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    Wyświetlanie 1-11 z 11
    Tytuł:
    On the Frequency Domain Relaxation Processes in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
    Autorzy:
    Trzmiel, J.
    Płaczek-Popko, E.
    Zielony, E.
    Gumienny, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791364.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    61.72.jj
    77.22.-d
    Opis:
    The dielectric response of gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers was studied by impedance spectroscopy. Complex modulus and impedance spectroscopic plots were analyzed. Near ideal Debye response of CdTe:Ga was observed, whereas for $Cd_{0.99}Mn_{0.01}Te:Ga$ samples non-Debye behavior was stated. Different relaxation responses may be related to various local atomic configurations in the vicinity of the DX centers in the studied materials.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 956-958
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
    Autorzy:
    Trzmiel, J.
    Płaczek-Popko, E.
    Weron, K.
    Szatkowski, J.
    Wojtyna, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812001.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    61.72.jj
    78.20.Bh
    Opis:
    The low temperature non-exponential transients of photoconductivity build-up in gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of $Cd_{0.99}Mn_{0.01}Te:Ga$ the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1417-1420
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Point Defect Distributions in Tantalum
    Autorzy:
    Djaafri, A.
    Kadoun, A.
    Driss-Khodja, M.
    Elias, A.
    Djaafri, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1029821.pdf
    Data publikacji:
    2018-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Bg
    61.80.Ed
    61.72.jj
    61.72.jn
    Opis:
    We have investigated the point defect distributions in tantalum under irradiation by means of the Marlowe code based on the binary collision approximation. The study is carried out by simulating displacement cascades initiated with primary knock-on atom energies ranging from 5 to 20 keV. The Molière, Born-Mayer and average modified Lenz-Jensen potentials are used to describe the interactions between tantalum atoms. We have examined the creation of damage, the spatial defects distribution, and the vacancy clustering in tantalum. The results show that with an appropriate recombination radius, less than 16% of the created defects constitute permanent Frenkel pairs. Spatial configuration of defects indicates a separation between the two point defect types, vacancies and interstitials. The Molière potential favors the production of a greater number of displaced atoms and the development of voluminous cascades more than the other potentials. The cascade volume distributions deviate clearly from a Gaussian distribution. They are large and very stretched toward higher volumes for all used potentials. Only small vacancy clusters are formed in tantalum under irradiation and about 41% of the produced vacancies are considered as isolated
    Źródło:
    Acta Physica Polonica A; 2018, 133, 1; 39-44
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    LT-InGaAs Layer Grown for Near Surface SESAM Application
    Autorzy:
    Jasik, A.
    Muszalski, J.
    Kosmala, M.
    Pierściński, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807666.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.jj
    68.55.ag
    68.65.Ac
    81.15.Hi
    81.65.Rv
    Opis:
    We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-56-S-59
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots
    Autorzy:
    Miyamura, Y.
    Chen, J.
    Prakash, R.
    Jiptner, K.
    Harada, H.
    Sekiguchi, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1363535.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jj
    81.10.Fq
    61.72.Ff
    61.72.Hh
    61.72.Lk
    Opis:
    We have studied the dislocation generation and propagation from the seed crystals during seed cast Si growth. The grown ingot was cut into a vertical wafer, followed by the dislocation imaging using X-ray topography and Secco etching. The dislocation behavior at the seed area was compared with the dislocation generation at the top surface due to the thermal stress during cooling. The dislocations at the seed/crystal interface have propagated on the {111} plane toward top. When the seed surface was not melted sufficiently, the interface defect density became high, but no clear dislocation propagation was recognized. This suggests that the thermal shock at the seed/melt interface was not high enough to propagate dislocations to the growth direction. A certain amount of dislocations has been introduced from the top into the ingot according to the thermal stress. These observations suggest that optimizing the initial growth condition is important to dislocation control.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1024-1026
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of High Fluence Nitrogen Ion Implantation οn Pseudoelastic Behaviour of NiTi Shape Memory Alloy
    Autorzy:
    Levintant-Zayonts, N.
    Kucharski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503941.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.fg
    81.40.Jj
    61.72.U-
    61.72.-y
    Opis:
    An attempt to evaluate mechanical properties changes (superelastic phenomena) in the shape memory NiTi alloy (austenitic form) due to ion implantation ($N^{+}$, fluences of 1 × $10^{17}$ and 4 × $10^{18} cm^{-2}$) has been made. We applied the differential scanning calorimetry technique and spherical indentation (micro- and nanoindentation scale) test to study superelastic effect. The results of investigations of selected functional properties, i.e. characteristic temperatures, total and recovered penetration depth on the implanted and non-implanted NiTi samples are presented.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 79-82
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Local Pseudoelastic Behaviour and Surface Characteristics of N Ion Implanted NiTi Shape Memory Alloy
    Autorzy:
    Levintant-Zayonts, N.
