Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Lusakowski, J." wg kryterium: Wszystkie pola


Tytuł:
Analysis of Chemical Disorder in $Pb_{1-x}Ge_{x}Te$
Autorzy:
Radzyński, T.
Łusakowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1811977.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.15.A-
61.43.-j
61.43.Bn
Opis:
The PbGeTe crystal lattice is locally deformed due to different ionic radii of cations and their random placement in the lattice. It is important to quantitatively characterize such microscopic disorder because local deformations have significant influence on the properties of magnetic ions introduced to such crystal. The simples method to study microscopic disorder is to consider purely classical model of the lattice in which neighboring atoms are connected by springs with properly chosen spring constant and equilibrium lengths. In the present work, using ab initio methods we discuss applicability of the springs-atoms model to the real crystal. We also explain results of extended X-ray absorption fine structure experiments performed on PbGeTe mixed crystals.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1317-1322
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Autocorrelation Function and Mutual Information from Short Experimental Time Series
Autorzy:
Zduniak, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1932093.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.+b
Opis:
A nonlinear dynamics of self-generated current oscillations in semi-insulating GaAs was studied by the reconstruction of an attractor from a short (14500 points) time series. Two methods of choosing of a time constant (τ) for this reconstruction are compared. One of them assumes τ to be an argument of the first zero of the autocorrelation function and the other takes τ as an argument of the first minimum of the mutual information. It is shown that for periodic oscillations both methods are equivalent, but for chaotic ones only the mutual information gives a time constant which does not depend on a time series used for calculations.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 257-260
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductivity of Optically Excited Electrons in GaAs in Quantizing Magnetic Fields
Autorzy:
Łusakowski, J.
Grynberg, M.
Huant, S.
Powiązania:
https://bibliotekanauki.pl/articles/1876263.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Hy
72.20.Ht
Opis:
Magnetoconductivity (σ) measurements on an n-type molecular beam epitaxy grown epitaxial layer and on a bulk liquid encapsulated Czochralski grown undoped semi-insulating GaAs samples were performed for magnetic fields (B) up to 21 T at 4.2 K. To enable current measurements in a wide range of B both samples were permanently illuminated with a band-to-band light. It is shown that for sufficiently high magnetic fields σ(B) dependence is the same for both materials. This result underlines a role of scattering by long-range fluctuations of the electrostatic potential in high-quality n-GaAs in quantizing magnetic fields.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 482-486
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current-Voltage Characteristic of Semi-Insulating GaAs, with Trap-Filling Effect
Autorzy:
Karpińska, K.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1886537.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
Opis:
A detailed investigation of current-voltage (I- V)characteristics of semi-insulating GaAs sample was performed in the vicinity of room temperature. The sample with 300 K resistivity of 2 x 10$\text{}^{7}$ Ω cm was supplied with guard-ring electrodes which allowed the elimination of surface currents. The observed characteristics started with an ohmic part which was followed by a superlinear current on voltage dependence. At a threshold voltage V$\text{}_{th}$ which corresponds to the electric field of about 2 kV/cm the current increased abruptly by a few orders of magnitude. The value of V$\text{}_{th}$ increased with the temperature. It is proposed that the observed shape of the I-V curve is caused by the filling of the EL2 level with injected electrons heated by the electric field.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 281-285
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Structural Properties of Ohmic Contacts to n-Type and High Resistivity CdTe
Autorzy:
Kamińska, E.
Piotrowska, A.
Guziewicz, M.
Gierlotka, S.
Papis, E.
Łusakowski, J.
Szadkowski, K.
Kwiatkowski, S.
Dietl, T.
Grabecki, G.
Jaroszyński, J.
Karczewski, G.
Zakrzewski, A. K.
