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Wyświetlanie 1-15 z 28
Tytuł:
A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations
Autorzy:
Dróżdż, P.
Korona, K.
Sarzyński, M.
Czernecki, R.
Skierbiszewski, C.
Muzioł, G.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1185815.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.22.-f
78.47.jd
Opis:
The potential fluctuations in III-nitride quantum wells lead to many effects like emission broadening and S-shape energy vs. temperature dependence. The best description of the energy dependence comes from calculations based on Gaussian density of states. However, in most of the published reports, changes of carrier lifetime with energy and temperature are not taken into account. Since experimental evidence shows that lifetime significantly depends on energy and temperature, here we propose a model that describes two basic parameters of luminescence: lifetime of carries and emission energy as a function of temperature in the case of quantum wells and layers that are characterized by potential fluctuations. Comparison of the measured energy and lifetime dependences on temperature in specially grown InGaN/GaN quantum wells and InAlGaN layer shows very good agreement with the proposed theoretical approach.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1209-1212
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anharmonic Optical Phonon Effects in ZnO Nanocrystals
Autorzy:
Khusnutdinov, S. V.
Dynowska, E.
Zaleszczyk, W.
Makhniy, V. P.
Wysmołek, A.
Korona, K. P.
Powiązania:
https://bibliotekanauki.pl/articles/2048106.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
74.25.nd
63.20.kg
Opis:
Zinc oxide (ZnO) is a very promising material for optoelectrical devices operating at the short-wavelength end of the visible spectral range and at the near UV. The Raman scattering studies of ZnO heterolayers formed by isothermal annealing show sharp phonon lines. In addition to the A$\text{}_{1}$(TO), E$\text{}_{1}$(TO), E$\text{}_{2}^{H}$, and E$\text{}_{1}$(LO) one-phonon lines, we observed two-phonon lines identified as: E$\text{}_{2}^{H}$ - E$\text{}_{2}^{L}$, E$\text{}_{2}^{H}$ + E$\text{}_{2}^{L}$, and 2LO at 332, 541, and 1160 cm$\text{}^{-1}$, respectively (at room temperature). The identification of the E$\text{}_{2}^{H}$ - E$\text{}_{2}^{L}$ peak was confirmed by its thermal dependence. Temperature dependent measurements in the range 6-300 K show that the phonon frequencies decrease with temperature. The E$\text{}_{2}^{H}$ peak is at energy 54.44 meV (439.1 cm$\text{}^{-1}$), at 4 K and due to phonon-phonon anharmonic interaction, its energy decreases to 54.33 meV (438.2 cm$\text{}^{-1}$) at room temperature. The Grüneisen parameter found for this oscillation mode was γ$\text{}_{E}$ 2H = 1.1 at about 300 K. The intensity of the E$\text{}_{2}^{H}$ - E$\text{}_{2}^{L}$ peak increases strongly with temperature and this dependence can be described by the Bose-Einstein statistics with activation energy of 13.8 meV (nearly equal to the energy of the E$\text{}_{2}^{L}$ phonon).
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 678-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Arsenic Antisite Defects Correlations in Low Temperature MBE GaAs
Autorzy:
Korona, K. P.
Powiązania:
https://bibliotekanauki.pl/articles/1933702.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Yg
73.61.Ey
Opis:
GaAs layers grown by molecular beam epitaxy at low temperatures (LT GaAs) have several interesting properties. For example, concentrations up to 2 × 10$\text{}^{20}$ cm$\text{}^{-3}$ of neutral and up to 5 × 10$\text{}^{18}$ cm$\text{}^{-3}$ of positively charged As$\text{}_{Ga}$defects have been determined in as grown layers. It has been observed that electrical transport in LT GaAs is dominated by hopping conductivity. In the as grown and annealed up to 400°C layers, experiments show a high mobility of photo-excited electrons up to 20000cm$\text{}^{2}$/(V s) at about 130 K. Taking into account the very high concentration of ionized defects in LT GaAs, the best possible explanation of the measured value of mobility is an assumption that As$\text{}_{Ga}^{+}$ defects interact with ionized acceptors A¯. This leads to creation of As$\text{}_{Ga}^{+}$-A¯ dipoles, which do not scatter electrons as efficiently as single ions. It has been shown that the donor-acceptor correlation could be destroyed by illumination whichv. Also analysis of hopping conductivity suggests the existence of the donor-acceptor correlations in non-illuminated LT GaAs. Numerical calculation of As$\text{}_{Ga}$-acceptors interaction has been done. It shows that at least below 200 K dipole formation in LT GaAs is possible and could lead to observed increase in mobility.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 643-653
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Badanie procesu transferu ładunku wzbudzanego światłem w organicznych ogniwach słonecznych za pomocą czasowo rozdzielczej fotoluminescencji i pobudzanego światłem elektronowego rezonansu spinowego
Detection of Photo-Induced Charge Transfer in Organic Solar Cells by Time-Resolved Photoluminescence and Light-Induced Electron Spin Reseonance
Autorzy:
Grankowska-Ciechanowicz, S.