    Kwiatkowski, L.
    Swiatek, Z.
    Brzozowska, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030131.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.fg
    81.40.Jj
    61.72.U-
    61.72.-y
    Opis:
    The main goal of the proposed paper is to present the results of the nitrogen ion implantation effects on mechanical and corrosion properties of NiTi shape memory alloy. Local pseudoelasticity phenomena of NiTi were determined using the ultra-low load applied system. The load-penetration depth curves show that lower nitrogen fluence improves mechanical properties in the near surface layer but higher ion fluence leads to degradation of pseudoelasticity properties. Corrosion resistance of NiTi in the Ringer solution was evaluated by means of electrochemical methods. The results of potentiodynamic measurements in the anodic range for implanted NiTi indicate a decrease of passive current density range in comparison with non-treated NiTi, without any signs related to Ni release. The results of impedance measurements recorded at the corrosion potential show a capacitive behaviour for all samples without clear predominance of one of them. It can be explained by the fact that this result concerns the first stage of corrosion exposition. It is shown that nitrogen ion implantation leads to formation of modified surface of improved physicochemical properties.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 210-216
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Macroscopic and Microscopic Descriptions of the Plastic Deformation of Fcc Metals over a Wide Range of Strain and Temperature
    Autorzy:
    Csanádi, T.
    Chinh, N.
    Gubicza, J.
    Langdon, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1419113.pdf
    Data publikacji:
    2012-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.66.Bi
    83.50.Uv
    65.40.-b
    81.40.Jj
    61.72.Cc
    Opis:
    The plastic behavior of face-centered cubic metals was investigated over a wide range of strain and testing temperature. The experimental stress-strain data were described using both macroscopic and microscopic, well-established relationships. The characteristics of these descriptions are discussed and compared with each other. The analysis of the characteristics leads to a definition of the low and high temperature deformation regions, where the kinetics of both the dislocation-multiplication and the dislocation-annihilation (recovery) are different. For pure aluminum, it is shown that the boundary between these two regions occurs at a homologous temperature of the order of $\approx 0.5 T_{m}$ where $T_{m}$ is the absolute melting temperature. From this analysis, correlations are also drawn between the macroscopic parameters describing the stress-strain relationship and the fundamental characteristics of the microscopic processes both at room temperature and elevated temperatures.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 3; 630-633
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process
    Autorzy:
    Tejero, A.
    Tupin, E.
    González, M.
    Martínez, O.
    Jiménez, J.
    Belouet, C.
    Baillis, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198416.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Am
    61.72.Ff
    88.40.jj
    Opis:
    In the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1006-1009
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Residual Strain and Electrical Activity of Defects in Multicrystalline Silicon Solar Cells
    Autorzy:
    Martínez, O.
    Mass, J.
    Tejero, A.
    Moralejo, B.
    Hortelano, V.
    González, M.
    Jiménez, J.
    Parra, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198419.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Am
    61.72.Ff
    88.40.jj
    Opis:
    The growth process by casting methods of multi-crystalline Si results in a crystalline material with, among other defects, a high density of dislocations and grain boundaries. Impurity incorporation and their gathering around grain boundaries and dislocations seem to be the main factor determining the electrical activity of those defects, which limit the minority carrier lifetime. In this work, we analyze multi-crystalline Si samples by combining etching processes to reveal the defects, Raman spectroscopy for strain measurements, and light beam induced current measurements for the localization of electrically active defects. In particular, we have explored the etching routes capable to reveal the main defects (grain boundaries and dislocation lines), while their electrical activity is studied by the light beam induced current technique. We further analyze the strain levels around these defects by Raman micro-spectroscopy, aiming to obtain a more general picture of the correlation between residual stress and electrical activity of the extended defects. The higher stress levels are observed around intra-grain defects associated with dislocation lines, rather than around the grain boundaries. On the other hand, the intra-grain defects are also observed to give dark light beam induced current contrast associated with a higher electrical activity of these defects as compared to the grain boundaries.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1013-1016
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers
    Autorzy:
    Kato, G.
    Tajima, M.
    Okayama, F.
    Tokumaru, S.
    Sato, R.
    Toyota, H.
    Ogura, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1382111.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Ap
    61.72.Qq
    82.80.Rt
    88.40.jj
    Opis:
    We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of $\text{}^16O¯$. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1010-1012
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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