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Wyszukujesz frazę "chemical vapor deposition" wg kryterium: Wszystkie pola


Wyświetlanie 1-12 z 12
Tytuł:
Dual-Frequency Plasma Enhanced Chemical Vapor Deposition of Diamond-Like Carbon Thin Films
Autorzy:
Jamshidi, R.
Hosseini, S.
Ahmadizadeh, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1419912.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
Opis:
Dual-frequency plasma enhanced chemical vapor deposition was used to grow diamond-like carbon thin films from $CH_4,$ $H_2$ gas mixture. The effects of radio frequency, microwave power, and gas ratio were investigated. Various species have been identified in the $CH_4-H_2$ plasma using optical emission spectroscopy and their effects on film properties have been studied. Increasing the RF power to 400 W, the variation trend of refractive index and CH, $C_2$ intensity ratios change beyond the 300 W, but the growth rate shows the continuous increasing character from 6 to 11.6 nm/min. Increasing the hydrogen content in the system, the intensity ratio of CH, $C_2$, $CH^{+}$ and growth rate show decreasing tendency and the refractive index rises from 1.98 to 2.63. Adding MW produced plasma to the system grows the refractive index to 2.88 and growth rate to 10.8 nm/min. The water contact angle rises from 58.95° to 73.74° as the RF power increases to 300 W but begins to reduce until 400 W. In addition, the contact angle shows a growing tendency by increasing the hydrogen flow to the chamber. In addition, the structures of the films were investigated by the Raman spectroscopy.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 230-235
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis and Characterization of Molybdenum Disulfide Composite Coating on Steel Using Chemical Vapor Deposition
Autorzy:
Akbarzadeh, M.
Zandrahimi, M.
Moradpour, E.
Powiązania:
https://bibliotekanauki.pl/articles/351037.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
chemical vapor deposition method
solid lubricant coating
molybdenum disulfide
Opis:
Molybdenum disulfide (MoS2 ) is one of the most widely used solid lubricants applied in different ways on the surfaces under friction. In this work, AISI 316 austenitic stainless steel was coated with MoS2 , using chemical vapor deposition (CVD) at four different temperatures (400, 500, 600 and 700°C). Coatings properties were investigated using SEM, EDX, XRD and FTIR, Hardness Tester and Roughness tester. The results showed that with simultaneous evaporation of sulfur and molybdenum trioxide (MoO3 ) in the CVD chamber, a uniform coating layer containing MoS2 and MoO2 phases was formed. Increase in the substrate temperature resulted in the rise in the amount of MoS2 to MoO2 phases. The thickness, grain size and the hardness of the coating were 17-29 μm, 50-120 nm and 260-480 HV respectively. Friction tests carried out using pin-on-plate method under normal loads of 10 N under ambient conditions showed values of the friction coefficient 0.25-0.40.
Źródło:
Archives of Metallurgy and Materials; 2018, 63, 2; 555-562
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis of carbon nanotubes via chemical vapor deposition by using rareearth metals as catalysts
Autorzy:
Jędrzejewska, A.
Wnuk, K.
Kaleńczuk, R. J.
Borowiak-Paleń, E.
Powiązania:
https://bibliotekanauki.pl/articles/779342.pdf
Data publikacji:
2010
Wydawca:
Zachodniopomorski Uniwersytet Technologiczny w Szczecinie. Wydawnictwo Uczelniane ZUT w Szczecinie
Tematy:
nanorurki węglowe
chemiczne osadzanie CVD
spektroskopia Ramana
transmisyjna mikroskopia elektronowa
carbon nanotubes
chemical vapor deposition (CVD)
Raman spectroscopy
transmission electron microscopy
Opis:
This work presents the results of the synthesis of carbon nanotubes using the CVD method. Fe:MgO catalyst was used, also in combination with rare earth elements (gadolinium (Gd), dysprosium (Dy)), which when used alone, are not efficient as catalysts in nanotube growth. Synthesis was performed both at reduced pressure (10-3 mbar) and atmospheric pressure, with constant parameters dependent on the process parameters.
Źródło:
Polish Journal of Chemical Technology; 2010, 12, 3; 29-32
1509-8117
1899-4741
Pojawia się w:
Polish Journal of Chemical Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Electrical Properties of SnO₂:F Thin Films Prepared by Chemical Vapor Deposition Method
Autorzy:
Najafi, N.
Rozati, S.
