Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "ion beam modification" wg kryterium: Wszystkie pola


Wyświetlanie 1-3 z 3
Tytuł:
Accelerators in materials research
Autorzy:
Turos, A.
Powiązania:
https://bibliotekanauki.pl/articles/147928.pdf
Data publikacji:
2005
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
materials research
accelerators
ion beam modification
ion beam analysis
Opis:
Abstract Since at least forty years accelerators of charged particles no longer belong to nuclear physics exclusively. This is especially true for accelerators at energies below 1 GeV. The vast majority of accelerators in this energy range is used for materials research and medicine. In materials research the applications are principally twofold: modifications of solids and surface layer microanalysis. Two most important challenges for materials research at the beginning of XXI century as determined by the Materials Research Society are: development of materials able to repair human body and development of materials for new electronic devices able to cope with the enormous amount of information to be stored and transmitted. The role of accelerators with regard to the challenges of modern technology will be discussed.
Źródło:
Nukleonika; 2005, 50,suppl.3; 11-15
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Beam Surface Modification of GaN Films for High Efficient Light Emitting Diodes
Autorzy:
Wu, G.
Lin, Y.
Tu, K.
Powiązania:
https://bibliotekanauki.pl/articles/1400460.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
41.75.Ak
81.65.-b
42.70.Qs
77.84.Bw
Opis:
Focused gallium (Ga) ion beam technology has been proposed to modify the surface of GaN thin films. Due to the significant advancement in nitride semiconductors, the solid-state light emitting diodes will gradually replace fluorescent lamps in the next decade. However, further improvements in light extraction and power efficiency are still highly desired. GaN is limited by its high refractive index, with low light escape cone angle at about 24.6°. The external quantum efficiency is low due to the unwanted reflection and absorption. As the patterning technology scales down to the nanometer level, photonic crystal lattice in the visible light wavelength range can be achieved. Therefore, we improved the external efficiency by the new design of hexagonal photonic crystal lattice with air hole arrays in the diameter of 150 nm and the depth of 120 nm. The Ga beam was accelerated at 30 kV and the ion current was 100 pA. The plane wave expansion method along with the finite difference time domain was useful to investigate the quantum confinement. The nanopatterning by the focused ion beam could save time and processing step. In addition, we have successfully prepared blue InGaN/GaN samples with hexagonal period of 200 nm. The device micro-photoluminescence results have demonstrated that the peak illumination intensity was improved by 30%.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 884-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Beam Induced Surface Modification of ta-C Thin Films
Autorzy:
Berova, M.
Sandulov, M.
Tsvetkova, T.
Kitova, S.
Bischoff, L.
Boettger, R.
Powiązania:
https://bibliotekanauki.pl/articles/1033772.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
carbon
ion implantation
atomic force microscopy
Opis:
Thin film samples (d ≈40 nm) of tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc, were implanted with Ga⁺ at ion energy E =20 keV and ion fluences D=3×10¹⁴-3×10¹⁵ cm¯² and N⁺ with the same energy and ion fluence D=3×10¹⁴ cm¯². The Ga⁺ ion beam induced surface structural modification of the implanted material, displayed by formation of new phase at non-equilibrium condition, which could be accompanied by considerable changes in the optical properties of the ta-C films. The N⁺ implantation also results in modification of the surface structure. The induced structural modification of the implanted material results in a considerable change of its topography and optical properties. Nanoscale topography and structural properties characterisation of the Ga⁺ and N⁺ implanted films were performed using atomic spectroscopy analysis. The observed considerable surface structural properties modification in the case of the higher fluence Ga⁺ implanted samples results from the relatively high concentration of introduced Ga⁺ atoms, which is of the order of those for the host element.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 299-301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies