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Wyszukujesz frazę "Indjin, D." wg kryterium: Wszystkie pola


Wyświetlanie 1-9 z 9
Tytuł:
Quantum Dots as Sources and Detectors οf Mid- and Far-Infrared Radiation: Theoretical Models
Autorzy:
Vukmirović, N.
Indjin, D.
Ikonić, Z.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791186.pdf
Data publikacji:
2009-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.67.Hc
73.63.Kv
85.60.Gz
85.35.Be
Opis:
We present a review of theoretical methods used to study the electronic structure, optical and transport properties of intraband optoelectronic devices based on self-assembled quantum dots.
Źródło:
Acta Physica Polonica A; 2009, 116, 4; 464-467
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers
Autorzy:
Mc Tavish, J.
Ikonić, Z.
Indjin, D.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1813212.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
73.63.Hs
Opis:
We report on the results of our simulations of Γ-X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ-X scattering), a double quantum well (to compare the Γ-X-G and Γ-Γ scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ-X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 891-902
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Transport in Quantum Cascade Lasers in Strong Magnetic Field
Autorzy:
Radovanović, J.
Milanović, V.
Indjin, D.
Ikonić, Z.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1505456.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We have developed a comprehensive rate equations based model for calculating the optical gain in the active region of a quantum cascade laser in magnetic field perpendicular to the structure layers, which takes into account all the relevant scattering channels. The model is applied to gain-optimized quantum cascade laser active region, obtained by a systematic optimization procedure based on the use of genetic algorithm, which we have previously set up for designing novel structures and improving performance of existing ones. It has proven to be very efficient in generating optimal structures which emit radiation at specified wavelengths corresponding to absorption fingerprints of particular harmful pollutants found in the atmosphere. We also illustrate another interesting prospective application of quantum cascade laser-type structures: the design of metamaterials with tunable complex permittivity, based on amplification via intersubband transitions. In this case, the role of the magnetic field is to assist the attainment of sufficient optical gain (population inversion), necessary to effectively manipulate the permittivity and fulfill the conditions for negative refraction (left-handedness).
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 99-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Cascade Laser Design for Tunable Output at Characteristic Wavelengths in the Mid-Infrared Spectral Range
Autorzy:
Daničić, A.
Radovanović, J.
Milanović, V.
Indjin, D.
Ikonić, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1537879.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We present a method for systematic optimization of quantum cascade laser active region, based on the use of the genetic algorithm. The method aims at obtaining a gain-maximized structure, designed to emit radiation at specified wavelengths suitable for direct absorption by pollutant gasses present in the ambient air. After the initial optimization stage, we introduce a strong external magnetic field to tune the laser output properties and to slightly modify the emission wavelength to match the absorption lines of additional compounds. The magnetic field is applied perpendicularly to the epitaxial layers, thus causing two-dimensional continuous energy subbands to split into series of discrete Landau levels. This affects all the relevant relaxation processes in the structure and consequently the lifetime of carriers in the upper laser level. Furthermore, strong effects of band nonparabolicity result in subtle changes of the lasing wavelength at magnetic fields which maximize the gain, thus providing a path for fine-tuning of the output radiation properties. Numerical results are presented for GaAs/$Al_{x}Ga_{1-x}As$ based quantum cascade laser structures designed to emit at particular wavelengths in the mid-infrared part of the spectrum.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 772-776
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inter-Landau Level Scattering Processes in Magnetic Field Assisted THz Quantum Cascade Laser
Autorzy:
Radovanović, J.
Daničić, A.
Milanović, V.
Indjin, D.
Ikonic, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1503186.pdf
Data publikacji:
2011-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We present a detailed analysis of GaAs/AlGaAs terahertz quantum cascade laser in the presence of an intense external magnetic field. One of the objectives in further development of THz quantum cascade laser is the realization of structures operating at higher temperatures. This is difficult to obtain as the operating photon emission energy is smaller than the longitudinal-optical phonon energy in the semiconductor material. With increased temperature, electrons in the upper radiative state gain sufficient in-plane energy to emit an longitudinal-optical phonon, which represents a non-radiative scattering and reduces the optical gain. By applying strong magnetic field, two-dimensional continuous energy subbands become split into series of discrete Landau levels, and at particular values of B it is possible to quench these non-radiative channels. Numerical simulations are performed on two-well design quantum cascade laser operating at 4.6 THz, implemented in GaAs/$Al_{0.15}Ga_{0.85}As$, and the magnetic field is perpendicular to the epitaxial layers. Strong oscillations of carrier lifetimes for the upper state of the laser transition, as a function of magnetic field are observed, which can be attributed to interface roughness scattering and longitudinal-optical phonon scattering between Landau levels.
