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Wyświetlanie 1-10 z 38
Tytuł:
Physics of THz Field-Effect Transistors
Autorzy:
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1505463.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Mf
52.75.-d
Opis:
Field-effect transistors are nowadays considered as possible elements of THz detection and emission systems. Their THz performance is governed by excitations of two-dimensional plasma in the transistor channel. The paper discusses peculiarities of the photon-plasmon coupling mechanism in field-effect transistors and puts it in the perspective of classical investigation of plasma excitations in two-dimensional systems.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 114-116
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current-Voltage Characteristic of Semi-Insulating GaAs, with Trap-Filling Effect
Autorzy:
Karpińska, K.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1886537.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
Opis:
A detailed investigation of current-voltage (I- V)characteristics of semi-insulating GaAs sample was performed in the vicinity of room temperature. The sample with 300 K resistivity of 2 x 10$\text{}^{7}$ Ω cm was supplied with guard-ring electrodes which allowed the elimination of surface currents. The observed characteristics started with an ohmic part which was followed by a superlinear current on voltage dependence. At a threshold voltage V$\text{}_{th}$ which corresponds to the electric field of about 2 kV/cm the current increased abruptly by a few orders of magnitude. The value of V$\text{}_{th}$ increased with the temperature. It is proposed that the observed shape of the I-V curve is caused by the filling of the EL2 level with injected electrons heated by the electric field.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 281-285
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Coupling of Oscillatory Modes in Current Flow in Semi-Insulating GaAs
Autorzy:
Karpińska, K.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1891273.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
Spontaneous current oscillations in semi-insulating (SI) GaAs sample caused by high electric field domains nucleation were perturbed by modulated illumination. Coupling between domain and photocurrent oscillations leads to quasiperiodic and frequency-locked behaviour. The observed Arnol'd tongues structure follows the Farey tree ordering and agrees with predictions of the circle map theory. We also suggest a possible mechanism responsible for the coupling of the modes.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 425-428
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
Autorzy:
Wysmołek, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1932094.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
72.20.Ht
Opis:
Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 261-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Autocorrelation Function and Mutual Information from Short Experimental Time Series
Autorzy:
Zduniak, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1932093.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.+b
Opis:
A nonlinear dynamics of self-generated current oscillations in semi-insulating GaAs was studied by the reconstruction of an attractor from a short (14500 points) time series. Two methods of choosing of a time constant (τ) for this reconstruction are compared. One of them assumes τ to be an argument of the first zero of the autocorrelation function and the other takes τ as an argument of the first minimum of the mutual information. It is shown that for periodic oscillations both methods are equivalent, but for chaotic ones only the mutual information gives a time constant which does not depend on a time series used for calculations.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 257-260
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fractal Dimensions from Chaotic Oscillations in Semi-Insulating GaAs
Autorzy:
Zduniak, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929673.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.+b
72.20.Ht
Opis:
Relaxation and domain current oscillations in undoped semi-insulating GaAs were observed at room temperature for a broad range of voltage applied to a sample. The oscillations were characterized by a reconstruction of an attractor of the system. An analysis of the attractor helped to discriminate between the two likes of oscillations. A transition from one like of oscillations to the other was connected with a chaotization of the current. A chaotic state of the system was analyzed by calculations of fractal dimensions D$\text{}_{q}$ for -0.6 < g < 40 and the f(α) function.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 575-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Metallic Pattern for Enhancement of a THz Field in a Two-Dimensional Electron Plasma
Autorzy:
Tarkowski, T.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1033104.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
Metamaterials
THz field enhancement
Opis:
A metamaterial in the form of a periodic lattice of split-ring resonators on a GaAs/AlGaAs heterostructure was numerically studied at terahertz frequencies. A finite-difference time-domain algorithm was applied to calculate distribution of the electromagnetic field in the layer positioned at 100 nm below the heterostructure surface where a two-dimensional electron gas typically resides in real structures. The results allowed to determine the resonant frequencies of the metamaterial as well as an enhancement factor of the electric field as a function of the period of the metamaterial's lattice.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 332-334
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Temperature in Semi-Insulating GaAs for Low Electric Fields
Autorzy:
Zduniak, A.
Łusakowski, J.
Nowak, G.
Powiązania:
https://bibliotekanauki.pl/articles/1923732.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10$\text{}^{-13}$ cm$\text{}^{2}$ which agrees with literature data.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 777-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductivity of Optically Excited Electrons in GaAs in Quantizing Magnetic Fields
Autorzy:
Łusakowski, J.
Grynberg, M.
Huant, S.
Powiązania:
https://bibliotekanauki.pl/articles/1876263.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Hy
72.20.Ht
Opis:
Magnetoconductivity (σ) measurements on an n-type molecular beam epitaxy grown epitaxial layer and on a bulk liquid encapsulated Czochralski grown undoped semi-insulating GaAs samples were performed for magnetic fields (B) up to 21 T at 4.2 K. To enable current measurements in a wide range of B both samples were permanently illuminated with a band-to-band light. It is shown that for sufficiently high magnetic fields σ(B) dependence is the same for both materials. This result underlines a role of scattering by long-range fluctuations of the electrostatic potential in high-quality n-GaAs in quantizing magnetic fields.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 482-486
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Field Induced Localization in Semiinsulating GaAs
Autorzy:
Łusakowski, J.
Merten, R.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920957.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Jv
72.15.Gd
72.20.Ht
Opis:
Conductivity experiments were carried out on samples of semiinsulating GaAs at liquid helium temperature in magnetic field up to 6 T. During the measurements the samples were persistently illuminated with infrared light which allowed to populate with electrons a part of shallow donor and conduction band states. Current-voltage characteristics showed an abrupt jump of the current at a threshold electric field which is interpreted as a result of impact ionization of electrons bound on shallow donors and in the tail of the bottom of the conduction band. The jump of the current decreases as the magnetic field increases and disappears for a sufficiently high magnetic field B$\text{}_{0}$. The value of B$\text{}_{0}$ grows with growing light intensity. These results are explained by magnetic-field induced localization of electrons on long-range fluctuations of the electrostatic potential. The localization transition was confirmed by the current dependence on temperature measured at different magnetic fields. A peak on these curves was observed. Its position coincides with the temperature above which impact ionization is not observed. A possible mechanism explaining appearance of the peak is presented.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 551-560
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-10 z 38

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