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Wyświetlanie 1-15 z 102
Tytuł:
Impact Ionization Driven Chaotic Photoluminescence Oscillations in Ga$\text{}_{0.47}$In$\text{}_{0.53}$As
Autorzy:
Godlewski, M.
Fronc, K.
Gajewska, M.
Chen, W.M.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1888119.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
72.70.+m
76.90.+d
Opis:
A new application of the Optically Detected Cyclotron Resonance (ODCR) is presented. We report impact ionization studies of bound exciton: (BE) and shallow donor related recombination processes in Ga$\text{}_{0.47}$In$\text{}_{0.53}$As. An appearance of chaotic oscillations in photoluminescence (PL) intensity is observed under condition of impact ionization of deeper donors.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 271-274
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ionization Energies of RE Ions in wide Bandgap Sulphides
Autorzy:
Świątek, K.
Godlewskl, M.
Powiązania:
https://bibliotekanauki.pl/articles/1879958.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
78.55.Et
Opis:
An analysis of rare earth (RE) energy level positions in wide bandgap sulphides is presented. It is shown that the Jörgensen's refined spin-pairing energy theory (RESPET) predicts correctly the photo-ionization (PI) energy of Sm in ZnS.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 247-250
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fe$\text{}^{2+}$ → Fe$\text{}^{3+}$ Ionization Transition in ZnSe
Autorzy:
Surma, M.
Godlewski, M.
Surkova, T. P.
Powiązania:
https://bibliotekanauki.pl/articles/1929647.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Fc
78.50.Ge
Opis:
Detailed photo-ESR study of iron and chromium impurities in ZnSe is presented. The energy level position of Fe$\text{}^{2+}\text{}^{/}\text{}^{3+}$ energy level is determined. The role of iron and chromium impurities in nonradiative recombination processes is discussed.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 547-550
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Field Ionization of Shallow Acceptors
Autorzy:
Dargys, A.
Žurauskas, S.
Žurauskienė, N.
Powiązania:
https://bibliotekanauki.pl/articles/1861465.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.Ej
73.20.Hb
79.70.+q
Opis:
Experimental studies on hole tunneling from the substitutional boron impurity into degenerate valence band of silicon single crystals are presented. The results are interpreted within the framework of acceptor ground state quartet splitting into the Kramers doublet due to presence of random strains and electric field in the lattice.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 629-632
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonance Ionization Spectroscopy and its Application
Autorzy:
Kluge, H.-J.
Powiązania:
https://bibliotekanauki.pl/articles/1931508.pdf
Data publikacji:
1994-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
32.80.Fb
Opis:
Resonance ionization spectroscopy and its combination with mass spectrometry offer very high sensitivity and selectivity. The application of several variants of resonance ionization mass spectroscopy to the study of nuclear ground state properties and trace analysis of radioactive isotopes in the environment is discussed as well as the inverse process, i.e. the laser induced recombination, of bare heavy ions stored at relativistic energies in storage rings.
Źródło:
Acta Physica Polonica A; 1994, 86, 1; 159-171
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
U$\text{}_{P}$, 3U$\text{}_{P}$, 11U$\text{}_{P}$: Above-Threshold Ionization Revisited
Autorzy:
Yang, Baorui
Schafer, K. J.
Walker, B.
Kulander, K. C.
Dimauro, L. F.
Agostini, P.
Powiązania:
https://bibliotekanauki.pl/articles/1931385.pdf
Data publikacji:
1994-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
32.80.Fb
31.90.+s
32.80.Rm
Opis:
Angular distributions of very high energy photoelectrons from Xe and Kr, excited by a 50 ps, 1054 um laser, are presented. In Xe strong, narrow structures 45° off the polarization axis appear on above-threshold ionization peaks within a limited energy range centered around 9U$\text{}_{P}$, where U$\text{}_{P}$ is the intensity-dependent ponderomotive energy. Under the same conditions the effect is much weaker in krypton. These structures are discussed using a very simple classical model as well as sophisticated single active electron calculations and the Keldysh-Faisal-Reiss theory. We conclude these structures are the result of single-electron dynamics involving rescattering of a tunneling component of the continuum wave function.
Źródło:
Acta Physica Polonica A; 1994, 86, 1; 41-50
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
Autorzy:
Wysmołek, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1932094.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
72.20.Ht
Opis:
Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 261-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Matrix-assisted laser desorption ionization. Time-of-flight mass spectrometric analysis of glycosphingolipids including gangliosides
Autorzy:
Taketomi, Tamotsu
Hara, Atsushi
Uemura, Kei-ichi
Sugiyama, Eiko
Powiązania:
https://bibliotekanauki.pl/articles/1044756.pdf
Data publikacji:
1998
Wydawca:
Polskie Towarzystwo Biochemiczne
Źródło:
Acta Biochimica Polonica; 1998, 45, 4; 987-999
0001-527X
Pojawia się w:
Acta Biochimica Polonica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polarization Dependence of Microwave "ionization" of Excited Hydrogen Atoms
Autorzy:
Koch, P. M.
