- Tytuł:
- Photoluminescence Study of GaN
- Autorzy:
-
Zhang, X.
Kung, P.
Saxler, A.
Walker, D.
Wang, Τ.
Razeghi, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1933686.pdf
- Data publikacji:
- 1995-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.66.-w
71.55.Eq
68.55.-a - Opis:
- Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al$\text{}_{2}$O$\text{}_{3}$ (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emission centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 4; 601-606
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł