- Tytuł:
- Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime
- Autorzy:
-
Osthaug, J.
Fjeldly, T.A.
Iniguez, B. - Powiązania:
- https://bibliotekanauki.pl/articles/308041.pdf
- Data publikacji:
- 2004
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
sub-100 nm MOSFET
two-dimensional device modeling
conformal mapping
threshold voltage
subthreshold regime
leakage current - Opis:
- Closed-form 2D modeling of deep-submicron and sub-100 nm MOSFETs is explored using a conformal mapping technique where the 2D Poisson equation in the depletion regions is separated into a 1D long-channel case and a 2D Laplace equation. The 1D solution defines the boundary potential values for the Laplacian, which in turn provides a 2D correction of the channel potential. The model has been tested for classical MOSFETs with gate lengths in the range 200-250 nm, and for a super-steep retrograde MOSFET with a gate length of 70 nm. With a minimal parameter set, the present modeling reproduces both qualitatively and quantitatively the experimental data obtained for such devices.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2004, 1; 70-79
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł