Wszystkie pola: THz detectors - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Mechanism of Radiation Coupling to Plasma Wave Field Effect Transistor Sub-THz Detectors
Autorzy:: Sakowicz, M.
Łusakowski, J.
Karpierz, K.
Grynberg, M.
Gwarek, W.
Knap, W.
Boubanga, S.
Powiązania:: https://bibliotekanauki.pl/articles/1811983.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 84.40.Ba
52.40.Fd
85.30.Tv
07.57.Kp
Opis:: Detection of 100 GHz and 285 GHz electromagnetic radiation by GaAs/AlGaAs field effect transistors with the gate length of 150 nm was investigated at 300 K as a function of the angleαbetween the direction of linear polarization of the radiation and the symmetry axis of the field effect transistors. The angular dependence of the detected signal was found to be Acos²(α-α₀)+C. A response of the transistor chip (including bonding wires and the substrate) to the radiation was numerically simulated. Calculations confirmed experimentally observed dependences and allowed to investigate the role of bonding wires and contact pads in coupling of the radiation to the transistor channel.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1337-1342
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Design of integrated readout circuit for NMOS THZ detectors based on chopper ampliﬁer concept
Autorzy:: Kołaciński, C
Obrębski, D.
Zagrajek, P.
Powiązania:: https://bibliotekanauki.pl/articles/397722.pdf
Data publikacji:: 2014
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: NMOS-based terahertz detector
chopper ampliﬁer
instrumentation amplifier
voltage controlled ampliﬁer
programmable gain ampliﬁer
readout circuit
detektor terahercowy
chopper
wzmacniacz instrumentacyjny
wzmacniacz sterowany napięciem
wzmacniacz PGA
obwód odczytujący
Opis:: This paper deals with design of readout circuit dedicated for NMOS-based terahertz detectors. The proposed architecture bases on chopper ampliﬁer and instrumentation ampliﬁer concepts. The main objectives were high gain (max. 100 dB) and proper operation with NMOS-based THz detectors. Three different architectures of measurement ampliﬁer designed for the research project are discussed in this paper. The designed chip was manufactured in AMS C35B4 process (350 nm feature size). Another issue described in this paper is dedicated, non-typical testing environment. At the end a few measurement results are shown.
Źródło:: International Journal of Microelectronics and Computer Science; 2014, 5, 1; 14-24
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Development of the NMOS-based THz detectors and the readout systems for THz spectroscopy and imaging
Autorzy:: Kołaciński, C.
Obrębski, D.
Marczewski, J.
Zbieć, M.
Kucharski, K.
Zagrajek, P.
Kopyt, P.
Powiązania:: https://bibliotekanauki.pl/articles/397805.pdf
Data publikacji:: 2017
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: NMOS-based terahertz detector
readout system
detektor terahercowy
obwód odczytujący
Opis:: This paper summarizes the work performed within the Polish applied research project THzOnLine aiming at multipixel THz detectors based on selective NMOS transistors and its application in biology, medicine and security systems, completed in 2016. It starts with presentation of techniques applied for increasing the efficiency of THz detectors, i.e. used to maximize the output voltage yielded from NMOS-based detecting devices when exposed to a THz radiation. In the second part of this work the authors focuse on issues related to development of the readout electronics for these devices, as well as present the collection of integrated circuits and two complete measurement systems constructed by them.
Źródło:: International Journal of Microelectronics and Computer Science; 2017, 8, 3; 101-109
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Compact terahertz devices based on silicon in CMOS and BiCMOS technologies
Autorzy:: But, Dmytro B.
Chernyadiev, Alexander V.
Ikamas, Kęstutis
Kołaciński, Cezary
Krysl, Anastasiya
Roskos, Hartmut G.
Knap, Wojciech
Lisauskas, Alvydas
Powiązania:: https://bibliotekanauki.pl/articles/2204176.pdf
Data publikacji:: 2023
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:: terahertz
teraFET
CMOS
THz emitter
THz detectors
Opis:: This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW/√Hz and the emitted power in the range of 100 μW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise ratio reaching 70 dB for 1 Hz-equivalent noise bandwidth. The applicability of these compact devices for a variety of applications including imaging, spectroscopy or wireless communication links was also demonstrated.
Źródło:: Opto-Electronics Review; 2023, 31, 2; art. no. e144599
1230-3402
Pojawia się w:: Opto-Electronics Review
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation
Autorzy:: Łusakowski, J.
Knap, W.
Kamińska, E.
Piotrowska, A.
Gavrilenko, V.
Powiązania:: https://bibliotekanauki.pl/articles/2035755.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.30.+q
73.61.Ey
Opis:: Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 545-551
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: THz Double-Grating Gate Transistor Detectors in High Magnetic Fields
Autorzy:: But, D.
Dyakonova, N.
Coquillat, D.
Teppe, F.
Knap, W.
Watanabe, T.
Tanimoto, Y.
Boubanga Tombet, S.
Otsuji, T.
Powiązania:: https://bibliotekanauki.pl/articles/1409591.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
85.30.Tv
73.43.Qt
Opis:: Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1080-1082
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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