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Wyszukujesz frazę "61.10.Eq" wg kryterium: Wszystkie pola

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Curved Surfaces in Disordered Carbons by High Energy X-ray Scattering
    Autorzy:
    Burian, A.
    Szczygielska, A.
    Kołoczek, J.
    Dore, J.
    Honkimaki, V.
    Duber, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030692.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.10.Eq
    61.46.+w
    Opis:
    Disordered carbons prepared by slow pyrolysis of saccharose and anthracene and subsequent heat treatment at 1000ºC and 2300ºC have been studied by high energy X-ray diffraction. Computer simulations of the powder diffraction patterns of fullerenes, nanotubes and carbon models have been compared with the experimental data after conversion to real space via the Fourier transform. The presence of fullerene- and nanotube-like fragments with non-six membered rings in the investigated samples has been deduced by detailed analysis of the radial distribution functions of the saccharose- and anthracene-based carbons and related to resistance to graphitization of the saccharose-based carbons and to stability of the growing crystallites in the case of the anthracene-based carbons. The obtained results are compared to high resolution electron microscopy and Raman studies.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 751-759
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Determination of Size Distribution of Guinier-Preston Zones in Al-Ag Alloys by Small-Angle X-ray Scattering Method
    Autorzy:
    Bierska, B.
    Pająk, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035487.pdf
    Data publikacji:
    2002-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.Eq
    81.40.Cd
    64.75.+g
    Opis:
    Small-angle X-ray scattering method recognised to be very useful in the studies of structural problems of materials inhomogeneous in nanoscale. Studies by small-angle X-ray scattering on the Al-Ag alloys are presented. The size distributions of spherical Guinier-Preston zones were calculated using Vonk's and Glatter's methods. Small-angle X-ray scattering studies were performed on Al-5.0 at.%Ag alloy containing spherical Guinier-Preston zones in theη-state. For this alloy one can assume that scattering particles are of spherical shape, have uniform electron density and scatter independently. Moreover, the size distributions were calculated for Al-1.6 at.%Ag alloy containing Guinier-Preston zones in ε-state (scattering particles with not uniform electron density). Both, Vonk's and Glatter's, methods gave similar size distributions. Profiles of size distributions for Guinier-Preston zones inε-state are more complex in comparison to Guinier-Preston zones inη-state. It is connected with a complex structure of Guinier-Preston zones in ε-state. A modification of the structure model of Guinier-Preston zones inε-state is proposed.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 2; 227-232
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Blue Optoelectronics in III-V Nitrides on Silicon
    Autorzy:
    Krost, A.
    Dadgar, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035573.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.Eq
    62.20.Mk
    81.15.Gh
    81.40.Np
    Opis:
    Three simple and promising methods to grow high-quality, device-relevant gallium nitride heterostructures on silicon are presented: strain-compensation, patterning, and the insertion of low-temperature AlN interlayers. With all methods device-quality GaN can be grown. While patterning is especially interesting for light emitters, low-temperature AlN interlayers can be used universally not only for transistor structures, which require good insulation of the active layers to the Si substrate, but also for vertically contacted LEDs when doped with Si. Low-temperature AlN interlayers do not only reduce tensile stress but also improve GaN properties and strongly reduce the threading dislocation density from 10$\text{}^{10}$ cm$\text{}^{-2}$ to 10$\text{}^{9}$ cm$\text{}^{-2}$ for 2 low-temperature AlN layers. Additionally, the layer quality can be enhanced by using in situ Si$\text{}_{x}$N$\text{}_{y}$ masks. Best crack-free layers with dislocation densities around 10$\text{}^{9}$ cm$\text{}^{-2}$ show X-ray rocking-curve widths around 400 arcsec and narrow photoluminescence. So far, best LEDs on Si(111) have an optical output power of 0.42 mW at 20 mA and 498 nm which is enough for simple signal applications.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 555-566
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dielectric and X-ray Studies of Eleventh and Twelfth Members of Two Isothiocyanato Mesogenic Compounds
    Autorzy:
    Jasiurkowska, M.
    Budziak, A.
    Czub, J.
    Urban, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047170.pdf
    Data publikacji:
    2006-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.Eq
    61.66.Hq
    64.70.Md
    77.22.-d
    77.22.Gm
    Opis:
    Results of the dielectric and X-ray studies of the long-alkyl-chain members (n=11, 12) of two homologous series: nBT (4-n-alkyl-4'-isothiocyanato-biphenyl) and nCHBT (4-trans-4'-n-alkyl-cyclohexyl-isothiocyanato-benzene) in their liquid crystalline phases are presented. These compounds exhibit different polymorphisms: the nematic phase for $n$CHBTs and the smectic E and smectic A phases for nBTs. The dielectric measurements were performed in a wide frequency range of 1 kHz-3 GHz. The layer thickness in the smectic E and smectic A phases and the orthorhombic unit cell parameters of the smectic E phase were determined using the small angle X-ray diffraction method. In the smectic E phase the layer-thickness-to-molecular-length ratios are found to be close to 1. The corresponding ratios observed for the smectic A phase of $n$BTs are considerably higher (≈1.24), which indicates that an alternating head-to-tail arrangement of molecules in the layers is favored. The rotational dynamics of molecules in the smectic E phases is discussed in relation to their packing in a unit cell.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 6; 795-805
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and Magnetic Properties of Nanocrystalline Fe-Mo Alloys Prepared by Mechanosynthesis
    Autorzy:
    Karolus, M.
    Jartych, E.
    Oleszak, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035497.pdf
    Data publikacji:
    2002-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.Eq
    07.85.Jy
    81.07.Bc
    81.07.Wx
    61.18.Fs
    87.64.Pj
    Opis:
    Nanocrystalline samples of Fe$\text{}_{80}$Mo$\text{}_{20}$ and Fe$\text{}_{50}$Mo$\text{}_{50}$ alloys were prepared by the mechanical milling method. The structure, lattice parameters, and crystallite size were determined by the X-ray diffraction. The magnetic properties of the milled products were determined by the M"ossbauer spectroscopy. It was observed that in the case of the Fe$\text{}_{80}$Mo$\text{}_{20}$ alloy a solid solution of Mo in Fe was formed with the lattice parameters of Fe increasing from 0.28659 nm to 0.29240 nm and the crystallite size decreasing from 250 nm to 20 nm. In the case of the Fe$\text{}_{50}$Mo$\text{}_{50}$ alloy there were no clear changes in values of the lattice parameters of Fe and Mo during the milling process, but the crystallite size decreased from 200 nm to 15 nm. Mössbauer spectra revealed different magnetic phases in the mechanosynthesized Fe-Mo samples. In the case of the Fe$\text{}_{80}$Mo$\text{}_{20}$ alloy, the spectrum for the milled mixture indicated the formation of a solid solution. In contrast, for the Fe$\text{}_{50}$Mo$\text{}_{50}$ the spectrum indicated the disappearance of the ferromagnetic phase.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 2; 253-258
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Growth Conditions and Doping on Physical Properties of Gallium Antimonide Single Crystals
    Autorzy:
    Mirowska, A.
    Orłowski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1409657.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Ea
    81.10.Fq
    81.10.-h
    81.10.St
    72.80.Ey
    71.55.Eq
    61.72.uj
    Opis:
    Gallium antimonide (GaSb) single crystals were grown by modified Czochralski method integrated with in situ synthesis in a flowing atmosphere of pure hydrogen. The influence of charge material purity as well as other technological parameters on GaSb crystals quality was investigated. High purity undoped GaSb single crystals were grown with residual acceptors concentration < 1.4 × $10^{17} cm^{-3}$ and high mobility ≈ 690 $cm^2$/Vs (at 300 K). P-type GaSb crystals were doped with silicon (carrier concentration up to 2 × $10^{19} cm^{-3}$) and with zinc (up to 1 × $10^{19} cm^{-3}$). Tellurium doped n-type GaSb single crystals were obtained with concentration up to 2 × $10^{18} cm^{-3}$. Electrical parameters were investigated by the Hall measurements (300 K and 77 K). Temperature dependent Hall measurements (10 ÷ 300 K) were used to compare the quality of undoped GaSb (obtained from Sb of different purity). Dopant concentration was estimated by glow discharge mass spectroscopy analysis. Axial and radial distribution of carrier concentration were investigated especially for Te-doped crystals (low segregation coefficient of Te in GaSb). Great contribution of compensation and self-compensation mechanisms is shown especially for the beginning part of grown crystals and for low Te-doping level. Radial distribution of physical properties for crystals grown in 〈100〉 direction is not axisymmetrical especially for doped GaSb crystals.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1111-1114
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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