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Wyświetlanie 1-15 z 38
Tytuł:
Current-Voltage Characteristic of Semi-Insulating GaAs, with Trap-Filling Effect
Autorzy:
Karpińska, K.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1886537.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
Opis:
A detailed investigation of current-voltage (I- V)characteristics of semi-insulating GaAs sample was performed in the vicinity of room temperature. The sample with 300 K resistivity of 2 x 10$\text{}^{7}$ Ω cm was supplied with guard-ring electrodes which allowed the elimination of surface currents. The observed characteristics started with an ohmic part which was followed by a superlinear current on voltage dependence. At a threshold voltage V$\text{}_{th}$ which corresponds to the electric field of about 2 kV/cm the current increased abruptly by a few orders of magnitude. The value of V$\text{}_{th}$ increased with the temperature. It is proposed that the observed shape of the I-V curve is caused by the filling of the EL2 level with injected electrons heated by the electric field.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 281-285
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Coupling of Oscillatory Modes in Current Flow in Semi-Insulating GaAs
Autorzy:
Karpińska, K.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1891273.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
Spontaneous current oscillations in semi-insulating (SI) GaAs sample caused by high electric field domains nucleation were perturbed by modulated illumination. Coupling between domain and photocurrent oscillations leads to quasiperiodic and frequency-locked behaviour. The observed Arnol'd tongues structure follows the Farey tree ordering and agrees with predictions of the circle map theory. We also suggest a possible mechanism responsible for the coupling of the modes.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 425-428
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Temperature in Semi-Insulating GaAs for Low Electric Fields
Autorzy:
Zduniak, A.
Łusakowski, J.
Nowak, G.
Powiązania:
https://bibliotekanauki.pl/articles/1923732.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10$\text{}^{-13}$ cm$\text{}^{2}$ which agrees with literature data.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 777-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Field Induced Localization in Semiinsulating GaAs
Autorzy:
Łusakowski, J.
Merten, R.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920957.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Jv
72.15.Gd
72.20.Ht
Opis:
Conductivity experiments were carried out on samples of semiinsulating GaAs at liquid helium temperature in magnetic field up to 6 T. During the measurements the samples were persistently illuminated with infrared light which allowed to populate with electrons a part of shallow donor and conduction band states. Current-voltage characteristics showed an abrupt jump of the current at a threshold electric field which is interpreted as a result of impact ionization of electrons bound on shallow donors and in the tail of the bottom of the conduction band. The jump of the current decreases as the magnetic field increases and disappears for a sufficiently high magnetic field B$\text{}_{0}$. The value of B$\text{}_{0}$ grows with growing light intensity. These results are explained by magnetic-field induced localization of electrons on long-range fluctuations of the electrostatic potential. The localization transition was confirmed by the current dependence on temperature measured at different magnetic fields. A peak on these curves was observed. Its position coincides with the temperature above which impact ionization is not observed. A possible mechanism explaining appearance of the peak is presented.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 551-560
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fractal Dimensions from Chaotic Oscillations in Semi-Insulating GaAs
Autorzy:
Zduniak, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929673.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.+b
72.20.Ht
Opis:
Relaxation and domain current oscillations in undoped semi-insulating GaAs were observed at room temperature for a broad range of voltage applied to a sample. The oscillations were characterized by a reconstruction of an attractor of the system. An analysis of the attractor helped to discriminate between the two likes of oscillations. A transition from one like of oscillations to the other was connected with a chaotization of the current. A chaotic state of the system was analyzed by calculations of fractal dimensions D$\text{}_{q}$ for -0.6 < g < 40 and the f(α) function.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 575-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Autocorrelation Function and Mutual Information from Short Experimental Time Series
Autorzy:
Zduniak, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1932093.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.+b
Opis:
A nonlinear dynamics of self-generated current oscillations in semi-insulating GaAs was studied by the reconstruction of an attractor from a short (14500 points) time series. Two methods of choosing of a time constant (τ) for this reconstruction are compared. One of them assumes τ to be an argument of the first zero of the autocorrelation function and the other takes τ as an argument of the first minimum of the mutual information. It is shown that for periodic oscillations both methods are equivalent, but for chaotic ones only the mutual information gives a time constant which does not depend on a time series used for calculations.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 257-260
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductivity of Optically Excited Electrons in GaAs in Quantizing Magnetic Fields
Autorzy:
Łusakowski, J.
Grynberg, M.
Huant, S.
Powiązania:
https://bibliotekanauki.pl/articles/1876263.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Hy
72.20.Ht
Opis:
Magnetoconductivity (σ) measurements on an n-type molecular beam epitaxy grown epitaxial layer and on a bulk liquid encapsulated Czochralski grown undoped semi-insulating GaAs samples were performed for magnetic fields (B) up to 21 T at 4.2 K. To enable current measurements in a wide range of B both samples were permanently illuminated with a band-to-band light. It is shown that for sufficiently high magnetic fields σ(B) dependence is the same for both materials. This result underlines a role of scattering by long-range fluctuations of the electrostatic potential in high-quality n-GaAs in quantizing magnetic fields.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 482-486
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Structural Properties of Ohmic Contacts to n-Type and High Resistivity CdTe
Autorzy:
Kamińska, E.
Piotrowska, A.
Guziewicz, M.
Gierlotka, S.
Papis, E.
Łusakowski, J.
Szadkowski, K.
