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Wyświetlanie 1-15 z 351
Tytuł:
Growth and Characterization of $YBa_2Cu_3O_{7-δ}$ Films Deposited by Laser Ablation on $CeO_2$-Buffered Sapphire
Autorzy:
Abal'osheva, I.
Zaytseva, I.
Aleszkiewicz, M.
Malinowski, A.
Bezusyy, V.
Syryanyy, Y.
Gierłowski, P.
Abal'oshev, O.
Kończykowski, M.
Cieplak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1374756.pdf
Data publikacji:
2014-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.78.-w
77.55.Px
81.15.Fg
Opis:
In this work we study the growth, by pulsed laser deposition, of $YBa_2Cu_3O_{7-δ}$ (YBCO) films on the $CeO_2$-buffered R-cut sapphire substrates, with the buffer layer recrystallized prior to the deposition of superconductor. We find that the superconducting critical temperature and the critical current density of the films are very close to similar parameters for the YBCO films grown on lattice-matched single crystalline substrates. It appears that the structural defects in the buffer layer affect the microstructure of YBCO films, resulting in high values of the critical current density, suitable for applications.
Źródło:
Acta Physica Polonica A; 2014, 126, 4a; A-69-A-72
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of the Superconducting Properties of Laser Ablated $YBa_2Cu_3O_{7-δ}$ Films on $CeO_2$-Buffered Sapphire
Autorzy:
Abal'osheva, I.
Zaytseva, I.
Aleszkiewicz, M.
Syryanyy, Y.
Gierłowski, P.
Abal'oshev, O.
Bezusyy, V.
Cieplak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1431267.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.78.-w
77.55.Px
81.15.Fg
Opis:
We use pulsed laser deposition to grow $YBa_2Cu_3O_{7-δ}$ (YBCO) superconducting films for microwave applications. The films are grown on R-cut sapphire substrates, with $CeO_2$ buffer layers, which are re-crystallized at high temperature prior to YBCO growth. Using the atomic force microscopy (AFM) and X-ray diffractometry we determine the optimal temperature for recrystallization (1000°C) and the optimal buffer layer thickness (30 nm). The properties of YBCO films of various thickness, grown on the optimized $CeO_2$ buffer layers, are studied using several methods, including AFM, magnetooptical imaging, and transport experiments. The YBCO film roughness is found to increase with the increasing film thickness, but the magnetic flux penetration in the superconducting state remains homogeneous. The superconducting parameters (the critical temperature and the critical current density) are somewhat lower than the similar parameters for YBCO films deposited on mono-crystalline substrates.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 805-807
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dichroism of Poly(Methyl Methacrylate) Thin Films Doped with Disperse Orange 11 Molecules
Autorzy:
Abbas, B.
Alshikh Khalil, M.
Powiązania:
https://bibliotekanauki.pl/articles/1808005.pdf
Data publikacji:
2009-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.55.+b
78.20.-e
78.66.Qn
Opis:
We investigate the absorption spectra of poly (methyl methacrylate) (PMMA) thin films doped with Disperse Orange 11 (DO11) dye molecules which change under illumination with visible light. Dichroism measurements of the kinetics of the transmission changes at 472 nm at room and low temperatures (-60° C ± 2 °C) have been investigated. Our data show that the photoisomerisation reaction and the light-induced polar orientation depend on the molecular structure of the polymer. Simultaneous UV-visible spectroscopy at low temperature confirms the existence of two forms of DO11 molecules (keto and enol forms), which are responsible for the interaction with irradiating laser light and forming an anisotropic structure inside the PMMA/DO11 thin film.
Źródło:
Acta Physica Polonica A; 2009, 115, 5; 857-863
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Dynamic Dichroism Properties of Disperse Orange 11 Molecules and Azo-Molecules Doped in Poly(Methyl Methacrylate) Thin Films: A Comparison
Autorzy:
Abbas, B.
Alshikh Khalil, M.
Powiązania:
https://bibliotekanauki.pl/articles/1537688.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.55.+b
78.20.e
78.66.Qn
Opis:
We investigate the dichroism characteristics of poly (methyl methacrylate) PMMA thin films doped with DO11, DO3, DSR13 and DSR1 dye molecules, which change under illumination with visible light. Our data show that photoisomerisation, phototautomerization reactions and light-induced polar orientation are dependent on the molecular structure of the polymer. Polar structure and molecular size, as well as the chemical structure of PMMA host, are the dominant parameters that determine both the extent and speed of dichroism buildup and relaxation processes. Two forms of DO11 molecules (keto and enol forms), and two other forms of azo-based dyes ( trans and cis forms) are responsible for the interaction with irradiating laser light and forming an anisotropic structure inside the PMMA/dye thin films.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 904-910
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Characterizations of~Ge Nanostructures Fabricated by~RF Magnetron Sputtering and Rapid Thermal Processing
Autorzy:
Abd Rahim, A.
Hashim, M.
Rusop, M.
Jumidali, M.
