Wszystkie pola: normally-off - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Prospects and Development of Vertical Normally-off JFETs in SiC
Autorzy:: Bakowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/308249.pdf
Data publikacji:: 2009
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: JFET cascode
normally-off
SiC
vertical JFET
Opis:: This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations. The performance of analyzed concepts is compared in terms of blocking voltage, specific on-state resistance, maximum output current density and switching performance in the temperature range from 25 C degree to 250 C degree. The main objective of the analysis is to ascertain consequences of different design and technology options for the total losses and high temperature performance of the devices.
Źródło:: Journal of Telecommunications and Information Technology; 2009, 4; 25-36
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
Autorzy:: Taube, A.
Sochacki, M.
Szmidt, J.
Kamińska, E.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/226802.pdf
Data publikacji:: 2014
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: gallium nitride
MOS-HEMT
high electron mobility
transistor
AlGaN
GaN
simulation
Opis:: The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.
Źródło:: International Journal of Electronics and Telecommunications; 2014, 60, 3; 253-258
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

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