Kwiatkowski, S.
Dietl, T.
Grabecki, G.
Jaroszyński, J.
Karczewski, G.
Zakrzewski, A. K.
Powiązania:
https://bibliotekanauki.pl/articles/1873052.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
The interaction between CdTe and In during the formation of an ohmic contact has been investigated. Emphasis is placed on the study of the effect of thermally induced sublimation of cadmium on electrical properties of contacts. Presented results prove the effectiveness of cap annealing and rapid thermal processing in fabrication of improved ohmic contacts with limited Cd losses during the contacting procedure.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 411-414
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
Autorzy:
Wysmołek, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1932094.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
72.20.Ht
Opis:
Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 261-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Is the Magnetism of HgSe:Fe Clearly Understood?
Autorzy:
Dybko, K.
Łusakowski, A.
Kossut, J.
Arciszewska, M.
vd Linden, P. J. E. M.
Wittlin, A.
Perenboom, J. A. A. J.
Mycielski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1931952.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Hx
75.20.Hr
Opis:
The high magnetic field magnetization measurements of low composition Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se (0.0002 < x < 0.003) at temperatures ranging from 1.6 K to 40 K and in magnetic fields up to 20 T are reported. The magnetization in a sample containing only Fe$\text{}^{3+}$ ions (x = 0.0002) is described by the Brillouin function (j = 5/2). The magnetization in the sample codoped with Ga, containing only Fe$\text{}^{2+}$ is well described in the model of isolated Fe$\text{}^{2+}$ ions. The latter model takes into account the tetrahedral crystal field, the spin-orbit interaction and the Zeeman term. On the other hand, the magnetization of sample with both Fe$\text{}^{3+}$ and Fe$\text{}^{2+}$ present simultaneously (x = 0.003) is shown to be different from a simple additive superposition of the contributions due to Fe$\text{}^{3+}$ and Fe$\text{}^{2+}$ subsystems. The possible origin of this discrepancy is discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 193-196
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Non-Ohmic Conductivity of High Resistivity CdTe
Autorzy:
Łusakowski, J.
Szczytkowski, J.
Szadkowski, K.
Kamińska, E.
Piotrowska, A.
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1933850.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.-r
Opis:
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown layers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the current flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 803-806
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Interface-Induced Disorder on Classical and Quantum Conductivity of CdTe:IN Epitaxial Layers
Autorzy:
Łusakowski, J.
Karpierz, K.
Grynberg, M.
Karczewski, G.
Wojtowicz, T.
Contreras, S.
Callen, O.
Powiązania:
https://bibliotekanauki.pl/articles/1968369.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
73.61.Ga
Opis:
An influence of disorder originated from the substratelayer interface on electrical properties of CdTe:In layers was investigated by means of the Hall effect and magnetoresistance measurements at low temperatures. An estimation of a scattering rate due to interface-induced disorder is given. Characteristic features of a magnetic field dependence of magnetoresistance are explained by an influence of quantum interference of scattered electron waves both in the hopping and the free electron conductivity regimes.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 911-914
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Field Magnetization of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te
Autorzy:
Górska, M.
Anderson, J. R.
Wolters, C.
Łusakowski, A.
Story, T.
Gołacki, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1969093.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
Opis:
The magnetization of p-type Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te with x up to 0.045 and the hole concentration, p, varying from 2.7 to 8.3×10$\text{}^{20}$ cm$\text{}^{-3}$ has been measured in magnetic fields up to 27 T, at the temperatures 4.2 and 1.3 K. The data were fitted to a magnetization equation with single-ion and pair terms. From comparison of the exchange parameters determined from the high-field magnetization with those previously obtained from the high-temperature magnetic susceptibility it was found that in samples with p>5×10$\text{}^{20}$ cm$\text{}^{-3}$ the exchange was of a short-range type, while in samples with a lower carrier concentration the long-range exchange mechanism was observed.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 347-350
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation
Autorzy:
Łusakowski, J.
Knap, W.
Kamińska, E.
Piotrowska, A.
Gavrilenko, V.
Powiązania:
https://bibliotekanauki.pl/articles/2035755.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.30.+q
73.61.Ey
Opis:
Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 545-551
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Specific Heat of Pb$\text{}_{1-x}$Eu$\text{}_{x}$Te
Autorzy:
Górska, M.
Łusakowski, A.
Jędrzejczak, A.
Gołacki, Z.
Anderson, J. R.
Balci, H.
Powiązania:
https://bibliotekanauki.pl/articles/2038143.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.-d
75.40.Cx
Opis:
The temperature dependence of the magnetic specific heat was studied experimentally and theoretically in the semimagnetic semiconductor Pb$\text{}_{1-x}$Eu$\text{}_{x}$Te for x=0.027 and x=0.073, over the temperature range from 0.5 K to 15 K, in magnetic fields up to 2 T. In zero magnetic field at about 2 K there was a broad maximum in the magnetic specific heat, which was much higher than that predicted by the model of superexchange interaction between nearest neighbors; the maximum values increased with magnetic field. The experimental data were analyzed in the framework of a model which takes into account the spin splitting of the ground state of a single Eu2+ ion in the presence of local lattice distortions in the Pb$\text{}_{1-x}$Eu$\text{}_{x}$Te mixed crystal. The model describes well the experimental data, especially for lower x-values, where the contribution from singlets dominates.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 631-636
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 38

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