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Wyszukujesz frazę "Prucnal, S." wg kryterium: Autor

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    Wyświetlanie 1-10 z 10
    Tytuł:
    Tailoring the Internal Evaporator for Effective Ion Beam Production - Volatile vs. Non-Volatile Substances
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Prucnal, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402239.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    Two different designs of the internal evaporator in an arc discharge ion source are presented, suitable either for volatile, or high-melting point substances. A matter of the evaporator size and placement in order to obtain its appropriate temperature and, therefore, a stable and intense ion beam, is considered. Basic ion source characteristics, i.e. the dependences of ion current and discharge voltage on the discharge and filament currents as well as on the external magnetic field flux density are shown and discussed in order to find optimal working conditions. The results of measurements for both volatile (P, Zn, Se, S) and non-volatile (Pd) are presented, showing the applicability of the design for ion implantation purposes.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 939-942
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication of $Si_{1-x}Ge_x$ Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing
    Autorzy:
    Gao, K.
    Prucnal, S.
    Mücklich, A.
    Skorupa, W.
    Zhou, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400450.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uf
    78.55.Ap
    68.37.Lp
    Opis:
    In our contribution we present the fabrication of $Si_{1-x}Ge_x$ alloy by ion-implantation and millisecond flash lamp annealing. The 100 keV Ge ions at the fluence of $10 \times 10^{16}, 5 \times 10^{16}$, and $3 \times 10^{16} cm^{-2}$ were implanted into monocrystalline (100)-oriented Si wafers covered by 50 nm thermal oxide. In the consequence, the 50 nm amorphous Ge rich Si layers were obtained. The recrystallization of the implanted layers and the $Si_{1-x}Ge_x$ alloying were accomplished by flash lamp annealing with the pulse duration of 20 ms. Flash lamp treatment at high energy densities leads to local melting of the Ge-rich silicon layer. Then the recrystallization takes place due to the millisecond range liquid phase epitaxy. Formation of the high quality monocrystalline $Si_{1-x}Ge_x$ layer was confirmed by the μ-Raman spectroscopy, the Rutherford backscattering channeling and cross-sectional transmission electron microscopy investigation. The μ-Raman spectra reveal three phonon modes located at around 293, 404, and $432 cm^{-1}$ corresponding to the Ge-Ge, Si-Ge and Si-Si in the $Si_{1-x}Ge_x$ alloy vibrational modes, respectively. Due to much higher carrier mobility in the $Si_{1-x}Ge_x$ layers than in silicon such system can be used for the fabrication of advanced microelectronic devices.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 858-861
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Production of $Mo^{+}$ Beams Using an Arc Discharge Ion Source
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Prucnal, S.
    Mączka, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1383005.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    A new method of $Mo^{+}$ ion beam production is presented in the paper. The method bases on the chemical sputtering/etching of the molybdenum parts (e.g. anode) of the arc discharge ion source by the chloride containing plasma. A mixture of $CCl_4$ (or $CHCl_3$) vapor and air was used as the feeding substance. The separated $Mo^{+}$ beam current of approximately 18 μA was achieved. The measurements of the ion current dependences on the discharge and filament currents as well as on the magnetic field flux density from the electromagnet surrounding the discharge chamber were performed in order to find the optimal working parameters of the ion source.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1388-1391
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Plasma Ion Source with an Internal Evaporator
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Prucnal, S.
    Mączka, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504137.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    A new construction of a hollow cathode ion source equipped with an internal evaporator heated by a spiral cathode filament and arc discharge is presented. The source is especially suitable for production of ions from solids. The proximity of arc discharge region and extraction opening enables production of intense ion beams even for very low discharge current ($I_{a}$ = 1.2 A). The currents of 50 μA $(Al^{+})$ and 70 μA $(Bi^{+})$ were obtained using the extraction voltage of 25 kV. The source is able to work for several tens of hours without maintenance breaks, giving possibility of high dose implantations. The paper presents the detailed description of the ion source as well as its experimental characteristics like dependences of extracted currents and anode voltage on anode and cathode currents.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 184-187
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing
    Autorzy:
    Prucnal, S.
    Shumann, T.
    Skorupa, W.
    Abendroth, B.
    Krockert, K.
