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Wyszukujesz frazę "Mironov, M" wg kryterium: Wszystkie pola

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    Wyświetlanie 1-14 z 14
    Tytuł:
    Optical Study of MBE Grown Undoped Si-Si$\text{}_{1-x}$Ge$\text{}_{x}$/Si Superlattices
    Autorzy:
    Gnezdilov, V. P.
    Mironov, M.
    Yshakov, V.
    Mironov, O. A.
    Phillips, P. J.
    Parker, E. H. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952678.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.-j
    78.66.-w
    78.66.Db
    Opis:
    Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si$\text{}_{0.78}$Ge$\text{}_{0.22}$ superlattices grown by molecular beam epitaxy on (001)Si at different substrate temperatures. The results are interpreted to give information on material and interface quality, layer thicknesses, and state of strain. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1045-1049
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Technology and Investigation of Ohmic Contacts to Thermoelectric Materials
    Autorzy:
    Shtern, Y.
    Mironov, R.
    Shtern, M.
    Sherchenkov, A.
    Rogachev, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398783.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Np
    Opis:
    Technology is developed, materials and regimes of the fabrication of ohmic contacts to the effective thermoelectric materials $Bi_{2}Te_{2.8}Se_{0.2}$ (n-type) and $Bi_{0.5}Sb_{1.5}Te_{3}$ (p-type) are determined. Ohmic contacts were obtained by the vacuum deposition of nickel. Factors determining adhesion strength and resistivity of fabricated contacts are determined. Process of surface preparation of the thermoelectric materials before the ohmic contact deposition is optimized during the technology development. The use of electrochemical polishing, ultrasound treatment, finish cleaning in toluene and isopropyl alcohol vapor, and annealing in vacuum allowed achieving stable results in the formation of contacts. It was shown that contacts fabricated using of electron-beam evaporation of nickel possess maximum adhesion strength of 18-19 N/mm². It was found that high adhesion is caused by the existence of transition layer in the metal-thermoelectric material contact range, formed due to the interaction of metal with the components of thermoelectric material. Proposed technology allows obtaining ohmic contacts with the resistance of the unit area not exceeding $10^{-10}$ Ohm m².
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 785-787
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Intellectual Precise Temperature Sensor with Wireless Interface
    Autorzy:
    Shtern, M.
    Kozhevnikov, Ya.
    Shtern, Yu.
    Mironov, R.
    Karavaevand, I.
    Rogachev, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398780.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.20.Dt
    Opis:
    Intellectual precise temperature sensor with wireless interface (ITWS) for contact measurements with absolute error of ± 0.05°C in the temperature range from 5 to 95°C was developed. Platinum thin film resistance thermometer was used as the sensitive unit. High accuracy of measurements is supported by following. Investigations and modeling of temperature dependence of resistivity for sensitive unit allowed to develop mathematical model ensuring calculation of temperature with the error not exceeding $ 5 \times 10^{-3\circ} C$. Original patented design, and hardware and software solutions for ITWS were developed. Method and mathematical models for thermocompensation of electronic components of ITWS were elaborated, which allowed sufficient decrease of measurement error during measurements and exploitation. Methodology, and hardware and software measuring system for individual ITWS calibration in automatic regime were developed, which include correction of mathematical model for the calculation of temperature for each sensor. ITWS has several design and technological solutions, and is developed for the temperature measurements of heat transfer agent in the pipelines of heating and hot water supply systems, independently of pipeline diameter. Measured data are transferred by radio channel to the recording and display devices. ITWS are used in automated systems for energy carrier controlling and determination of individual heat consumption. ITWS consists of following modules: sensitive unit, analog-to-digital converter, microcontroller, radio transceiver (carrier frequency is 434 or 868 MHz, output power of transmitter is not more than 10 mW), antenna and power supply (3.6 V).
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 779-781
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Technology of Thin Film Fabrication on Porous Metal Oxide Substrates
    Autorzy:
    Shtern, Yu.
    Shtern, M.
    Mironov, R.
    Sherchenkov, A.
    Rogachev, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398772.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Np
    Opis:
    One of the main issues of the device technology on metal-dielectric (MD) substrates is poor adhesion of thin metallic films, which are used for interconnections in electrical circuits. Films are formed by vacuum deposition on a porous dielectric layer of substrates. The presence of pores sufficiently complicates the cleaning of the substrate surface, which significantly decreases the adhesion of the film deposited on it. Technology of metal films with high adhesion, fabricated by ion-plasma method is proposed in this work. Films were deposited on MD substrates produced by electrochemical oxidation of aluminum alloys. The main operations of the technology are the following. Removal of residual electrolyte after the oxidation is carried out by rinsing of substrates initially under running hot water, and then in deionized water, followed by drying in a flow of heated nitrogen. Annealing of substrates under the pressure of $10^{-3}$ Pa and temperature of 550-570 K for 20 min is carried on in the vacuum chamber before the deposition of metal films. Copper is used as the main material of the interconnection films. Adhesion sublayer is fabricated on the basis of chromium or vanadium, which have high enthalpy of the oxide formation. Measurements showed that the copper films with the thickness of 1.5 μm, deposited on the vanadium sublayer with the thickness of 0.12 μm, which is comparable with the roughness of oxide layer, have adhesion of $25 N//mm^{2}$ at the temperature of 520 K. Investigation of adhesion was carried on by the method of direct tear off with the error of up to 10%.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 776-778
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Intellectual System for Controlling the Individual Heat Consumption
    Autorzy:
    Mironov, R.