Powiązania:
https://bibliotekanauki.pl/articles/1968532.pdf
Data publikacji:
1998-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
32.80.Rm
05.45.+b
42.50.Hz
Opis:
After a brief review of the ionization of excited hydrogen atoms by a linearly polarized field, we discuss experimental results for the polarization dependence of this process. Experiments at ω/2π = 9.904 GHz used two different ranges of principal quantum number n$\text{}_{0}$ between 29 and 98. At low scaled frequencies, Ω ≲ 0.1, ionization data for certain narrow ranges of n$\text{}_{0}$ exhibit striking sensitivity to fields with elliptical polarization not too far from circular polarization. Classical calculations reproduce this behavior and show it to be the result of 2ω driving terms that appear when the Hamiltonian is transformed to a frame rotating at ω. It shows how higher-dimensional dynamics can influence the ionization and be used to control it when the polarization departs from linear or circular polarization. At higher scaled frequencies, 0.6 ≲ Ω$\text{}_{0}$ ≲ 1.4, near the onset of ionization circularly and elliptically polarized data show surprising similarities with linearly polarized data in a parameter regime where the ionization dynamics is dominated by the influence of the pendulumlike resonance zone centered at scaled frequency n$\text{}_{0}^{3}$ω ≡ Ω$\text{}_{0}$ = 1. The stabilizing influence of this zone can be understood classically, but nonclassical stability associated with quantal separatrix states at its edge is a semiclassical effect.
Źródło:
Acta Physica Polonica A; 1998, 93, 1; 105-133
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of gamma-irradiation and storage time on the ascorbic acid concentration in onion bulbs [Allium cepa L.]
Autorzy:
Benkeblia, N.
Selselet-Attou, G.
Powiązania:
https://bibliotekanauki.pl/articles/24438.pdf
Data publikacji:
1999
Wydawca:
Polska Akademia Nauk. Instytut Agrofizyki PAN
Tematy:
Allium cepa
ascorbic acid
irradiation
storage time
concentration
gamma-irradiation
bulb
ionization
onion
Źródło:
International Agrophysics; 1999, 13, 4
0236-8722
Pojawia się w:
International Agrophysics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Food irradiation of agricultural products in Algeria: Present situation and future developments
Autorzy:
Benkeblia, N.
Powiązania:
https://bibliotekanauki.pl/articles/24394.pdf
Data publikacji:
2000
Wydawca:
Polska Akademia Nauk. Instytut Agrofizyki PAN
Tematy:
food irradiation
traditional method
Algeria
ionization
cold chain
vegetable
fruit
agricultural product
Źródło:
International Agrophysics; 2000, 14, 2
0236-8722
Pojawia się w:
International Agrophysics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Local space charge effect in conventional avalanche counters at moderate specific ionization
Autorzy:
Sernicki, J.
Powiązania:
https://bibliotekanauki.pl/articles/146145.pdf
Data publikacji:
2000
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
avalanche counter
gas amplification
n-heptane vapour
pulse amplitude characteristic
space charge
Opis:
The purpose of this investigation is the determination of a simple criterion of local space charge effect in conventional avalanche counters at moderate specific ionization. Parallel-plate avalanche counters (PPAC) with an electrode spacing d from 0.1 to 0.4 cm have been used to register low-energy alpha particles at n-heptane vapour pressures of p ? 5 Torr. The criterion determined is a simple h/pm function describing the variability of the product of effective gas amplification and actual particle energy loss, where both the numerical h coefficient and the exponent m assume different values for the various values of d. The product variability at higher gas pressures in PPAC detector – having regard to practical side of criterion determined – can be relatively well described by a single linear function. The results obtained are discussed from their veracity point of view.
Źródło:
Nukleonika; 2000, 45, 2; 125-131
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single Ionization of He by High-Energy Proton and Antiproton. A QED Approach
Autorzy:
Bhattacharyya, S.
Pathak, K.
Powiązania:
https://bibliotekanauki.pl/articles/2014235.pdf
Data publikacji:
2000-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
34.80.Dp
82.30.Fi
Opis:
We have investigated single ionization of He by fast proton and antiproton using a QED approach. A field theoretical calculation gives the total cross-section of He in single ionization, from which it is seen that the projectile p$\text{}^{+}$ or p$\text{}^{-}$ gives almost the same values of cross-section. We have also compared our results with other theoretical and experimental results available in this context yet. Behaviour of the cross-section at a lower spectrum of projectile energy is discussed.
Źródło:
Acta Physica Polonica A; 2000, 98, 4; 335-344
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Comparison of Different Approximate Two-Component Relativistic Theories of Many-Electron Systems: A Case Study of the Ionization Energies of Two-Electron Ions
Autorzy:
Barysz, M.
Flocke, N.
Karwowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2027386.pdf
Data publikacji:
2001-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.15.-p
31.30.Jv
Opis:
The corrections to the ionization energies of two-electron ions due to relativistic effects are studied by different two-component relativistic methods. In particular, the results obtained by the standard Pauli-Cowan-Griffin method and by two variants of the Douglas-Kroll-Hess method (the one based on the free-particle transformation and the one in which the transformation accounts for the nuclear potential) are compared with those calculated using the four-component Dirac-Fock method. Limits of applicability of each of these methods have been indicated. Results acceptable in the whole range of the nuclear charge (relativistic corrections accurate up to 4% for Z≤85) are given only by the Douglas-Kroll-Hess method which goes beyond the free-particle transformation. Each of the other two approaches either underestimates or overestimates the corrections due to relativistic effects.
Źródło:
Acta Physica Polonica A; 2001, 99, 6; 631-641
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs
Autorzy:
Tomaszewski, D.
Łukasiak, L.
Gibki, J.
Jakubowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/308410.pdf
Data publikacji:
2001
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
SOI MOSFET
floating body
avalanche ionization
recombination
displacement current
admittance
Opis:
An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called "pinch-off" region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.
Źródło:
Journal of Telecommunications and Information Technology; 2001, 1; 57-60
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 102

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