Powiązania:
https://bibliotekanauki.pl/articles/1490688.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.ag
68.60.Dv
61.46.Hk
78.67.Bf
61.05.C-
Opis:
In this work, we use a simple and cost effective technique of sputtering followed by the rapid thermal processing at 900C for 30 s to form Ge nanostructures on the Si(100) substrate. A layer of Ge (300 nm) and Si cap layer (100 nm) were deposited using RF magnetron sputtering. Two samples were prepared: Ge layer with Si capping (Si/Ge/Si) and Ge layer without Si capping (Ge/Si). Scanning electron microscopy shows that subsequent annealing in a rapid thermal processing gives uniformed Ge or SiGe islands with an estimated size of 100-500 nm. For the Ge/Si sample, under post growth annealing there had vanished the deposited Ge layer as confirmed by energy dispersive X-ray analysis. Atomic force microscopy shows that the surface roughness increases by a factor of 15.55% as the islands formed. The Raman spectrum shows that good crystalline structures of the Ge and SiGe peaks are produced. High resolution X-ray diffraction reveals cubic and tetragonal Ge phases with estimated average crystallite sizes of 42 nm and 20 nm, respectively. The results showed that it is possible to grow high quality Ge and SiGe nanostructures using a simple technique of sputtering for potential applications in photonics and high speed devices.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 16-19
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
Autorzy:
Alevli, M.
Ozgit, C.
Donmez, I.
Powiązania:
https://bibliotekanauki.pl/articles/1492662.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.66.Fd
78.55.Et
Opis:
In this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia $(NH_3)$ plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100C.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-058-A-060
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors
Autorzy:
Altarelli, M.
Powiązania:
https://bibliotekanauki.pl/articles/1931851.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.-a
78.70.Ck
Opis:
A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as surface structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 17-24
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Some Optical Aspects of Thermally Evaporated Lead Oxide Thin Films
Autorzy:
Aly, S.
Kaid, M.
El-Sayed, N.
Powiązania:
https://bibliotekanauki.pl/articles/1399301.pdf
Data publikacji:
2013-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.-g
81.15.-z
78.20.-e
78.20.Ci
78.40.-q
Opis:
The optical properties of lead oxide samples prepared using thermal evaporation technique on unheated glass substrates with different film thicknesses have been studied. The structural characteristics of a lead oxide sample was investigated using X-ray diffraction and it is confirmed to be in the amorphous state. The optical properties of the prepared films were studied by transmittance and reflectance measurements, and the integrated transmittance ($T_\text{UV}$, $T_\text{VIS}$ and $T_\text{Sol}$) in ultraviolet, visible and solar regions was calculated and found to be affected by film thickness. The dependence of absorption coefficient on wavelength was also reported. The energy gap was calculated and has been observed around 3.7 eV.
Źródło:
Acta Physica Polonica A; 2013, 124, 4; 713-716
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopic Investigation of Rare-Earth Doped Phosphate Glasses Containing Silver Nanoparticles
Autorzy:
Amjad, R.
Sahar, M.
Ghoshal, S.
Dousti, M.
Samavati, M.
Riaz, S.
Tahir, B.
Powiązania:
https://bibliotekanauki.pl/articles/1400152.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Ly
78.55.-m
78.66.Jg
Opis:
Phosphate glasses having compositions $(59.5-x)P_2O_5-40MgO-xAgCl-0.5Er_2O_3$, where x=0, 1.5 mol.% is prepared using melt-quenching technique. Infrared, absorption and photoluminescence spectra of $Er^{3+}$-doped magnesium phosphate glasses have been reported. The amorphous nature of the host glass is confirmed by X-ray diffraction technique. Transmission electron microscope image confirms the existence of silver nanoparticles inside the glass matrix. The localized surface plasmon resonance band of silver is found to be located around ≈ 528 nm for the $Er^{3+}$ free sample. A frequency upconversion process from infrared to visible is observed on excitation with 797 nm radiation. Furthermore, an enhancement in the emission at 540 nm and 632 nm is found due to the local field effect of silver nanoparticles. Our findings may contribute towards the development of solid state laser and sensors.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 746-749
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cavity-Polariton Effects in II-VI Microcavities
Autorzy:
André, R.
Boeuf, F.
Heger, D.
Dang, Le Si
Romestain, R.
Bleuse, J.
Müller, M.
Powiązania:
https://bibliotekanauki.pl/articles/2011103.pdf
Data publikacji:
1999-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.36.+c
42.55.Sa
78.66.-w
Opis:
Semiconductor microcavities are monolithic multilayer heterostructures grown by molecular beam epitaxy. They allow the confinement along the growth axis of both photons between the Bragg reflectors and excitons in quantum wells. If the exciton-photon coupling matrix element is large enough compared to the line width, the system is said to be in the strong coupling regime. In that case a quantum well exciton couples to another discrete state: the photon mode of a planar microcavity with the same in-plane wave vector, to give rise to quasi-stationary states named cavity polaritons. In this regime, the Fermi golden rule does not hold any more and the optical properties, linear or nonlinear, are strongly related to polariton features. A review of the optical properties of CdTe-based microcavities operating in the strong coupling regime is given in this paper. The strength of the exciton-photon coupling, dynamic optical properties, and relaxation processes along polariton dispersion curves will be discussed, as well as stimulated emission of cavity polariton luminescence.
