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Wyszukujesz frazę "Konig, J." wg kryterium: Wszystkie pola

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    Wyświetlanie 1-5 z 5
    Tytuł:
    Functional characterization of A. thaliana chloroplastic Prx II E
    Autorzy:
    Treffon, P.
    Konig, J.
    Dietz, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/79923.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    conference
    reactive oxygen species
    chloroplast
    plant cell
    peroxiredoxin
    Arabidopsis thaliana
    peroxidase activity
    functional characteristics
    Źródło:
    BioTechnologia. Journal of Biotechnology Computational Biology and Bionanotechnology; 2013, 94, 2
    0860-7796
    Pojawia się w:
    BioTechnologia. Journal of Biotechnology Computational Biology and Bionanotechnology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoemission Electronic States of Thallium- and Bismuth-Based Superconductors
    Autorzy:
    Zalecki, R.
    Kołodziejczyk, A.
    König, J. W.
    Gritzner, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/2014372.pdf
    Data publikacji:
    2000-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.72.-h
    79.60.-i
    Opis:
    X-ray photoemission spectra the core-levels as well as the X-ray photoemission spectra and ultraviolet photoemission spectra from the valence bands of the (Tl$\text{}_{0.6}$Pb$\text{}_{0.5}$)(Sr$\text{}_{0.9}$Ba$\text{}_{0.1}$) Ca$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{y}$ and (Bi$\text{}_{1.75}$Pb$\text{}_{0.35}$)Sr$\text{}_{1.9}$Ca$\text{}_{2.05}$Cu$\text{}_{3.05}$O$\text{}_{y}$ superconductors were measured and analyzed. Special attention was paid to the valence band X-ray photoemission spectra and ultraviolet photoemission spectra, the Cu 2p core-level X-ray photoemission spectra and the Cu L$\text{}_{2,3}$-M$\text{}_{4,5}$M$\text{}_{4,5}$ and O K-L$\text{}_{2,3}$L$\text{}_{2,3}$ Auger spectra. Both Cu 2p$\text{}_{3}\text{}_{/}\text{}_{2}$ and Cu 2p$\text{}_{1}\text{}_{/}\text{}_{2}$ core-level lines consisted of two spin-orbit split main lines accompanied with the two satellite lines. The charge transfer energy Δ from the oxygen ligand to the copper 3d$\text{}^{9}$ states and the hopping integral t were estimated from the energy separation between the main line and the satellite line taking advantage of the local cluster model calculations and their extension to high-temperature superconductors. The Coulomb correlation on-site energy U$\text{}_{dd}$ of two electrons in the same copper orbital and U$\text{}_{pp}$ of two electrons in the oxygen orbital as well as the correlation energy U$\text{}_{cd}$ of the 2p core hole - 3d electron interaction have been estimated from the Auger electron spectra and the valence band spectra. They are: U$\text{}_{dd}$=6.0±0.5eV, of U$\text{}_{pp}$≅ 10±1eV and of U$\text{}_{cd}$≅ 8.0±0.5eV nearly the same for both the Tl- and Bi-compounds. We conclude that these compounds are the charge transfer strongly-correlated metals.
    Źródło:
    Acta Physica Polonica A; 2000, 98, 5; 513-524
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Intelligent hybrid material slide component for machine tools
    Autorzy:
    Möhring, H. C.
    Wiederkehr, P.
    Baumann, J.
    König, A.
    Spieker, C.
    Müller, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/100179.pdf
    Data publikacji:
    2017
    Wydawca:
    Wrocławska Rada Federacji Stowarzyszeń Naukowo-Technicznych
    Tematy:
    process stability simulation
    thermal analysis
    machine tool
    Opis:
    In mid-scale and large five axis overhead gantry type milling machines, the vertical z-slide (ram) often constitutes one of the most sensitive and critical components regarding stiffness, structural vibrations and thermal influences. During machining, the z-slide is loaded by (quasi-) static process and drive forces, transient acceleration forces, periodic excitations by the tool engagement, as well as by thermal effects resulting from altering ambient conditions, heated chips, cooling lubricant and power losses in drives, guides and bearings. Deflections, thermal deformations and vibrations of the z-slide lead to geometric machining errors and inacceptable surface location errors at the workpieces. Furthermore, instable cutting conditions and regenerative chatter limit applicable material removal rates and, thus, productivity. In this work, a newly developed hybrid material structure for an exemplary z-slide, involving metal parts and mineral cast, is introduced. Structural optimization methods as well as process simulation techniques were applied in order to derive the final design solution. The integration of active cooling circuits for thermal stabilization is investigated and the use of fibre optical strain sensors is analysed with respect to a state monitoring of the machine tool component.
    Źródło:
    Journal of Machine Engineering; 2017, 17, 1; 17-30
    1895-7595
    2391-8071
    Pojawia się w:
    Journal of Machine Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optically Detected Magnetic Resonance of Excess Electrons in CdTe/(Cd,Mg)Te Quantum Wells
    Autorzy:
    Hu, C. Y.
    Ossau, W.
    Yakovlev, D. R.
    König, B.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969094.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    76.70.Hb
    71.35.-y
    71.35.Ji
    Opis:
    The spin resonance of excess electrons is observed with the detection either on the neutral or the negatively charged exciton X$\text{}^{-}$ emission in type I CdTe/(Cd,Mg)Te quantum wells with excess electrons of low density. It is found that the electron spin-dependent and electron spin-conserving formation and recombination of X$\text{}^{-}$ make the optical detection of the spin resonance of excess electrons feasible. For the first time, optically detected magnetic resonance is used to study fast optical transition processes in the nanosecond timescale where the microwave-induced magnetic transition rate is much lower than the optical transition rate.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 351-354
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
    Autorzy:
    Durov, S.
    Mironov, O. A.
    Myronov, M.
    Whall, T. E.
    Parker, E. H. C.
    Hackbarth, T.
    Hoeck, G.
    Herzog, H. J.
    König, U.
    Känel von, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/958103.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    SiGe
    metamorphic MOSFET
    LF-noise
    I-V
    C-V
    effective hole mobility
    Opis:
    Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 101-111
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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