    Shtern, Yu.
    Kozhevnikov, Ya.
    Shtern, M.
    Karavaev, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1187453.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.40.Xb
    Opis:
    A new concept for determining the individual heat consumption in the heating systems of the apartment houses, which was realized in the intellectual system, developed by authors, for controlling the individual heat consumption, is proposed. Concept is based on the use of virtual measuring channels, determined by the technology of intellectual precise temperature sensors and flow meters for heat carrier in heating systems. Configuration of measuring channels is determined by software means, and can be operatively changed during exploitation. Methods and mathematical models for the calculation of individual heat consumption were determined, including calculation and distribution of total house heat consumption. Design principle of intellectual system for controlling the individual heat consumption was determined. Original design solutions, and hardware and software means for electronic components were developed. System carries out direct measurements of heat consumption, and performs data reception and transmission from electronic measuring and controlling components using radio channel at frequencies of 434 or 868 MHz, then it is performing calculations and displaying results. Results of calculations in real measuring units are displayed on the local retranslator and apartment monitor. Exclusive feature of this concept is associated with the possibility of measuring of total house heat consumption. Estimation of confidence limits of systematic measurement error of the individual heat consumption was carried out. It was shown that average weighted error for determination of heat consumption by one apartment during the heating season does not exceed 6.5%.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 782-784
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anomalous Galvanomagnetic Effects in InSb Thin Films with Superconducting Lead Inclusions
    Autorzy:
    Mironov, O. A.
    Nashchekina, O. N.
    Oszwaldowski, M.
    Berus, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1928271.pdf
    Data publikacji:
    1993-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    74.50.+r
    Opis:
    We report on the first experimental observations of an anomalous increase in the resistance of a semiconductor-super conductor contact in the vicinity of the critical temperature T$\text{}_{c}$. The effect is found in lead-doped InSb thin films having inclusions of lead of 1-3 μm in diameter: The observed effect can be a model that explains similar resistance increase observed sometimes in the high T$\text{}_{c}$ superconductors.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 2; 227-230
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    SnTe Phase Transition in Strained Superlattices PbTe/SnTe
    Autorzy:
    Mironov, O. A.
    Makarovskii, O. N.
    Nashchekina, O. N.
    Shpakovskaya, L. P.
    Litvinov, V. I.
    Oszwałdowski, M.
    Berus, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933932.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    64.70.-p
    73.40.-c
    Opis:
    An anomaly of the in-plane conductivity is observed in the superlattices PbTe/SnTe on (001)KCl in the temperature region of 60-130 K. The anomaly is caused by a structural phase transition in SnTe layer and as a result, the transition induced formation of defects. These defects are additional scattering centres which decrease the superlattice conductivity.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 853-856
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds
    Autorzy:
    Dugaev, V. K.
    Litvinov, V. I.
    Petrov, P. P.
    Mironov, O. A.
    Nashchekina, O. N.
    Oszwałdowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923782.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.50.+t
    71.90.+q
    Opis:
    The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 797-800
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Role of a biased electrode in the production of highly charged ions using the DECRIS 14-3 ion source
    Autorzy:
    Leporis, M.
    Bogomolov, S.
    Efremov, A.
    Loginov, V.
    Mironov, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/148672.pdf
    Data publikacji:
    2003
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    ECR ion source
    plasma
    biased electrode
    Opis:
    ECR ion sources are used for the production of highly charged ions in various accelerator facilities. In most of them biased electrodes are normally used to increase the ion yield. Physical processes in the plasma of an ion source are quite complicated and the role of a biased electrode is not clear. To investigate the effect of a biased electrode on the intensity of extracted highly charged ions, an axially movable electrode was placed into the plasma chamber of the DECRIS 14-3 ion source. It was found that the intensity of Ar ions depends on the position of the biased electrode and negative bias voltage. The optimal position of the biased electrode was found near the maximum of the magnetic field. Experiments with a pulsed biased electrode were also carried out. The influence of the negative pulse on the ion yield depends on the ion charge state.
    Źródło:
    Nukleonika; 2003, 48,suppl.2; 89-92
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface
    Autorzy:
    Sadeghzadeh, M. A.
    Mironov, O. A.
    Emeleus, C. J.
    Parry, C. P.
    Phillips, P. J.
    Parker, E. H. C.
    Whall, T. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992074.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Fz
    Opis:
    We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si$\text{}_{0.8}$Ge$\text{}_{0.2}$ quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n$\text{}_{s}$ can be controlled, in the range of (1.5-5.2)×10$\text{}^{11}$ cm$\text{}^{-2}$. At a temperature T=0.33 K, the Hall mobility is 4650 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at the maximum carrier density. For lower sheet densities (n$\text{}_{s}$<2×10$\text{}^{11}$ cm$\text{}^{-2}$) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m$\text{}_{0}$ and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n$\text{}_{s}$=(5.2 → 2.5)×10$\text{}^{11}$ cm$\text{}^{-2}$. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n$\text{}_{s}$, short range interface charge and interface roughness scattering.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 503-508
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Progress in stellarator research at IPP-Kharkov
    Autorzy:
    Moiseenko, V. E.
    Lozin, O. V.
    Shapoval, A. M.
    Dreval, M. B.
    Kulyk, Y. S.
    Mironov, Y. K.
    Romanov, V. S.
    Pashnev, V. K.
    Sorokovoy, E. L.
    Petrushenya, A. A.
    Ozherel’ev, F. I.
    Kozulya, M. M.
    Konovalov, V. G.
    Maznichenko, S. M.
    Garkusha, I. E.
    Powiązania:
    https://bibliotekanauki.pl/articles/146173.pdf
    Data publikacji:
    2016
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    stellarator
    radio-frequency heating
    low frequency modes
    magnetic diagnostics
    Opis:
    A new antenna of ‘crankshaft’ type has been installed in the Uragan-2M device in order to increase the plasma density and heating below the ion cyclotron frequency. Antenna operation is modelled by 1D code, which solves boundary problem for time-harmonic Maxwell’s equations in radially non-uniform plasma cylinder. In recent experiments with this antenna, the SXR, CV, OV and OII emission measurements indicate that the light impurity radiation barrier is overcame at this device. Plasma with a temperature of ~50 eV exists during a short period of a few milliseconds. Then the radiation collapse comes owing to strong infl ux of impurities to the plasma column. A new magnetic diagnostics has been installed at Uragan-3M. Using it the poloidal magnetic fi eld is measured and the shift of toroidal current in major radius is registered. A miniature pinhole camera array for spatially and temporally resolved measurements of soft X-ray (SXR) plasma emission has been recently installed on the U-3M. Different shapes of the SXR emission profi le has been observed in different discharge conditions.
    Źródło:
    Nukleonika; 2016, 61, 2; 91-97
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anisotropic Microwave Absorption in High-T$\text{}_{c}$ like Semiconductor Superconducting Superlattices (001) PbTe-PbS
    Autorzy:
    Mironov, O. A.
    Makarovskii, O. N.
    Fedorenko, A. I.
    Sipatov, A. Yu.
    Nashchekina, O. N.
    Zaritskii, I. M.
    Konchits, A. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931192.pdf
    Data publikacji:
    1994-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    74.50.+r
    Opis:
    The anisotropic microwave absorption in the presence of alternative magnetic field has been studied for the first time in superconducting super-lattices based on PbTe-PbS, which are layered anisotropic systems similar to high T$\text{}_{c}$ superconductors. A new method of study has been used. The microwave response was detected under broad-band conditions and compared with the results of synchronous detection. All the features which have been observed in high T$\text{}_{c}$ materials are clearly seen here.
    Źródło:
    Acta Physica Polonica A; 1994, 85, 3; 603-606
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Superconductivity of Non-Strained PbTe-PbS and Strained PbTe-SnTe Superlattices
    Autorzy:
    Mironov, O. A.
    Chistyakov, S. V.
    Fedorenko, A. I.
    Shpakovskaya, L. P.
    Sipatov, A. Yu.
    Savitskii, B. A.
    Nashchekina, O. N.
    Oszwałdowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1890800.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.-c
    73.60.Fw
    74.60.-w
    Opis:
    A comparative study of structural and superconductive properties of semi conductor epitaxial superlattices PbTe-SnTe and PbTe-PbS grown on (001) KCl has been carried out. It has been found that the superconductivity of the PbTe-SnTe superlattices is caused by the stretching strain in the SnTe layers and it may be connected with the relative positions of L$\text{}_{8}^{+}$ and L$\text{}_{6}^{+}$ terms of PbTe and SnTe, respectively in the heterojunction. In contrast to the PbTe-SnTe superlattices, the superconductivity of the PbTe-PbS super lattices is found to be associated with regular misfit dislocation grids which are generated at the interfaces.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 329-332
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
    Autorzy:
    Durov, S.
    Mironov, O. A.
    Myronov, M.
    Whall, T. E.
    Parker, E. H. C.
    Hackbarth, T.
    Hoeck, G.
    Herzog, H. J.
    König, U.
    Känel von, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/958103.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    SiGe
    metamorphic MOSFET
    LF-noise
    I-V
    C-V
    effective hole mobility
    Opis:
    Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 101-111
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

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