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Wyszukujesz frazę "68.35.Bs" wg kryterium: Wszystkie pola


Tytuł:
Observation of Nickel Hydroxide Layer on Ni Electrode by in situ Atomic Force Microscopy
Autorzy:
Kowal, A.
Niewiara, R.
Perończyk, B.
Haber, J.
Powiązania:
https://bibliotekanauki.pl/articles/1945263.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
Opis:
The layer of nickel hydroxide was formed on the surface of polycrystalline Ni immersed in 1 M KOH by cycling the potential in the range between -0.1 and 0.6 V vs. Pt in 1 M KOH. The layer thickness of 8.5 nm, estimated by an electrochemical method, corresponded to about 10 monolayers of Ni(OH)$\text{}_{2}$. The changes of thickness of the nickel hydroxide film during the process of its oxidation and reduction were monitored by the use of in situ atomic force microscopy with the tip fixed and the electrode potential scanned between -0.1 and +0.6 V at a scan rate of 100 mV/s. The process of oxidation resulted in the film thickness decrease by about 3 nm. This change could be explained as to be due to the removal of a proton from Ni(OH)$\text{}_{2}$ layer.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystallography of Boundaries and Interfaces
Autorzy:
Neumann, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945170.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Jk
68.35.Bs
Opis:
The main crystallographic concepts of characterizing interface structures are treated and reviewed. It will be demonstrated in which way the approaches of interface crystallography can be used to analyse interface structures experimentally observed.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 195-207
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reconstruction of the (001) Surface of Si from Molecular Dynamics
Autorzy:
Holender, J.
Jędrzejek, Cz.
Powiązania:
https://bibliotekanauki.pl/articles/1877536.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Md
68.35.Bs
Opis:
The reconstruction of the (001) surface of Si at various temperatures is studied using molecular dynamics with many-body interactions. Two types of potentials were used: the Stillinger-Weber (SW), and Pearson and co-workers Axilrod-Teller type potential (AT). For Stillinger-Weber potential at low temperatures the (2x1) dimer reconstruction is about 0.07 eV per surface atom more preferable than the c(2x2)structure which is in agreement with the experimental reconstruction observed by STM. Contrary, for Axilrod-Teller type potential the c(2x2) structure is lower by 0.2 eV than the (2x1) structure. The silicon surface is stable up to 1500 K, all the dimers remain unbroken but some of them are tilted. The energies of various defects (suggested by STM studies) like single vacancy, two adjacent Si atoms vacancy, dimer vacancy, dimer vacancy with lower layer atoms rebonding and double dimer vacancy are estimated.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 117-120
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures
Autorzy:
Kozhukhov, A. V.
Konarski, P.
Herman, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/1952035.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.Jk
Opis:
Depth profiling analysis of In$\text{}_{x}$Ga$\text{}_{1-x}$As heterolayers grown by MBE on Fe doped InP(100) substrates was performed in the SAJW-02 secondary ion mass spectrometry analyser equipped with 4.5 keV O$\text{}_{2}^{+}$ ion source and a specially designed sample manipulator enabling depth profiling in the standard as well as in so-called Zalar rotation operation modes. The fairly high energy of the primary ion beam required for sputtering in secondary ion mass spectrometry measurements causes changes in surface topography, usually of different origin. Depth resolution parameters and roughness formation monitored by scanning electron microscopy were analysed for a set of samples with composition x changing in the range 0.33 to 0.60. The results were compared with the same data for a layer of x=0.53 (best lattice-matched to InP) grown on the top of a three monolayer thick AlAs film deposited previously on the InP substrate. Improvement in the depth profile resolution was revealed for the structure with an AlAs layer indicating sharper interface transition. Moreover, sample rotation applied for this structure improves further the depth profiling resolution. Thus, we showed for the first time that a very thin AlAs layer grown by MBE between the InP substrate and the In$\text{}_{0.53}$Ga$\text{}_{0.47}$As improves considerably the heterointerface properties and that Zalar rotation applied for depth profiling of the investigated material system diminishes further the negative effects of ion etching on depth resolution in secondary ion mass spectrometry analysis.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 869-874
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reconstruction of Tungsten (111) and (211) Surfaces Induced by Carbon and Oxygen
Autorzy:
Szczudlo, Z.