    Möller, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503796.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jj
    78.55.-m
    78.30.Am
    78.55.Ap
    Opis:
    Phosphorus ion implantation was used for the emitter formation in mono- and multicrystalline silicon solar cells. After ion implantation the silicon is strongly disordered or amorphous within the ion range. Therefore subsequent annealing is required to remove the implantation damage and activate the doping element. Flash-lamp annealing offers here an alternative route for the emitter formation at overall low thermal budget. During flash-lamp annealing, only the wafer surface is heated homogeneously to very high temperatures at ms time scales, resulting in annealing of the implantation damage and electrical activation of phosphorus. However, variation of the pulse time also allows to modify the degree of annealing of the bulk region to some extent as well, which can have an influence on the gettering behaviour of metallic bulk impurities. The μ-Raman spectroscopy showed that the silicon surface is amorphous after ion implantation. It could be demonstrated that flash-lamp annealing at 800°C for 20 ms even without preheating is sufficient to recrystallize implanted silicon. The highest carrier concentration and efficiency as well as the lowest resistivity were obtained after annealing at 1200°C for 20 ms both for mono- and multicrystalline silicon wafers. Photoluminescence results point towards P-cluster formation at high annealing temperatures which affects metal impurity gettering within the emitter.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 30-34
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
    Autorzy:
    Prucnal, S.
    Turek, M.
    Gao, K.
    Zhou, S.
    Pyszniak, K.
    Droździel, A.
    Żuk, J.
    Skorupa, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400484.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.Hc
    81.05.Ea
    81.07.Ta
    81.15.Lm
    Opis:
    Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 935-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Filiks, J.
    Prucnal, S.
    Mączka, D.
    Vaganov, Yu.
    Węgierek, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033135.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    A new method of refractory metal (like Mo and Ta) ion beam production using the arc discharge ion source and CCl₂F₂ (dichlorodifluoromethane) used as a feeding gas supported into the discharge chamber is presented. It is based on etching of the refractory metal parts (e.g. anode or a dedicated tube) Cl and F containing plasma. The results of measurements of the dependences of ion currents on the working parameters like discharge and filament currents as well as on the magnetic field flux density of an external electromagnet coil are shown and discussed. The separated Mo⁺ and Ta⁺ beam currents of approximately 22 μA and 2 μA, respectively, were obtained.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 283-287
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide
    Autorzy:
    Rawski, M.
    Żuk, J.
    Kulik, M.
    Droździel, A.
    Lin, L.
    Prucnal, S.
    Pyszniak, K.
    Turek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504145.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    78.30.-j
    61.05.Np
    63.50.-x
    79.20.Rf
    81.70.Fy
    Opis:
    Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C $Al^{+}$ ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 192-195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of Optical and Electrical Properties of PET Foils by He⁺, Ne⁺ and Ar⁺ Implantation
    Autorzy:
    Droździel, A.
    Turek, M.
    Pyszniak, K.
    Prucnal, S.
    Luchowski, R.
    Grudziński, W.
    Klimek-Turek, A.
    Partyka, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033733.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Me
    78.30.Jw
    61.82.Pv
    Opis:
    Thin (3 μm) polyethylene terephthalate (PET) foils were irradiated with 135 keV He⁺, Ne⁺ and Ar⁺ ions with the fluences up to 5×10¹⁵ cm¯². Changes of chemical structure of the polymer were studied with the Fourier transform infrared and Raman spectroscopy - breaking of numerous chemical bonds, polymer chain cross-linking as well as formation of sp² hybridised carbon clusters and cluster networks were demonstrated. The increase of the implanted sample absorbance with the implantation fluence in the UV-VIS spectra as well as the decrease of optical band-gap energy (2.75 and 2.0 eV for He and Ne, respectively, at 5×10¹⁵ cm¯²) are observed. Decrease of bulk resistance of heavily treated samples by ≈5 orders of magnitude is determined. Measurements of the sheet resistance confirm that the sample becomes conducting also on the reverse (unimplanted) side of the foil. Both of these effects depend on the impinging ion mass - they are the strongest for Ar. The increase of both ac conductance and dielectric constant is observed in the frequency range up to 2 MHz and these changes rise with the impinging ion mass.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 264-269
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer
    Autorzy:
    Prucnal, S.
    Jiao, F.
    Reichel, D.
    Zhao, K.
    Cornelius, S.
    Turek, M.
    Pyszniak, K.
    Drozdziel, A.
    Skorupa, W.
    Helm, M.
    Zhou, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1199248.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jn
    61.72.Cc
    78.55.Hx
    Opis:
    Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1404-1407
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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