Wszystkie pola: 73.40.Cg - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites
Autorzy:: Vengalis, B.
Rosa, A. M.
Devenson, J.
Šliužienė, K.
Lisauskas, V.
Oginskis, A.
Anisimovas, F.
Pyragas, V.
Powiązania:: https://bibliotekanauki.pl/articles/2041760.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Cg
73.40.Lg
75.50.Dd
Opis:: High crystalline quality films of n-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$, p-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO$\text{}_{3}$(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ Mn O$\text{}_{3}$/La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 290-293
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: LSMO/YBCO heterostructures and investigation of "negative" resistance effect in the interface
Autorzy:: Sojková, M.
Nurgaliev, T.
Štrbík, V.
Chromik, Š.
Blagoev, B.
Španková, M.
Powiązania:: https://bibliotekanauki.pl/articles/1053094.pdf
Data publikacji:: 2017-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.-c
73.40.Cg
74.78.Fk
74.72.-h
75.50.Cc
Opis:: Samples containing the ferromagnetic manganite La_{0.67}Sr_{0.33}MnO₃ (LSMO) and high temperature superconducting YBa₂Cu₃O₇ (YBCO) single thin film areas and YBCO/LSMO bilayer area were prepared on LaAlO₃ (LAO) substrates and were used for investigation of the electrical properties of the interface. The measurements in the YBCO/LSMO interface demonstrated "negative" values of the resistance. A good interpretation of the obtained results was performed in the framework of a 1D model, which took into account the resistance of the interface R_{if} and the temperature dependence of the resistance of YBCO and LSMO films. It was shown that the effect of "negative" resistance arises because of the redistribution of the measuring electrical current in the interphase area if the resistance of the interface R_{if} is small in comparison with the resistances of the neighboring electrodes.
Źródło:: Acta Physica Polonica A; 2017, 131, 4; 842-844
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN
Autorzy:: Kamińska, E.
Piotrowska, A.
Jasiński, J.
Kozubowski, J.
Barcz, A.
Gołaszewska, K.
Bremser, M. D.
Davis, R. F.
Powiązania:: https://bibliotekanauki.pl/articles/1991549.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Cg
73.40.Ns
Opis:: The microstructure of Ni/Si-based contacts to GaN has been studied using transmission electron microscopy methods. The transition from non-ohmic to ohmic behavior appears to correlate with the initial limited reaction of GaN with Ni and further Si-Ni reaction-driven decomposition of the interfacial GaN-Ni phase.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 383-386
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Ohmic Contacts To GaN by Solid-Phase Regrowth
Autorzy:: Kamińska, E.
Piotrowska, A.
Barcz, A.
Ilka, L.
Guziewicz, M.
Kasjaniuk, S.
Dynowska, E.
Kwiatkowski, S.
Bremser, M. D.
Davis, R. F.
Powiązania:: https://bibliotekanauki.pl/articles/1968123.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Ns
73.40.Cg
Opis:: Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10$\text{}^{-3}$ Ωcm$\text{}^{2}$ and ≈1×10$\text{}^{-2}$ Ωcm$\text{}^{2}$ to GaN:Si (n ≈ 2×10$\text{}^{17}$ cm$\text{}^{-3}$) and GaN:Mg (p ≈ 3×10$\text{}^{17}$ cm$\text{}^{-3}$). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 819-823
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures
Autorzy:: Kalbarczyk, K.
Foltyn, M.
Grzybowski, M.
Stefanowicz, W.
Adhikari, R.
Li, Tian
Kruszka, R.
Kamińska, E.
Piotrowska, A.
Bonanni, A.
Dietl, T.
Sawicki, M.
Powiązania:: https://bibliotekanauki.pl/articles/1398574.pdf
Data publikacji:: 2016-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.25.Dc
73.40.Cg
73.43.Qt
78.55.Cr
Opis:: Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.
Źródło:: Acta Physica Polonica A; 2016, 130, 5; 1196-1198
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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