Źródło:
Acta Physica Polonica A; 1999, 96, 5; 511-524
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
FIR Magnetooptical Measurements on MOCVD Grown InAs
Autorzy:
Andrearczyk, T.
Karpierz, K.
Bożek, R.
Stępniewski, R.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968009.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-m
71.55.-i
72.40.+w
Opis:
In this paper we report results of magnetooptical measurements done on standard InAs MOCVD layers grown on GaAs. Extremely narrow lines (half-widths of the order of 20 mT) - narrower than found by other authors in high quality MBE InAs epilayers on GaAs - as well as the lines of typical half-widths have been found both in the photoconductivity spectra and in the transmission spectra. A detailed comparison with the theoretical dependence of shallow donor and Landau level energies on magnetic field leads to the conclusion that they originate from cyclotron resonance and impurity-shifted cyclotron resonance transitions in that material.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 699-703
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis and Characterization of Gd₂O₂SO₄:Pr⁺³ Scintillation Material Produced by Sol-Gel Process for Digital Imaging System
Autorzy:
Aritman, I.
Yildirim, S.
Kisa, A.
Guleryuz, L.
Yurddaskal, M.
Dikici, T.
Celik, E.
Powiązania:
https://bibliotekanauki.pl/articles/1033327.pdf
Data publikacji:
2017-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
Opis:
Scintillation materials are widely used in digital X-ray imaging applications, radiotherapy applications coupled with suitable photoreceptors. Gd₂O₂SO₄ (GOS) scintillator doped with trivalent praseodymium (Pr⁺³) presented high X-ray absorption properties and good spectral compatibility which were utilized extensively for imaging system of X-ray microscopy, soft X-ray phosphor screen for water window. In this study, GOS:0.01Pr⁺³ scintillation material was synthesized by unique sol-gel process which was not previously applied and its characterization properties were investigated. Structure and luminescence properties of GOS:Pr⁺³ were optimized by utilizing X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and luminescence spectroscopy.
Źródło:
Acta Physica Polonica A; 2017, 131, 1; 106-108
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence Spectra of Quantum-Sized CdS and PbI$\text{}_{2}$ Particles in Static Electric Field
Autorzy:
Artemyev, M. V.
Yablonski, G. P.
Rakovich, Yu. P.
Powiązania:
https://bibliotekanauki.pl/articles/1877002.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.10.Jy
78.55.Hx
Opis:
The influence of external electric field was studied on the luminescence behavior of quantum-sized CdS and PbI$\text{}_{2}$ nanocrystals, embedded in various polymeric films. The clear increase in the photoluminescence intensity from the quantum-sized particles was observed, as well as the spectral shift of photoluminescence bands. The mechanism proposed is based on the field-induced oxygen desorption from the nanocrystal surface which is the good photoluminescence inhibitor.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 523-527
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and Optical Properties of Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ Highly Mismatched Alloy
Autorzy:
Avdonin, A.
Van Khoi, Le.
Pacuski, W.
Domukhovski, V.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/2047712.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Dk
61.72.Vv
78.55.-m
Opis:
The Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ alloy was prepared using a rapid crystallization technique. X-ray diffraction measurements were used to estimate the oxygen doping level. It is demonstrated that the oxygen solubility in Zn$\text{}_{1-x}$ Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ alloys greatly depends on the manganese concentration. No oxygen related effects were observed in the manganese free samples. The highest value of the oxygen molar fraction (y) achieved in the present study was 0.0023 in a sample having manganese fraction (x) of 0.056. The decrease in the alloy band gap was observed with increasing oxygen content. The oxygen-related trap level in Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$O$\text{}_{y}$ was found to be strongly shifted with respect to that in ZnTe$\text{}_{1-y}$O$\text{}_{y}$. The shift is assigned to a creation of complex (Mn$\text{}_{x}$O) traps.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 407-414
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer
Autorzy:
Babiński, A.
Czyż, M.
Golnik, A.
Borysiuk, J.
Kret, S.
Raymond, S.
Lapointe, J.
Wasilewski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1811914.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.55.Cr
78.67.Hc
Opis:
It has recently been shown that potential fluctuations in a wetting layer, which accompanies InAs/GaAs quantum dots can localize excitons. Neutral excitons and biexcitons and charged excitons were identified. In this communication we report on studies of properties of the excitons over wide temperature range (T < 70 K). The micro-photoluminescence measurements enable investigation of excitons localized in a single potential fluctuation. Temperature-induced broadening of the neutral exciton as well as a quenching of the charged exciton at temperatures higher than 50 K are observed and discussed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1055-1060
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 351

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