Powiązania:
https://bibliotekanauki.pl/articles/1873052.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
The interaction between CdTe and In during the formation of an ohmic contact has been investigated. Emphasis is placed on the study of the effect of thermally induced sublimation of cadmium on electrical properties of contacts. Presented results prove the effectiveness of cap annealing and rapid thermal processing in fabrication of improved ohmic contacts with limited Cd losses during the contacting procedure.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 411-414
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Temperature in Semi-Insulating GaAs for Low Electric Fields
Autorzy:
Zduniak, A.
Łusakowski, J.
Nowak, G.
Powiązania:
https://bibliotekanauki.pl/articles/1923732.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10$\text{}^{-13}$ cm$\text{}^{2}$ which agrees with literature data.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 777-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Binding Energy and Oscillator Strength in a Shallow Quantum Well in an External Magnetic Field
Autorzy:
Zięba, P.
Piętka, B.
Łusakowski, J.
Tralle, I.
Powiązania:
https://bibliotekanauki.pl/articles/1402589.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Ji
75.75.-c
73.21.Fg
62.20.-x
Opis:
We discuss the influence of an external magnetic field on the exciton energy and the exciton oscillator strength in the shallow quantum wells. We include into consideration the Coulomb attraction between electron and hole, which is rarely taken into account. We self-consistently solve the Schrödinger equation to compare the obtained results with the experimental values.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 237-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fractal Dimensions from Chaotic Oscillations in Semi-Insulating GaAs
Autorzy:
Zduniak, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929673.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.+b
72.20.Ht
Opis:
Relaxation and domain current oscillations in undoped semi-insulating GaAs were observed at room temperature for a broad range of voltage applied to a sample. The oscillations were characterized by a reconstruction of an attractor of the system. An analysis of the attractor helped to discriminate between the two likes of oscillations. A transition from one like of oscillations to the other was connected with a chaotization of the current. A chaotic state of the system was analyzed by calculations of fractal dimensions D$\text{}_{q}$ for -0.6 < g < 40 and the f(α) function.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 575-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Field Magnetization of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te
Autorzy:
Górska, M.
Anderson, J. R.
Wolters, C.
Łusakowski, A.
Story, T.
Gołacki, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1969093.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
Opis:
The magnetization of p-type Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te with x up to 0.045 and the hole concentration, p, varying from 2.7 to 8.3×10$\text{}^{20}$ cm$\text{}^{-3}$ has been measured in magnetic fields up to 27 T, at the temperatures 4.2 and 1.3 K. The data were fitted to a magnetization equation with single-ion and pair terms. From comparison of the exchange parameters determined from the high-field magnetization with those previously obtained from the high-temperature magnetic susceptibility it was found that in samples with p>5×10$\text{}^{20}$ cm$\text{}^{-3}$ the exchange was of a short-range type, while in samples with a lower carrier concentration the long-range exchange mechanism was observed.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 347-350
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors
Autorzy:
Boubanga-Tombet, S.
Nogajewski, K.
Teppe, F.
Knap, W.
Karpierz, K.
Łusakowski, J.
Grynberg, M.
Dyakonov, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791357.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
84.40.x
85.30.Tv
85.35.p
73.20.Mf
Opis:
Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 939-940
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
Autorzy:
Wysmołek, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1932094.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
72.20.Ht
Opis:
Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 261-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Interface-Induced Disorder on Classical and Quantum Conductivity of CdTe:IN Epitaxial Layers
Autorzy:
Łusakowski, J.
Karpierz, K.
Grynberg, M.
Karczewski, G.
Wojtowicz, T.
Contreras, S.
Callen, O.
Powiązania:
https://bibliotekanauki.pl/articles/1968369.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
73.61.Ga
Opis:
An influence of disorder originated from the substratelayer interface on electrical properties of CdTe:In layers was investigated by means of the Hall effect and magnetoresistance measurements at low temperatures. An estimation of a scattering rate due to interface-induced disorder is given. Characteristic features of a magnetic field dependence of magnetoresistance are explained by an influence of quantum interference of scattered electron waves both in the hopping and the free electron conductivity regimes.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 911-914
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Is the Magnetism of HgSe:Fe Clearly Understood?
