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Wyszukujesz frazę "THz radiation" wg kryterium: Wszystkie pola


Wyświetlanie 1-8 z 8
Tytuł:
Mechanism of Radiation Coupling to Plasma Wave Field Effect Transistor Sub-THz Detectors
Autorzy:
Sakowicz, M.
Łusakowski, J.
Karpierz, K.
Grynberg, M.
Gwarek, W.
Knap, W.
Boubanga, S.
Powiązania:
https://bibliotekanauki.pl/articles/1811983.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.40.Ba
52.40.Fd
85.30.Tv
07.57.Kp
Opis:
Detection of 100 GHz and 285 GHz electromagnetic radiation by GaAs/AlGaAs field effect transistors with the gate length of 150 nm was investigated at 300 K as a function of the angleαbetween the direction of linear polarization of the radiation and the symmetry axis of the field effect transistors. The angular dependence of the detected signal was found to be Acos²(α-α₀)+C. A response of the transistor chip (including bonding wires and the substrate) to the radiation was numerically simulated. Calculations confirmed experimentally observed dependences and allowed to investigate the role of bonding wires and contact pads in coupling of the radiation to the transistor channel.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1337-1342
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz photomixer
Autorzy:
Pliński, E.
Powiązania:
https://bibliotekanauki.pl/articles/200658.pdf
Data publikacji:
2010
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
continuous wave optical devices
THz photomixers
terahertz radiation
Opis:
The paper gives a review of continuous wave optical devices called THz photomixers used for excitation and detection of the terahertz radiation. Possible structures of the terahertz photomixers are classified and described.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2010, 58, 4; 463-470
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Microscopic Approach for THz Intersubband Challenges
Autorzy:
Pereira, M. F.
Powiązania:
https://bibliotekanauki.pl/articles/308177.pdf
Data publikacji:
2009
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
band structure engineering
coupled valence bands
intersubband laser
intersubband transitions
lasing without inversion
terahertz radiation
Opis:
The main candidate to be a practical and low cost high power THz source is the intersubband-based quantum cascade laser, which can have a tremendous impact in many practical applications, including last mile and indoor telecommunication systems. In this review we discuss current challenges for THz intersubband device development from a microscopic point of view. Next summarize the search for new mechanisms and structure designs that can lead to intersubband gain without population inversion. This is a very important topic of current research, since is both an extremely elegant phenomenon from the basic physics of view and crucial for effective lasing in the THz range. The reason is that scattering phenomena can lead to level broadenings of the same order of magnitude of the lasing transitions, making population inversion by carrier injection in upper lasing subbands extremely difficult. Previous work in the literature is compared and contrasted with a new scheme that may lead to high temperature lasing by engineering the nonequilibrium population inversion with a combination of band structure and many body effects mediated by a k-space filter.
Źródło:
Journal of Telecommunications and Information Technology; 2009, 4; 118-123
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Digital communication : optical vs. THz links
Autorzy:
Marczewski, Jacek
Powiązania:
https://bibliotekanauki.pl/articles/1818244.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
mobile communication
optical links
Shannon theorem
THz radiation
THz links
Opis:
The paper presents a comprehensive look at the perspectives on the use of THz in digital communication systems. The publication aims to focus on arguments that justify a significant increase in the frequency of radio links and their integration with fibre-based networks. Comparison of THz links with their microwave and optical counterparts is discussed from basic physical limitations to technological constraints. Main attention is paid to the available channel capacity resulting from its bandwidth and signal-to-noise ratio. The short final discussion is about technology platforms that seem to be crucial to the availability of suitable THz sources. According to the author, the biggest advantage of using bands in the range of several hundred GHz for a digital data transmission is their use for mobile communication over short distances, as well as for broadband indoor links. However, these applications require a development of compact electronic THz sources with low noise and power reaching single watts. This is beyond the range of the most popular silicon-based technology platform, although a significant progress can be expected with the development of technologies based on wide bandgap semiconductors. Fibre optic connections remain the unquestioned leader in communication over long distances and permanent links.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 176--181
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Digital communication : optical vs. THz links
Autorzy:
Marczewski, Jacek
Powiązania:
https://bibliotekanauki.pl/articles/1818239.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
mobile communication
optical links
Shannon theorem
THz radiation
THz links
Opis:
The paper presents a comprehensive look at the perspectives on the use of THz in digital communication systems. The publication aims to focus on arguments that justify a significant increase in the frequency of radio links and their integration with fibre-based networks. Comparison of THz links with their microwave and optical counterparts is discussed from basic physical limitations to technological constraints. Main attention is paid to the available channel capacity resulting from its bandwidth and signal-to-noise ratio. The short final discussion is about technology platforms that seem to be crucial to the availability of suitable THz sources. According to the author, the biggest advantage of using bands in the range of several hundred GHz for a digital data transmission is their use for mobile communication over short distances, as well as for broadband indoor links. However, these applications require a development of compact electronic THz sources with low noise and power reaching single watts. This is beyond the range of the most popular silicon-based technology platform, although a significant progress can be expected with the development of technologies based on wide bandgap semiconductors. Fibre optic connections remain the unquestioned leader in communication over long distances and permanent links.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 176--181
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation
Autorzy:
Łusakowski, J.
Knap, W.
Kamińska, E.
Piotrowska, A.
Gavrilenko, V.
Powiązania:
https://bibliotekanauki.pl/articles/2035755.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.30.+q
73.61.Ey
Opis:
Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 545-551
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Właściwości i zastosowania nematycznych ciekłych kryształów w technologii terahercowej
Properties and Applications of Nematic Liquid Crystals in THz Technology
Autorzy:
Chodorow, U.
Parka, J.
Powiązania:
https://bibliotekanauki.pl/articles/210809.pdf
Data publikacji:
2013
Wydawca:
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
Tematy:
technologia terahercowa
ciekłe kryształy
promieniowanie THz
terahertz technology
liquid crystals
THz radiation
Opis:
Prace nad technologią terahercową (THz) prowadzone są już od przeszło trzech dekad, podczas gdy badania nad wykorzystaniem ciekłych kryształów (CK) w zakresie THz trwają dopiero od dekady. W artykule przedstawione zostały wyniki pomiarów spektralnych CK w obszarze Thz. Opisano wybrane właściwości komercyjnie dostępnego związku CK o symbolu 5CB oraz dwóch mieszanin CK o nazwach 1832B i 1825. Korzystając z dostępnej literatury, zostało wybranych i omówionych kilka urządzeń modulujących promieniowanie THz, w których jako elementy przestrajalne wykorzystane zostały ciekłe kryształy.
Works on terahertz (THz) technology have been conducted for over three decades while research on the use of liquid crystals in the THz range lasted only a decade. In the paper, the results of spectral measurements of LC in the THz range are presented. Selected properties of a commercially available LC compound with the symbol 5CB and two LC mixtures called 1832B and 1825 are described. Using available literature, several devices, which modulate the THz radiation, were selected and discussed. In these devices, liquid crystals were used as tunable elements.
Źródło:
Biuletyn Wojskowej Akademii Technicznej; 2013, 62, 1; 13-30
1234-5865
Pojawia się w:
Biuletyn Wojskowej Akademii Technicznej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications
Autorzy:
Adomavičius, R.
Balakauskas, S.
Bertulis, K.
Geižutis, A.
Molis, G.
Krotkus, A.
Powiązania:
https://bibliotekanauki.pl/articles/2041645.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.Re
07.57.Hm
78.47.+p
Opis:
Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 128-131
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-8 z 8

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