Źródło:
Acta Physica Polonica A; 2011, 120, 2; 227-230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time Delay in Thin Slabs with Kerr-Type Nonlinearity
Autorzy:
Radovanović, J.
Milanović, V.
Isić, G.
Ikonić, Z.
Indjin, D.
Powiązania:
https://bibliotekanauki.pl/articles/2047864.pdf
Data publikacji:
2007-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.25.Bs
42.65.Hw
42.6.Tg
03.65.Xp
Opis:
In this paper we analyzed the following model: a thin slab with Kerr nonlinearity placed between two semi-infinite samples of linear and nonmagnetic materials. A general relation between the bidirectional group delay and the dwell time is derived for the thin slab. It is shown that the group delay is equal to the dwell time plus a self-interference delay. Particular attention is given to solving the Helmholtz equation for this case. Detailed and rigorous treatment revealed that the solutions of the Helmholtz equation are given via elliptic functions of the first kind. The boundary conditions at the interfaces are determined precisely. Finally, we provide an overall procedure for numerical calculation of the dwell times.
Źródło:
Acta Physica Polonica A; 2007, 112, 5; 987-992
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Precession of Quasi-Bound States in Heterostructures with Spin-Orbit Interaction
Autorzy:
Isić, G.
Indjin, D.
Ikonić, Z.
Milanović, V.
Radovanović, J.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791209.pdf
Data publikacji:
2009-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.Ej
73.20.At
73.21.Fg
Opis:
We use a finite-difference model that is capable of describing the single state spin dynamics in a double-barrier AlGaAs heterostructure. The use of Green's functions enables a description of the double-barrier structure by a finite matrix while the interaction with contacts is described by appropriate self-energies. To account for interface roughness scattering, a self-energy $Σp_{IR}$(E, k) is derived within the random phase approximation. The dominant part is due to in-plane momentum relaxation while a smaller part describing spin-flip scattering is neglected. The former only decreases the state lifetime while the latter can also affect the spin precession frequency.
Źródło:
Acta Physica Polonica A; 2009, 116, 4; 513-515
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Dynamics in Quantum Cascade Lasers
Autorzy:
Harrison, P.
Indjin, D.
Jovanović, V. D.
Mirčetić, A.
Ikonić, Z.
Kelsall, R. W.
McTavish, J.
Savić, I.
Vukmirović, N.
Milanović, V.
Powiązania:
https://bibliotekanauki.pl/articles/2041634.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.60.-v
Opis:
A fully quantum-mechanical model for carrier scattering transport in semiconductor intersubband devices was applied to modelling of carrier dynamics in quantum cascade lasers. The standard model uses the envelope function and effective mass approximations to solve electron band structure under an applied bias. The k·p model has been employed in p-type systems where the more complex band structure requires it. The resulting wave functions are then used to evaluate all relevant carrier-phonon, carrier-carrier and alloy scattering rates from each quantised state to all others within the same and the neighbouring period. This piece of information is then used to construct a rate equation for the equilibrium carrier density in each subband and this set of coupled rate equations are solved self-consistently to obtain the carrier density in each eigenstate. The latter is a fundamental description of the device and can be used to calculate the current density and gain as a function of the applied bias and temperature, which in turn yields the threshold current and expected temperature dependence of the device characteristics. A recent extension which includes a further iteration of an energy balance equation also yields the electron (or hole) temperature over the subbands. This paper will review the method and describe its application to mid-infrared and terahertz, GaAs, GaN, and SiGe cascade laser designs.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 75-81
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors
Autorzy:
Sherliker, B.
Halsall, M. P.
Harrison, P.
Jovanović, V. D.
Indjin, D.
Ikonić, Z.
Parbrook, P. J.
Whitehead, M. A.
Wang, T.
Buckle, P. D.
Phillips, J.
Carder, D.
Powiązania:
https://bibliotekanauki.pl/articles/2041680.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
Opis:
We report the growth and characterization of AlGaN/GaN multiple quantum well structures designed to have intersubband transitions in the mid-infrared region of the spectrum. The samples were nominally undoped but were found to contain a high electron population in the wells induced by the local polarization fields. The sample was characterized by the use of the Raman spectroscopy and photocurrent spectroscopy. The Raman spectroscopy shows electronic Raman scattering from intersubband transitions in the AlGaN/GaN quantum wells. The e$\text{}_{1}$-e$\text{}_{2}$ and e$\text{}_{1}$-e$\text{}_{3}$ transitions of the confined 2d electron population in the wells can clearly be observed. A sample designed to absorb at 4μm was fabricated into mesa structures and the vertical photocurrent measured under normal incidence illumination from the free-electron laser FELIX. A wavelength and bias dependent photocurrent was observed in the mid-IR region of spectrum. The peak responsivity was of the order of 50μA/W at 4 K, the photocurrent still being measurable at room temperature.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 174-178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-9 z 9

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