Iwan, A.
Wołoś, A.
Korona, K. P.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/160166.pdf
Data publikacji:
2014
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
Tematy:
transfer ładunku
organiczne ogniwa słoneczne
czasowo rozdzielcza fotoluminescencja
pobudzany światłem elektronowy rezonans spinowy
charge transfer
organic solar cells
TRPL
(L)ESR
Opis:
Organiczne ogniwa słoneczne są jednym z obiecujących sposobów przetwarzania energii słonecznej w elektryczną. Procesem mającym decydujący wpływ na ich działanie, jest transfer ładunku wzbudzany światłem. Techniki pomiarowe, które znalazły zastosowanie do bezpośredniej detekcji tego procesu, to czasowo rozdzielcza fotoluminescencja (TRPL – ang. time-resolved photoluminescence) i pobudzany światłem elektronowy rezonans spinowy (LESR – ang. light-induced electron spin resonance). Efektywny transfer ładunku, przy pomocy TRPL, rejestrowany jest jako wygaszanie luminescencji w wyniku przestrzennego rozseparowania ładunków przeciwnego znaku, a za pomocą LESR jako dwie linie pochodzące od dodatniego polaronu po stronie donora i ujemnego polarnu po stronie akceptora. W niniejszej pracy omówione zostaną wymienione techniki pomiarowe oraz ich zastosowanie do detekcji efektywnego transferu ładunku w organicznych ogniwach słonecznych.
The organic solar cells are considered as promising way to convert solar energy into electricity. A crucial step in their operations is a photo-induced charge transfer (CT). Techniques, which directly detect this phenomenon, are Time-Resolved Photoluminescence (TRPL) and Light-induced Electron Spin Resonance (LESR). Effective photo-induced CT results in electrons and holes separation and creation of positive and negative polarons. First process is registered by TRPL as luminescence quenching, second by LESR as two lines, one from positive, and another from negative polarons. In this article, both techniques will be described as well their application in effective CT detection.
Źródło:
Prace Instytutu Elektrotechniki; 2014, 264; 65-71
0032-6216
Pojawia się w:
Prace Instytutu Elektrotechniki
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coupling of LO Phonons to Excitons in GaN
Autorzy:
Wysmołek, A.
Łomiak, P.
Baranowski, J. M.
Pakuła, K.
Stępniewski, R.
Korona, K. P.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1952430.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
63.20.Mt
71.55.Eq
Opis:
The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 981-984
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Defects in Low-Temperature GaAs
Autorzy:
Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1923822.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire
Autorzy:
Śliwiński, A. A.
Korona, K. P.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952204.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.61.Ey
Opis:
The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 955-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Function Theory Calculations of Polaritons in GaN
Autorzy:
Korona, K. P.
Stępniewski, R. Stępniewski
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1968249.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.36.+c
Opis:
Properties of polaritons (free excitons coupled with photons of similar energy) in gallium nitride are investigated by performing calculations based on dielectric function theory including all three excitons A, B and C (characteristic for the wurtzite structure). Moreover the excited states of excitons have been taken into account by adding Elliott's components to dielectric function. Energies, polarizabilities and damping constants of excitons are determined. It is shown that due to inter-exciton interactions the B and C excitons are strongly damped. It is estimated that the characteristic time of B to A relaxation is t$\text{}_{BA}$=1 ps. The exciton C lifetime is estimated τ$\text{}_{C}$=0.2 ps.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 867-870
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System
Autorzy:
Korona, K. P.
Babiński, A.
Raymond, S.
Wasilewski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2046919.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
72.20.Jv
78.67.Hc
78.55.Cr
Opis:
We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 219-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots
Autorzy:
Ilczuk, E.
Korona, K. P.
Babiński, A.
Kuhl, J.
Powiązania:
https://bibliotekanauki.pl/articles/2028722.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
78.47.+p
78.67.-n
Opis:
We present photocurrent and time-resolved photoluminescence investigations of AlGaAs/GaInAs/GaAs structures containing GaInAs/GaAs self-assembled quantum dots. The high electrical field in those devices significantly influences carrier dynamics. The photocurrent spectra show a double peak with maxima at 1.40 and 1.47 eV (at 80 K). These maxima are due to the GaInAs wetting layer (higher) and the quantum dots (lower). The photoluminescence spectra comprise weak excitonic luminescence from GaAs at 1.504 eV (at 80 K) and stronger and broad emission from the Ga$\text{}_{0.4}$In$\text{}_{0.6}$As quantum dots. At 300 K, the quantum dots emission has a lifetime of 1.1 ns and has a maximum at an energy of 1.38 eV. By analysis of both experiments, we can separate the influence of different radiative and nonradiative recombination processes. So, the tunneling rate: r$\text{}_{T}$=0.5 ns$\text{}^{-1}$ and the radiative recombination rate in the quantum dots: r$\text{}_{RQD}$=0.4 ns$\text{}^{-1}$ have been determined. The high tunneling probability (due to the influence of the built-in electric field) reveals that the tunneling effect is important for the recombination and transport processes in our structures.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 379-386
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
FFirst TSC and DLTS Measurements of Low Temperature GaAs
Autorzy:
Muszalski, J.
Babiński, A.
Korona, K. P.
Kamińska, E.
Piotrowska, A.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1891236.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 413-416
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Mn-Related Defect Band in InP
Autorzy:
Macieja, B.
Korona, K. P.
Piersa, M.
Witowski, A. M.
Wasik, D.
Wysmołek, A.
Strzelecka, G.
Hruban, A.
Surma, B.
Palczewska, M.
Kamińska, M.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2036033.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Ee
72.20.Jv
Opis:
Electron paramagnetic resonance, optical absorption, luminescence and electrical studies of InP highly doped with Mn were performed. Electron paramagnetic resonance revealed presence of manganese in Mn$\text{}^{2+}$(d$\text{}^{5}$) configuration. In optical absorption, systematic reduction of InP band gap was observed with increase in Mn content. This was correlated with increase in photoionization-type absorption band starting at 0.2 eV. Time-resolved photoluminescence measurements showed decrease in photoexcited carrier lifetime and shortening of donor-acceptor pair recombination time with increase in Mn content. Moreover, photoluminescence band was shifted to lower energies, similarly to optical band gap. In electrical transport two mechanisms of conductivity were observed. Valence band transport dominated at higher temperatures, above 160 K, and activation energy of free-hole concentration was determined as about 0.20 eV. At lower temperatures hopping conductivity, clearly related to Mn defect band, was present. All these results were consistent with assumption of creation of Mn-related defect-band at 0.2 eV above InP valence band. It was found that Mn centers responsible for this band were in configurations of either d$\text{}^{5}$ or d$\text{}^{5}$ plus a hole localized about 7Å around corresponding Mn core.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 637-642
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
Autorzy:
Bożek, R.
Korona, K. P.
Nowak, G.
Wasik, D.
Słupiński, T.
Kaczor, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929707.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.55.-m
78.20.Jq
Opis:
GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 669-672
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers
Autorzy:
Korona, K. P.
Borysiuk, J.
Skierbiszewski, C.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047384.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
72.20.Jv
78.55.Cr
Opis:
We present time-resolved photoluminescence measurements of GaN/AlGaN low dimensional structures showing very characteristic changes of dynamics related to strong electric field. Strong piezoelectric and spontaneous polarizations built-in in nitride structures lead to the changes in spatial separation of carriers which leads to changes in recombination energies and radiative lifetimes of the carriers. The observed effect can be well described by a simple exponential relation. The observed dependence can be explained by an approximated model of quantum-confined Stark effect based on the Airy functions.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 243-247
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InGaN QW in External Electric Field Controlled by Pumping of 2D-Electron Gas
Autorzy:
Korona, K.
Drabińska, A.
Surowiecka, K.
Wołowiec, L.
Borysiuk, J.
Caban, P.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1811946.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
78.55.Cr
72.40.+w
Opis:
We present investigations of GaInN/GaN/AlGaN structure containing cavity designed so that the electric field inside it can be changed by illumination. Numerical calculations show that illumination can change carrier distributions and consequently change the field and potential. The electric field influences properties of a quantum well placed in the cavity. We confirmed experimentally that the electric field controlled by external bias or by optical pumping, can change energy and occupation of electronic states in the quantum well. The quantum well energy could be changed of about 80 meV by voltage and 15 meV by illumination.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1179-1186
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 28

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