Zuber, S.
Szczepkowicz, A.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2035646.pdf
Data publikacji:
2002-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
07.79.Cz
Opis:
Scanning tunneling microscopy is used to obtain images of reconstructed W(111) and W(211) surfaces. The reconstruction is induced by submonolayer coverages of carbon and oxygen.
Źródło:
Acta Physica Polonica A; 2002, 102, 6; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects in Detwinned LaGaO$\text{}_{3}$ Substrates
Autorzy:
Mazur, K.
Fink-Finowicki, J.
Berkowski, M.
Schell, N.
Powiązania:
https://bibliotekanauki.pl/articles/1964373.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
68.35.Bs
Opis:
Single crystals of lanthanum gallate would be the suitable substrate for YBaCuO films except for the phase transition and the tendency to twinning existing in this material. However, by appropriate choice of growth conditions in the Czochralski method, it is possible to grow single crystal of LaGaO$\text{}_{3}$ with low density of twin boundaries. Special stress and temperature treatment can then be applied to such materials to remove majority of existing twins. The substrates were examined by X-ray topography before and after detwinning and the surface was scanned with a profilometer.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 205-208
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions
Autorzy:
Auleytner, J.
Khrupa, V. I.
Datsenko, L. I.
Krasulya, S. M.
Skorokhod, M. J.
Powiązania:
https://bibliotekanauki.pl/articles/1945213.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
68.35.Bs
Opis:
Structure distortions appearing near the surfaces of crystals irradiated by high energy ions (H, Kr, U) accelerated till energy of several MeV using respectively the accelerator U-120 (Kiev, Ukraine), the heavy ions accelerators (Caen, France and Darmstadt, Germany) were investigated by means of various X-ray diffraction methods (topography and diffractometry). Nonhomogeneous distribution of lattice distortions near the surfaces of irradiated crystals were discovered using these methods in all of the samples. Besides the barrier zones where the accelerated ions stopped, the wide distorted regions situated nearer the surface were found. The fine structure of different zones, their extents as well as the level of static Debye-Waller factor were determined. The depth distribution of this factor was compared with the results obtained by using the edge contrast measurements some years ago. This permitted us to draw conclusions about some relaxation of elastic strains in the interference regions after many years.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 301-307
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recent Developments in Scanning Tunneling Microscopy
Autorzy:
Wiesendanger, R.
Powiązania:
https://bibliotekanauki.pl/articles/1929607.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.Bg
68.35.Bs
75.25.+z
Opis:
Scanning tunneling microscopy and related local probe methods have led to a novel perception of nanometer- and atomic-scale structures and processes. Since the structural information is obtained directly in real space, the scanning probe techniques offer considerable advantages compared with diffraction techniques for the investigation of non-periodic structures at solid surfaces. In addition, the local probe methods allow to study almost any kind of physical property of microstructures with submicron down to atomic resolution.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 419-421
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Roughness by X-ray and Neutron Scattering Methods
Autorzy:
Sinha, S. K.
Powiązania:
https://bibliotekanauki.pl/articles/1945176.pdf
Data publikacji:
1996-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Dp
68.35.Bs
78.20.Ci
Opis:
We discuss how the roughness and morphology of surfaces and interfaces can be characterized by the nondestructive techniques of X-ray and neutron scattering. We first discuss the mathematical description of rough surfaces in terms of correlation functions and then discuss the various kinds of rough surfaces which exist. These fall into the category of self-affine (Gaussian) surfaces, surfaces with capillary wave fluctuations, stepped surfaces, and surfaces with islands or pits. We then discuss how the scattering from such surfaces may be described and which types of information are available from specular reflectivity, off-specular (diffuse) scattering, and grazing incidence reflection experiments, including a comparison with results obtained by other surface techniques. We then discuss multiple rough interfaces and the scattering from thin films and multilayers. Finally, we shall discuss scattering of neutrons by magnetically rough surfaces and multilayers.