Autorzy:
Dybko, K.
Łusakowski, A.
Kossut, J.
Arciszewska, M.
vd Linden, P. J. E. M.
Wittlin, A.
Perenboom, J. A. A. J.
Mycielski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1931952.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Hx
75.20.Hr
Opis:
The high magnetic field magnetization measurements of low composition Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se (0.0002 < x < 0.003) at temperatures ranging from 1.6 K to 40 K and in magnetic fields up to 20 T are reported. The magnetization in a sample containing only Fe$\text{}^{3+}$ ions (x = 0.0002) is described by the Brillouin function (j = 5/2). The magnetization in the sample codoped with Ga, containing only Fe$\text{}^{2+}$ is well described in the model of isolated Fe$\text{}^{2+}$ ions. The latter model takes into account the tetrahedral crystal field, the spin-orbit interaction and the Zeeman term. On the other hand, the magnetization of sample with both Fe$\text{}^{3+}$ and Fe$\text{}^{2+}$ present simultaneously (x = 0.003) is shown to be different from a simple additive superposition of the contributions due to Fe$\text{}^{3+}$ and Fe$\text{}^{2+}$ subsystems. The possible origin of this discrepancy is discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 193-196
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Local Electric In-Plane Potential Fluctuations in the CdTe/CdMgTe Based Multiple Quantum Wells
Autorzy:
Nogajewski, K.
Karpierz, K.
Łusakowski, J.
Grynberg, M.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811966.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.15.Rn
72.80.Ey
73.21.Fg
Opis:
Unusual features in the magnetophotoconductivity spectra registered under far infrared illumination of the CdTe/CdMgTe based multiple quantum wells, uniformly n-doped are presented. It is shown that each spectrum exhibits one or two peaks of non-symmetrical shape, with position of their maxima dependent on the voltage applied to the sample. The peaks, observed in the configuration of the crossed electric and magnetic fields, are strongly shifted by a relatively weak in-plane electric field - of the order of 10-50 V/cm. Two different approaches to explain the observed influence are presented. Both are based on a two-step process leading to the photoconductivity signal. The first approach assumes that only the process of photon absorption is influenced by the external fields, the second one assumes that only the process of phonon assisted electron transfer from the excited donor state into the conduction band is influenced by the external fields.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1259-1265
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-Frequency Raman Spectrum οf Bulk $Zn_{0.984}Co_{0.016}O$ Crystal
Autorzy:
Szuszkiewicz, W.
Łusakowski, A.
Morhange, J.
Gołacki, Z.
Arciszewska, M.
Brodowska, B.
Kanehisa, M.
Klepka, M.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1807848.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
78.30.Fs
Opis:
The influence of possible presence of $Co^{2+}$ ion pairs in a bulk $Zn_{1-x}Co_{x}O$ mixed crystal on the low-frequency part of the Raman spectrum is discussed. Two effects can be taken into account in the theoretical considerations when analyzing the energy level scheme corresponding to Co ions. The first is a local lattice deformation in the vicinity of $Co^{2+}$ ion due to a presence of the second ion, smaller than the host ZnO lattice cation. Such deformation creates a trigonal field, which can only slightly modify the energy levels of $Co^{2+}$ ion. The second effect, which results from an antiferromagnetic superexchange interaction between two $Co^{2+}$ ions is responsible for a new set of energy levels. The Raman data taken at low temperature on the sample corresponding to the composition x = 0.016 demonstrated the presence of two structures at about 6 $cm^{-1}$ and 13 $cm^{-1}$. These structures may be interpreted as electronic transitions between the ground state and the first excited state of a single $Co^{2+}$ ion in the substitution site of ZnO lattice and as a similar transition for $Co^{2+}$ ion pair, respectively.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 103-106
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies