obtained results show strong influence of synthesis temperature on the phase composition and intensity of emission of Ca- -Sialon:Eu²⁺ powder compound.
Celem badań było przeanalizowanie wpływu parametrów syntezy wysokotemperaturowej na właściwości ceramicznego proszku Ca- α -sialon domieszkowanego europem. Związek o stechiometrycznym wzorze Eu_0.07Ca_0.73Si_9.6Al_2.4O_0.8N_15.2 został przygotowany metodą reakcji w fazie stałej z odpowiednich tlenków. Si₃N₄ and CaCO₃ oraz CaCO₃. Reakcje wysokotemperaturowe prowadzono w zakresie temperatur 1600-1700 C przez 2-8h w atmosferze redukcyjnej (N₂+CO). Morfologię oraz skład chemiczny proszków zbadano przy użyciu skaningowego mikroskopu elektronowego z przystawką do mikroanalizy rentgenowskiej (SEM/EDS). Skład fazowy analizowano przy pomocy metod dyfrakcji rentgenowskiej (XRD). Określono stosunek tlen/azot w otrzymanych związkach. Scharakteryzowano zmiany właściwości optycznych na podstawie widm wzbudzenia, emisji oraz odbicia dyfuzyjnego (PL). Otrzymane wyniki prezentują wpływ temperatury syntezy na skład fazowy oraz intensywność emisji luminoforu Ca-α-Sialon: Eu²⁺.
Źródło:: Archives of Metallurgy and Materials; 2013, 58, 4; 1309-1312
1733-3490
Pojawia się w:: Archives of Metallurgy and Materials
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Metody instrumentalne w analizie materiałów zawierających węglik krzemu, azotek krzemu oraz tlenoazotki krzemu
Instrumental methods of chemical analysis of materials containing silicon carbide, silicon nitride and silicon oxynitrides
Autorzy:: Gerle, A.
Stec, K.
Burdyl, M.
Powiązania:: https://bibliotekanauki.pl/articles/392168.pdf
Data publikacji:: 2017
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Ceramiki i Materiałów Budowlanych
Tematy:: analiza chemiczna
analiza instrumentalna
analiza ilościowa
węglik krzemu
azotek krzemu
tlenko-azotek krzemu
chemical analysis
instrumental analysis
quantitative analysis
silicon carbide
silicon nitride
silicon oxynitride
Opis:: W pracy zaprezentowano wyniki oznaczania zawartości węgla całkowitego oraz węgla wolnego w materiałach zawierających węglik krzemu, azotek krzemu i tlenoazotki krzemu. Otrzymane zawartości C wykorzystywano do oznaczenia zawartości SiC w badanych materiałach. Prezentowana metoda oznaczania SiC jest dużo szybsza od klasycznych metod analitycznych. Otrzymane wartości stężenia SiC porównywano z danymi z certyfikatów oraz z wynikami otrzymanymi metodą klasyczną. Poprawność stosowanej metody oznaczania zawartości SiC została potwierdzona. W celu oznaczenia zawartości pierwiastków cięższych od fluoru zastosowano metodę fluorescencji rentgenowskiej. Przedstawiono wyniki uzyskane dla certyfikowanych materiałów odniesienia.
The results of total and free carbon determination in materials containing silicon carbide, silicon nitride and silicon oxynitrides have been presented. This method of SiC determination is much faster than the classical analytical method. The obtained C contents were used to determine SiC concentration in the examined materials. These concentrations were compared with certified values and concentrations obtained by the classical analytical method. The correctness of the method used to determine SiC content was proved. To determine the total concentrations of elements heavier than fluorine, X-ray fluorescence was used. The results obtained for certified reference materials have been presented.
Źródło:: Prace Instytutu Ceramiki i Materiałów Budowlanych; 2017, R. 10, nr 28, 28; 29-37
1899-3230
Pojawia się w:: Prace Instytutu Ceramiki i Materiałów Budowlanych
Dostawca treści:: Biblioteka Nauki

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