Autor: Lisauskas, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Dynamics of the Electric Field in a GaAs/AlGaAs Superlattice after Femtosecond Optical Excitation: Application of Time-Resolved Spectroscopic Techniques
Autorzy:: Lisauskas, A.
Blöser, C.
Sachs, R.
Roskos, H.
Juozapavičius, A.
Valušis, G.
Köhler, K.
Powiązania:: https://bibliotekanauki.pl/articles/1178281.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 03.65.Sq
78.47.+p
Opis:: We apply time-resolved photocurrent and differential electroreflectance spectroscopy to study the evolution of the internal field in a GaAs/AlGaAs superlattice after pulsed optical excitation at low temperature. The electric field dynamics is investigated by tracing the spectral position of the Wannier-Stark transitions as a function of delay time. We determine the electron sweep-out time, extract detailed information about the picosecond-time-scale drift of the charge carriers by comparing the measured data with the results of semi-classical self-consistent model calculations, and evaluate the two experimental techniques with respect to their ability to provide information about the carrier and field dynamics.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 250-255
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices
Autorzy:: Subačius, L.
Venckevičius, R.
Kašalynas, I.
Seliuta, D.
Valušis, G.
Schmidt, J.
Lisauskas, A.
Roskos, H.
Alekseev, K.
Köhler, K.
Powiązania:: https://bibliotekanauki.pl/articles/1505524.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.Cd
06.60.Jn
73.90.+f
Opis:: Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/$Al_{0.3}Ga_{0.7}As$ superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 167-169
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes
Autorzy:: Valušis, G.
Seliuta, D.
Tamošiūnas, V.
Širmulis, E.
Balakauskas, S.
Gradauskas, J.
Sužiedėlis, A.
Ašmontas, S.
Anbinderis, T.
Narkūnas, A.
Papsujeva, I.
Lisauskas, A.
Roskos, H. G.
Köhler, K.
Powiązania:: https://bibliotekanauki.pl/articles/2041684.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
85.30.De
72.30.+q
Opis:: We suggest a novel approach to detect broad band, 0.078-2.52 THz, electromagnetic radiation at room temperature using an asymmetrically-shaped bow-tie diode based on a modulation-doped GaAs/AlGaAs structure. We show that the voltage sensitivity in the range from 0.078 THz up to 0.8 THz has a plateau and its value is within 0.3-0.5 V/W. We consider the bow-tie diode design to increase the sensitivity of the device.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 184-187
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Magnetoresistive Properties of Manganite-Based Heterojunctions
Autorzy:: Devenson, J.
Vengalis, B.
Lisauskas, V.
Oginskis, A.
Anisimovas, F.
Ašmontas, S.
Powiązania:: https://bibliotekanauki.pl/articles/1807945.pdf
Data publikacji:: 2009-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.70.-i
71.30.+h
73.50.-h
Opis:: Hole-doped $La_{2/3}Ba_{1/3}MnO_{3}$ (LBaMO), $La_{2/3}Ca_{1/3}MnO_{3}$ (LCaMO) and $La_{2/3}Ce_{1/3}MnO_{3}$ (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb-doped $SrTiO_{3}(100)$ (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > U_d where U_d is the interfacial potential, corresponding to a steep current increase at a forward bias.
Źródło:: Acta Physica Polonica A; 2009, 115, 6; 1130-1132
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites
Autorzy:: Vengalis, B.
Rosa, A. M.
Devenson, J.
Šliužienė, K.
Lisauskas, V.
Oginskis, A.
Anisimovas, F.
Pyragas, V.
Powiązania:: https://bibliotekanauki.pl/articles/2041760.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Cg
73.40.Lg
75.50.Dd
Opis:: High crystalline quality films of n-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$, p-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO$\text{}_{3}$(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ Mn O$\text{}_{3}$/La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 290-293
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: The Surface Hydro-Oxidation of LaNiO$\text{}_{3-x}$ Thin Films
Autorzy:: Mickevičius, S.
Grebinskij, S.
Bondarenka, V.
Lisauskas, V.
Šliužienė, K.
Tvardauskas, H.
Vengalis, B.
Orłowski, B. A.
Osinniy, V.
Drube, W.
Powiązania:: https://bibliotekanauki.pl/articles/2047365.pdf
Data publikacji:: 2007-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Nr
29.20.Lq
Opis:: The high-energy X-ray photoelectron spectroscopy was used to determine the composition and chemical structure of epitaxial LaNiO$\text{}_{3-x}$ films obtained by a reactive dc magnetron sputtering. It was found that the oxide and hydroxide species of La and Ni are on the films surface. The thickness of hydroxide enriched layer, estimated from the oxide and hydroxide peak intensities, is about 2 nm.
Źródło:: Acta Physica Polonica A; 2007, 112, 1; 113-120
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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