Temat: impact ionization - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Development of diagnostic tools for Plasma Focus derived X-ray source
Autorzy:: Angeli, E.
Bonifazzi, C.
Da Re, A.
Marziani, M.
Tartari, A.
Frignani, M.
Mannucci, S.
Mostacci, D.
Rocchi, F.
Sumini, M.
Powiązania:: https://bibliotekanauki.pl/articles/147434.pdf
Data publikacji:: 2006
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: plasma focus
electron impact ionization
characteristic X-ray lines
bremsstrahlung
material heating
dosimetry
Opis:: The energy spectra of X-rays generated by the impact of electron beams on high- and medium-Z targets following the pinch implosion of Plasma Focus (PF) devices are discussed in terms of the possible mechanisms of X-ray production following electron impact ionization. In addition, the temperature measurement of the PF inner electrode is reported and some results have been proved useful in order to optimize the device functionalities.
Źródło:: Nukleonika; 2006, 51, 1; 15-20
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Impact Ionization Process in Deep Submicron MOSFET
Autorzy:: Speransky, D.
Borzdov, A.
Borzdov, V.
Powiązania:: https://bibliotekanauki.pl/articles/398035.pdf
Data publikacji:: 2012
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: MOSFET
metoda Monte Carlo
jonizacja zderzeniowa
energia progowa
Monte Carlo
impact ionization
threshold energy
Opis:: Within the framework of Keldysh impact ionization model the calculation of effective threshold energy for silicon MOSFET with 100 nm channel length by means of ensemble Monte-Carlo simulation is performed. The possibility of impact ionization rate treatment with one-parameter Keldysh model in pre-breakdown and breakdown transistor operation mode using calculated effective threshold energy value is proposed.
Źródło:: International Journal of Microelectronics and Computer Science; 2012, 3, 1; 21-24
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection
Autorzy:: Nazarov, A.N.
Houk, Y.
Kilchytska, V.I.
Powiązania:: https://bibliotekanauki.pl/articles/308027.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: Fowler-Nordheim current
trap-assisted tunneling
silicon-on-insulator
buried oxide
SIMOX
UNIBOND
anode hole injection
band-to-band impact ionization
Opis:: Mechanisms of the charge transfer, the charge trapping, and the generation of positive charge during the high-field electron injection into buried oxide of silicon-on-insulator structures fabricated by different technologies are analyzed based on the data obtained from current-voltage, injection current-time, and capacitance-voltage characteristics together with SIMS data. Electron injection both from the Si film and the Si substrate is considered. The possibility of using the trap-assisted electron tunneling mechanisms to explain the high-field charge transfer through the buried oxides of UNIBOND and SIMOX SOI materials is considered. It is shown that considerable positive charge is accumulated near the buried oxide/substrate interface independently from the direction of the injection (from the film or from the silicon substrate) for UNIBOND and SIMOX SOI structures. Thermal stability of the charge trapped in the buried oxides is studied at temperatures ranging from 20 to 400° C. The theory is compared with the experimental data to find out the mechanisms of the generation of positive charge in UNIBOND and SIMOX buried oxides.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 50-61
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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