Źródło:
Acta Physica Polonica A; 1996, 89, 2; 219-234
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties and Photoemission of Microrelief Surfaces of III-V Semiconductors
Autorzy:
Dmitruk, N. L.
Mamikin, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/1931741.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
68.35.Bs
78.30.Fs
Opis:
The optical properties (infrared reflectance) and the photoemission current for the surface-barrier structures of metal-semiconductor type with microrelief interface have been investigated. The participation of surface plasmon polaritons in internal photoemission of the Au-GaAs Schottky barriers has been observed.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 811-815
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface of BiSrCaCuO Single Crystal Observed by Means of Scanning Tunneling Microscope
Autorzy:
Witek, A.
Reich, A.
Czajka, R.
Pajączkowska, A.
Rauluszkiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1891851.pdf
Data publikacji:
1991-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Vy
61.16.Di
68.35.Bs
Opis:
The topographic images of a Bi$\text{}_{0.7}$Pb$\text{}_{0.3}$SrCaCu$\text{}_{1.8}$O$\text{}_{x}$ single crystal were studied by means of the scanning tunneling microscope. The structure of terraces and steps seen on the surface reflects the crystallographic structure of bulk.
Źródło:
Acta Physica Polonica A; 1991, 80, 5; 717-722
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
STM/AFM Images and Tunneling Spectra of Nd$\text{}_{2-x}$Ce$\text{}_{x}$CuO$\text{}_{4-y}$ Single Crystals
Autorzy:
Susła, B.
Sadowski, W.
Klimczuk, T.
Czajka, R.
Powiązania:
https://bibliotekanauki.pl/articles/1964375.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.Ch
74.72.Jt
68.35.Bs
Opis:
The results of the scanning tunneling microscopy and spectroscopy as well as atomic force microscopy measurements on the Nd$\text{}_{2-x}$Ce$\text{}_{x}$CuO$\text{}_{4-y}$ single crystals in ambient conditions are reported. Using the scanning tunneling microscopy we were able to modify the Nd$\text{}_{2-x}$Ce$\text{}_{x}$CuO$\text{}_{4-y}$ ab-plane in air under the conditions of sample bias voltage V$\text{}_{t}$=500 mV and set current I$\text{}_{s}$=0.3 nA. It is possible to prepare atomically flat and clean surfaces as well as to create new structures in a nanometer scale in these electron-doped materials. The similar processes were not observed during atomic force microscopy imaging.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 209-214
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors
Autorzy:
Altarelli, M.
Powiązania:
https://bibliotekanauki.pl/articles/1931851.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.-a
78.70.Ck
Opis:
A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as surface structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 17-24
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Quality (100) and (001) Oriented Substrates Prepared from Czochralski Grown SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ Single Crystals
Autorzy:
Berkowski, M.
Fink-Finowicki, J.
Sass, J.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964370.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.50.Ks
68.35.Bs
Opis:
The growth of SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ crystals on ⟨100⟩ and ⟨001⟩ oriented seeds was investigated. Various defects, which appeared in crystals grown on these two orientations, were observed in polarized light and by X-ray diffraction topography. It was found that to obtain a substrate of the best quality, the crystal should be cut along the growth directions. Therefore, crystals pulled along ⟨100⟩ direction are utilized for preparation of (001) substrates, whereas (100) substrates are better to cut from crystals grown on ⟨001⟩ seed. The quality of the prepared substrates was determined by high resolution X-ray diffraction study in terms of rocking curve and mean mosaic angle.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 201-204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative Studies of Surface Roughness of Thin Epitaxial Si Films by Computer Simulations and Experimental X-Ray and Optical Methods
Autorzy:
Żymierska, D.
Auleytner, J.
Domagała, J.
Szewczyk, A.
Dmitruk, N.
Powiązania:
https://bibliotekanauki.pl/articles/1964181.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
68.35.Bs
61.10.Dp
Opis:
The paper presents investigations of the surface roughness of epitaxial silicon films obtained by chemical vapour deposition with chloric and MOCVD processes. The flat surfaces of films and chemically etched surfaces of substrates were studied by optical methods as well as by X-ray reflectivity at grazing incidence. The computer simulations based on Fresnel theory were compared with the experimental results.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1025-1030
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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