Powiązania:
https://bibliotekanauki.pl/articles/1030319.pdf
Data publikacji:
2017-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
chemical vapor deposition
SnO₂:F thin films
structural properties
electrical properties
Opis:
Fluorine doped tin oxide (FTO) thin films were deposited onto glass substrate at different substrate temperatures by a simple and inexpensive method of air pressure chemical vapor deposition. The substrate temperature was kept constant at about 500°C as the optimum temperature, and air was used as both a carrier gas and the oxidizing agent. A very simple method of characterization were carried on to investigate the electrical and structural properties of the prepared thin films. The electrical parameters variations showed that these parameters vary with substrate temperature ranging from an insulator thin film to a highly conductive layer. X-ray diffraction also revealed the structure to be polycrystalline at higher temperatures compared to amorphous structure for lower temperatures.
Źródło:
Acta Physica Polonica A; 2017, 131, 2; 222-225
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Rays Response of Diamond Detectors Constructed Using Diamond Layers Produced by Low Power Microwave Chemical Vapor Deposition Reactor
Autorzy:
Kordyasz, A.
Bednarek, A.
Kowalczyk, M.
Tarasiuk, J.
Kulczycka, E.
Teodorczyk, M.
Gajewski, M.
Kordyasz, Ł.
Rowiński, O.
Lamparski, K.
Karwański, Ł.
Lipczewski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1402641.pdf
Data publikacji:
2015-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.75.-d
81.15.Gh
29.40.Vj
07.85.Fv
Opis:
The low power reactor for microwave chemical vapor deposition process is described. The rotating Mo holder of 12 mm diameter and 6 mm height with the diamond substrate was heated by 2.45 GHz microwaves to temperature about 800°C in the range of (1.5-7)% $CH_{4}//H_{2}$ mixture to create plasma at pressure 70 Tr. Stabilization of the holder temperature was performed by optical observation of radiation from the holder followed by adjusting of the magnetron power. Diamond detectors are produced using microwave chemical vapor deposition process grown on single crystal diamond high pressure high temperature Sumimoto substrates, [100] oriented. The response of diamond detectors for X-rays has been measured in the current mode using medical X-rays tube. The linear response of the diamond detector current versus X-ray tube current (dose) is presented.
Źródło:
Acta Physica Polonica A; 2015, 127, 5; 1555-1559
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition
Autorzy:
Bouridah, H.
Haoues, H.
Beghoul, M.
Mansour, F.
Remmouche, R.
Temple-Boyer, P.
Powiązania:
https://bibliotekanauki.pl/articles/1490976.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.ag
68.55.J-
61.46.Hk
81.07.Bc
Opis:
In this work, we investigate the formation of silicon nanocrystals in annealed low pressure chemical vapor deposition in situ nitrogen doped silicon thin films $(SiN_x)$ obtained at low temperature (465°C) by using a mixture of disilane $(Si_2H_6)$ and ammonia $(NH_3)$. Results show that nitrogen content in films plays an important role in defining the obtained films morphology in terms of crystallites sizes and their distribution. Indeed, according to the nitrogen content introduced in films, the crystalline state of films varies from a submicron crystalline structure to a nanocrystalline structure. An average silicon nanocrystalline size of 10 nm was obtained for film with x = 0.07 nitrogen content, annealed under a temperature of 850C during 2 h.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 175-177
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and characterization of multi-walled carbon nanotubes grown on transition metal catalysts
Autorzy:
Pełech, I.
Narkiewicz, U.
Kaczmarek, A.
Jędrzejewska, A.
Powiązania:
https://bibliotekanauki.pl/articles/779825.pdf
Data publikacji:
2014
Wydawca:
Zachodniopomorski Uniwersytet Technologiczny w Szczecinie. Wydawnictwo Uczelniane ZUT w Szczecinie
Tematy:
catalysts
carbon nanotubes
chemical vapor deposition
X-ray diffraction
thermogravimetry
Opis:
Transition metal catalysts (mainly: iron, cobalt and nickel) on various supports are successfully used in a largescale production of carbon nanotubes (CNTs), but after the synthesis it is necessary to perform very aggressive purification treatments that cause damages of CNTs and are not always effective. In this work a preparation of unsupported catalysts and their application to the multi-walled carbon nanotubes synthesis is presented. Iron, cobalt and bimetallic iron-cobalt catalysts were obtained by co-precipitation of iron and cobalt ions followed by solid state reactions. Although metal particles were not supported on the hard-to-reduce oxides, these catalysts showed nanometric dimensions. The catalysts were used for the growth of multi-walled carbon nanotubes by the chemical vapor deposition method. The syntheses were conducted under ethylene - argon atmosphere at 700°C. The obtained catalysts and carbon materials after the synthesis were characterized using transmission electron microscopy (TEM), X-ray diffraction method (XRD), Raman spectroscopy and thermogravimetric analysis (TG). The effect of the kind of catalyst on the properties of the obtained carbon material has been described.
