- Tytuł:
- DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing
- Autorzy:
-
Gelczuk, Ł.
Dąbrowska-Szata, M.
Pucicki, D. - Powiązania:
- https://bibliotekanauki.pl/articles/1195373.pdf
- Data publikacji:
- 2014-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
71.55.-i
73.61.Ey - Opis:
- Deep level transient spectroscopy was used to investigate deep-level defects in (Ga,In)(N,As)/GaAs triple quantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy with different indium and nitrogen contents and annealed in rapid thermal annealing system. A combination of electron traps that disappear or remain on annealing and a new hole trap that appears on annealing were detected. The revealed electron traps were attributed to N-related complexes or GaAs host-related native point defects. Moreover, it was suggested that the new hole trap observed in the annealed GaAsN/GaAs triple quantum well structure together with the dominant electron trap can act as generation-recombination center responsible for the observed a very poor optical quality among all the investigated multi-quantum well structures.
- Źródło:
-
Acta Physica Polonica A; 2014, 126, 5; 1195-1198
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł