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Wyszukujesz frazę "high aspect ratio" wg kryterium: Wszystkie pola


Wyświetlanie 1-5 z 5
Tytuł:
Zastosowanie procesu Boscha do plazmowego trawienia krzemu
Bosch process for silicon plasma etching
Autorzy:
Góra, K.
Kozłowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/192230.pdf
Data publikacji:
2011
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
proces Boscha
ICP
trawienie plazmowe krzemu
współczynnik kształtu
Bosch process
plasma etching
high aspect ratio
silicon etched profile
Opis:
W pracy opisano wielostopniowy proces plazmowy powszechnie znany jako proces Boscha. Składa się on z wielokrotnie powtarzanych sekwencji kroków trawienia i pasywacji. Dzięki temu można otrzymać w krzemie bardzo głębokie struktury o wysokim współczynniku kształtu. Proces zaimplementowano na urządzeniu Alcatel 601E. Końcowym efektem opracowanej procedury jest wytrawiony profil o wysokim współczynniku kształtu, pionowych ścianach i gładkiej powierzchni.
This paper reports on two step time multiplexed plasma etch process, widely known as a Bosch process. The Bosch process was implemented on Alcatel 601E plasma reactor. On the basis of this patented process we created the procedure to achieve high aspect ratio submicron trenches in silicon. A deep silicon etching Bosch process in ICP reactive ion plasma reactor was based on SF6/C4F8 chemistry. Process consists of two alternating etching and deposition cycles. In thirst step, SF6 a very effective source of F* radicals is responsible for etching. In second step C4F8 gas creates polymers layer that protect side wall from lateral etching. This technique consisting of series alternating etch and deposition cycles(each lasts only a few seconds) produces high aspect ratio features. The etch rate and thickness of deposition layer are controlled by gas flow and cycle time, respectively. Created recipe can be used to etch silicon high aspect ratio features with smooth vertical walls.
Źródło:
Materiały Elektroniczne; 2011, T. 39, nr 2, 2; 31-34
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The capabilities of electrodischarge microdrilling of high aspect ratio holes in ceramic materials
Autorzy:
Skoczypiec, S.
Machno, M
Bizoń, W.
Powiązania:
https://bibliotekanauki.pl/articles/407299.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
microdrilling
electrodischarge machining (WEDM)
ceramic materials
siliconized silicon carbide
SiSiC
Opis:
In the first part of the article the review of ceramic materials drilling possibilities was presented. Among the described methods special attention is paid to electrodischarge drilling. This process have especially been predicted for machining difficult-to-cut electrically conductive materials. The second part consist of the results analysis of electrodischarge microdrilling of siliconized silicon carbide. The experiment involves the impact of current amplitude, discharge voltage and pulse time on the hole depth, side gap, linear tool wear and mean drilling speed. The results shows that electrodischarge drilling is a good alternative when machining inhomogeneous ceramic materials and gives possibility to drill high aspect ratio holes with relatively high efficiency (the drilling speed >2 mm/min).
Źródło:
Management and Production Engineering Review; 2015, 6, 3; 61-69
2080-8208
2082-1344
Pojawia się w:
Management and Production Engineering Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio
Autorzy:
Musiał, A.
Sęk, G.
Maryński, A.
Podemski, P.
Misiewicz, J.
Löffler, A.
Höfling, S.
Reitzenstein, S.
Reithmaier, J.
Forchel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1492876.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
65.80.-g
Opis:
Hereby, we present a study of a thermal quenching of emission from self-assembled epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both ensemble and single dot regime. Pronounced interplay between the intensity of wetting layer and quantum dots originated emission was observed as the temperature was increased, evidencing a thermally activated energy transfer between the two parts of the system and an important role of the wetting layer in determining the optical properties of these anisotropic nanostructures. The carrier activation energies have been derived and possible carrier loss mechanisms have been analyzed. Single dot study revealed activation energies slightly varying from dot to dot due to size and shape distribution. The problem of the shape uniformity of individual quantum dot has also been addressed and possibility of additional carrier localization within the investigated structures has been found to be insignificant based on the recorded spectroscopic data.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 883-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High aspect ratio graphene nanosheets cause a very low percolation threshold for polymer nanocomposites
Autorzy:
Jan, R.
Habib, A.
Abbasi, H.
Powiązania:
https://bibliotekanauki.pl/articles/1061875.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Tm
Opis:
Liquid exfoliated, high aspect ratio (1272) graphene nanosheets (GNS) are dispersed in thermoplastic polyurethane (TPU) to prepare range of nanocomposites. A three fold increase in direct current conductivity is recorded at 0.0055 volume fraction (V_{f}) of GNS-TPU composites as compared to pristine TPU. It is suggested that the percolation threshold for conducting network achieved at low filler loadings is due to the high aspect ratio and homogeneous dispersion of GNS within the polymer. The experimental results are interpreted using interparticle distance model and modified power law. The two models predict threshold filler loading in 0.015-0.001 range volume fraction GNS based on the average values of mean length and no. of layers per nanosheet. The experimental results favor modified power law as it relies on aspect ratio of fillers. A slight deviation in our study from modified power law may be due to aggregation in as prepared GNS.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 478-481
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of the critical velocity of a straight wing with a high aspect ratio
Autorzy:
Thanh, Le Thi
Powiązania:
https://bibliotekanauki.pl/articles/45423968.pdf
Data publikacji:
2023
Wydawca:
Uniwersytet Zielonogórski. Oficyna Wydawnicza
Tematy:
prędkość krytyczna
aerodynamika
pręt
thin rod
divergence
linear aerodynamics
straight wing
high aspect ratio
critical velocity
Opis:
An aerodynamic problem on an air flow around a large aspect ratio rectangular wing is investigated in this study. According to the theory of Vlasov, the wing is considered to be a thin rod. External loads are assumed to be proportional to the airfoil angle of attack related to the dimensionless coefficient of the lift and the pitching moment coefficient. These coefficients depend on the airfoil parameters and the Mach number M and are determined by experimental measurements for subsonic and supersonic velocities. In this case, to define the unstable cases of the wing, one bases on the Lyapunov stability theory. Equations of bending and torsional free vibrations have resulted. Based on the analysis of natural frequencies (eigenfrequencies), it is possible to determine the changing positions of the real part and the imaginary part of the characteristic equation solution. These positions can cause instabilities for the wing such as torsional divergence and flutter.
Źródło:
International Journal of Applied Mechanics and Engineering; 2023, 28, 1; 105-117
1734-4492
2353-9003
Pojawia się w:
International Journal of Applied Mechanics and Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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