Źródło:
Polish Journal of Chemical Technology; 2014, 16, 1; 117-122
1509-8117
1899-4741
Pojawia się w:
Polish Journal of Chemical Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evaluating the Durability of SiC-Coated Carbon Composites Under Thermal Shock Conditions
Autorzy:
Lee, Ji Eun
Bae, Soo Bin
Cho, Nam Choon
Lee, Hyung Ik
Meng, Zicheng
Lee, Kee Sung
Powiązania:
https://bibliotekanauki.pl/articles/2049309.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
durability
carbon composites
silicon carbide coating
chemical vapor deposition
chemical vapor reaction
Opis:
Oxidation and indentation properties of silicon carbide-coated carbon composites were investigated to analyze its durability under atmospheric thermal shock conditions. The silicon carbide-coated samples were prepared either with chemical vapor deposition or chemical vapor reaction/chemical vapor deposition hybrid coating. The remnant weight of uncoated and coated samples was investigated after each thermal shock cycle. The surface and cross-section of coated samples were then analyzed to confirm morphological changes of the coating layers. The spherical indentation test for uncoated and coated samples were also performed. As a result, silicon carbide coating improved the oxidation resistance, elastic modulus, and hardness of carbon composites. Hybrid coating drastically enhanced the durability of samples at high temperature in atmospheric conditions.
Źródło:
Archives of Metallurgy and Materials; 2021, 66, 3; 777-782
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimisation of LT-GaN nucleation layer growth conditions for the improvement of electrical and optical parameters of GaN layers
Autorzy:
Wośko, Mateusz
Powiązania:
https://bibliotekanauki.pl/articles/174388.pdf
Data publikacji:
2019
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
GaN
nucleation
recrystallization
metalorganic chemical vapor deposition
nitrides
LED
MSM
MESFET devices
Opis:
In this work we present the influence of low temperature gallium nitride (LT-GaN) nucleation layer deposition and recrystallization conditions on the electrical and optical properties of buffer and active layer of metal–semiconductor field-effect transistor (MESFET) structure. MESFET structures were used to investigate the properties of bulk materials that determine also the performance of many type GaN based devices, like light emitting diodes (LEDs), high electron mobility transistors (HEMTs) and metal–semiconductor–metal (MSM) detectors. The set of n-GaN/u-GaN/sapphire structures using different nucleation LT-GaN layers thickness and different annealing times was deposited using AIXTRON CCS epitaxial system. In contrast to typical procedure, the high resistive GaN buffer layer was not obtained by intentional Fe/Mg doping, but by specific adjustment of GaN nucleation conditions and recrystallization process parameters that introduce carbon atoms in epitaxial layers, that serve as donors. Generally, low pressure (below 200 mbar) in a reactor chamber, during initial stages of nucleation and recrystallization as well as HT-GaN epitaxy, promotes the growth of high resistive material. Obtained results show that annealing/recrystallization time of LT-GaN has a significant impact on the electrical and optical properties of GaN buffer layers. Longer annealing periods tend to promote crystallization of material with higher electron mobility and higher Si dopant incorporation/activation while maintaining high resistivity in u-GaN buffer area. It was shown that the dimensions of the GaN islands, that could be influenced by the duration of an annealing step of LT-GaN growth, have no impact on the HT-GaN buffer layer coalescence process and material resistivity, but influences mainly electrical properties of active n-GaN layer. Author suggests that the key parameters that are determining the buffer resistivity are the pressure and temperature during LT-GaN annealing and buffer layer coalescence. The influence of GaN island diameters, after LT-GaN annealing, on the u-GaN resistivity was not confirmed.
Źródło:
Optica Applicata; 2019, 49, 1; 167-176
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation of Self-cleaning Polyester Fabrics by Chemical Vapor Deposition of Methyltrichlorosilane/Dimethyldichlorosilane
Opracowanie samooczyszczających tkanin poliestrowych za pomocą chemicznego osadzania z fazy gazowej metylotrichlorosilanu/dimetylodichlorosilanu
Autorzy:
Zheng, Z.
Wang, H.
Zhang, N.
Zhao, X.
Powiązania:
https://bibliotekanauki.pl/articles/232997.pdf
Data publikacji:
2017
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Biopolimerów i Włókien Chemicznych
Tematy:
superhydrophobic
polyester fabric
self-cleaning
permeability
superhydrofobowość
tkanina poliestrowa
tkanina samooczyszczająca
przepuszczalność powietrza
Opis:
Self-cleaning polyester fabrics were prepared by a simple gas phase deposition procedure in which a layer of polydimethylsiloxane nanofilaments was grown onto textile fibers. Superhydrophobic and self-cleaning properties, tensile breaking strength, mechanical stability and permeability of polyester fabrics were investigated. The results showed that the fabrics deposited had superhydrophobicity, and the contact angle and sliding angle of the fabric surface were 159° and 1.7°, respectively. The self-cleaning test showed that dust particles adhere to rolling water and shed from the surface of polyester fabric, leaving an extremely clean surface. In addition, the polyester fabric deposited still has excellent breaking strength and permeability. This approach is simple, inexpensive and has little effect on the mechanical properties of the fabric.
