Temat: ballistic transport - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: SOI nanodevices and materials for CMOS ULSI
Autorzy:: Palestra, F.
Powiązania:: https://bibliotekanauki.pl/articles/308998.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: ballistic transport
gate misalignment
GIFBE
mobility enhancement
SOI
strain engineering
tunneling current
Opis:: A review of recently explored new effects in SOI nanodevices and materials is given. Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are presented. The performance and physical mechanisms are also addressed in multi-gate Si, SiGe and Ge MOSFETs. The impact of gate misalignment or underlap, as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAMare also outlined.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 2; 3-13
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Rapid NEGF-based calculation of ballistic current in ultra-short DG MOSFETs for circuit simulation
Autorzy:: Hosenfeld, F.
Horst, F..
Graef, M.
Farokhnejad, A.
Kloes, A.
Iniguez, B.
Lime, F.
Powiązania:: https://bibliotekanauki.pl/articles/397995.pdf
Data publikacji:: 2016
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: ultra-short Double-Gate MOSFET
nonequilibrium Green's function
NEGF
ballistic transport
source-to-drain tunneling
ultra-thin body
UTB
compact model
multi-scale simulation
nierównowagowe funkcje Greena
transport balistyczny
tunelowanie źródło-dren
model kompaktowy
symulacja wieloskalowa
Opis:: Shrinking gate length in conventional MOSFETs leads to increasing short channel effects like source-to-drain (SD) tunneling. Compact modeling designers are challenged to model these quantum mechanical effects. The complexity lies in the set-up between time efficiency, physical model relation and analytical equations. Multi-scale simulation bridges the gap between compact models, its fast and efficient calculation of the device terminal voltages, and numerical device models which consider the effects of nanoscale devices. These numerical models iterate between Poisson- and Schroedinger equation which significantly slows down the simulation performance. The physicsbased consideration of quantum effects like the SD tunneling makes the non-equilibrium Green’s function (NEGF) to a stateof-the-art method for the simulation of devices in the sub 10 nm region. This work introduces a semi-analytical NEGF model for ultra-short DG MOSFETs. Applying the closed-form potential solution of a classical compact model, the model turns the NEGF from an iterative numerical solution into a straightforward calculation. The applied mathematical approximations speed up the calculation time of the 1D NEGF. The model results for the ballistic channel current in DG-MOSFETs are compared with numerical NanoMOS TCAD [1] simulation data. Shown is the accurate potential calculation as well as the good agreement of the current characteristic for temperatures down to 75 K for channel lengths from 6 nm to 20 nm and channel thickness from 1.5 nm to 3 nm.
Źródło:: International Journal of Microelectronics and Computer Science; 2016, 7, 2; 65-72
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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