Samooczyszczające tkaniny poliestrowe przygotowano metodą chemicznego osadzania z fazy gazowej, w którym warstwa nanofilamentów polidimetylosiloksanu narastała na włóknach tekstylnych powodując superhydrofobowość i nadając właściwości samoczyszczące. Po obróbce badano wytrzymałość na zerwanie, trwałość mechaniczną i przepuszczalność powietrza. Wyniki wykazały, że zmodyfikowane tkaniny miały właściwości superhydrofobowe, a kąty zwilżania i poślizgu po powierzchni tkaniny wynosiły odpowiednio 159° i 1,7°. Testy zdolności samooczyszczających wykazały, że cząsteczki pyłu przylegają do cząstek wody i wraz z nią spływają po powierzchni tkaniny poliestrowej. Zastosowana metoda jest prosta, niedroga i nie wpływa negatywnie na obrabianą tkaninę.
Źródło:
Fibres & Textiles in Eastern Europe; 2017, 1 (121); 121-124
1230-3666
2300-7354
Pojawia się w:
Fibres & Textiles in Eastern Europe
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and characterization of catalyst mix Fe-Co/MgO for carbon nanotubes growth
Autorzy:
Steplewska, A.
Jędrzejewski, R.
Borowiak-Palen, E.
Powiązania:
https://bibliotekanauki.pl/articles/779026.pdf
Data publikacji:
2008
Wydawca:
Zachodniopomorski Uniwersytet Technologiczny w Szczecinie. Wydawnictwo Uczelniane ZUT w Szczecinie
Tematy:
katalizator
analiza termograwimetryczna
osadzanie chemiczne z fazy gazowej
nanorurki węglowe
catalyst
thermogravimetric analysis (TGA)
chemical vapor deposition (CVD)
carbon nanotubes
Opis:
Fe-Co/MgO is one of the most common catalyst mix applied to carbon nanotubes (CNTs) growth in chemical vapor deposition process. Therefore, here we present detailed study on the preparation and characterization of Fe-Co/MgO. The precursors of Fe and Co are iron (II) acetate and cobalt acetates, correspondingly. The molar ratio of the catalyst mix is Fe:Co:MgO=1:1:100. Initially, thermogravimetric analysis (TGA) of the mixture was performed. TGA analysis of it indicated the stepwise mass losses which pointed out the crucial thermal conditions for the changes in the elemental composition, morphology, crystallographic structure and vibrational properties. In current state of the art the lowest growth temperature for singlewalled carbon nanotubes is 550°C in CVD technique and here the characterization of the catalyst mix strongly suggest that this temperature can be decreased what would enhance the compatibility of CNT growth with current complementary metal-oxide-silicon (CMOS) technology for CNTs-based nanoelectronics. The morphology, crystallographic structure, elemental composition of the samples and its spectroscopic properties were performed via high resolution transmission electron microscopy (TEM), X-ray diffraction (XRD) and Infrared spectroscopy (IR), respectively.
Źródło:
Polish Journal of Chemical Technology; 2008, 10, 3; 1-3
1509-8117
1899-4741
Pojawia się w:
Polish Journal of Chemical Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cold plasma in the nanotechnology of catalysts
Autorzy:
Tyczkowski, J.
Kapica, R.
Powiązania:
https://bibliotekanauki.pl/articles/778491.pdf
Data publikacji:
2007
Wydawca:
Zachodniopomorski Uniwersytet Technologiczny w Szczecinie. Wydawnictwo Uczelniane ZUT w Szczecinie
Tematy:
kataliza
nanostruktura
plazma zimna
CVD
tlenek kobaltu
cienka warstwa
catalysis
nanostructures
cold plasma
metal-organic chemical vapor deposition
cobalt oxides
thin films
Opis:
In the paper the preparation of catalysts with the use of cold plasmas is discussed. A special attention is focused on nanocatalysts. In general, there are three main trends in this field: (1) plasma enhanced preparation of ..classical" catalysts, (2) plasma sputtering of catalytically active compounds, especially metal and metal oxide nanoparticles, and (3) plasma-enhanced metal-organic chemical vapor deposition (PEMOCVD) of very thin metal and metal oxide films with specific nanostructure. It is shown that the cold plasma techniques are very effective methods for designing the nanocatalysts with distinct and tunable chemical activity, specificity and selectivity. Finally, our preliminary investigations concerning CoOx catalytic films fabricated by the PEMOCVD method are presented.
Źródło:
Polish Journal of Chemical Technology; 2007, 9, 1; 36-42
1509-8117
1899-4741
Pojawia się w:
Polish Journal of Chemical Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-12 z 12

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