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Wyświetlanie 1-15 z 17
Tytuł:
Detection and Recording of Acoustic Emission in Discrete IGBT Transistors
Autorzy:
Gordon, R.
Dreas, A.
Powiązania:
https://bibliotekanauki.pl/articles/2064954.pdf
Data publikacji:
2018
Wydawca:
STE GROUP
Tematy:
IGBT Modules
IGBT Transistor
Acoustic Emission
Opis:
The article presents the results of experimental research, which is to show a correlation between the change of operating status of single IGBT transistor and its acoustic emission. Sensor signal was obtained with oscilloscope in order to further process it digitally and determine possibility of the damage to the element based on registered acoustic signal.
Źródło:
Multidisciplinary Aspects of Production Engineering; 2018, 1, 1; 27--31
2545-2827
Pojawia się w:
Multidisciplinary Aspects of Production Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Complex fourier series mathematical model of a universal motor supplied by an igbt transistor
Model matematyczny silnika uniwersalnego zasilanego poprzez tranzystor IGBT przy wykorzystaniu zespolonych szeregów Fouriera
Autorzy:
Záskalický, P.
Kaňuch, J.
Powiązania:
https://bibliotekanauki.pl/articles/1369125.pdf
Data publikacji:
2012
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Napędów i Maszyn Elektrycznych Komel
Tematy:
model matematyczny
silnik uniwersalny
tranzystory IGBT
IGBT transistor
universal motor
mathematical models
Opis:
The present contribution shows an analytical method of the calculus of the torque ripple and current waveforms of a universal motor supplied by an IGBT chopper. The chopper output voltage waveform is formulated by the Fourier series. The armature reaction of the motor is included in the calculus. The motor performance is computed using the circuit parameters determined by measurements. The calculated current waveforms are compared with the measured ones.
Źródło:
Maszyny Elektryczne: zeszyty problemowe; 2012, 1, 94; 33-37
0239-3646
2084-5618
Pojawia się w:
Maszyny Elektryczne: zeszyty problemowe
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Impact of a Power Electronics Converter in Phase Failure Work on the Power System Network
Wpływ niepełnofazowej pracy energoelektronicznego przekształtnika sieciowego na system elektroenergetyczny
Autorzy:
Zieliński, D.
Przytuła, K.
Powiązania:
https://bibliotekanauki.pl/articles/397577.pdf
Data publikacji:
2016
Wydawca:
ENERGA
Tematy:
phase failure work
short circuit
IGBT protection system
VOC
NPC
praca niepełnofazowa
zwarcia
zabezpieczenia kluczy IGBT
Opis:
The paper presents the impact of phase failure work on power converters. The study includes a three-level NPC inverter (Neutral Point Clamped), controlled by Voltage Oriented Control (VOC). The NPC converter integrates renewable energy sources with the power grid. The article includes a discussion about the causes of phase failure work and an analysis of the converter’s failure and its impact on the power grid. The simulations were performed in MATLAB/Simulink. The study also includes the concept of an integrated protection for IGBTs, controlled by the DSP microprocessor system.
Artykuł przedstawia wpływ pracy niepełnofazowej na pracę przekształtnika energoelektronicznego. Do badań wykorzystano 3-poziomowy przekształtnik NPC (ang. Neutral Point Clamped), sterowany metodą napięciowo zorientowaną VOC (ang. Voltage Oriented Control). Przekształtnik ten pełni rolę sprzęgu, który integruje odnawialne źródła energii z siecią elektroenergetyczną. Artykuł zawiera omówienie przyczyn pracy niepełnofazowej oraz analizę wpływu awarii przekształtników na fragment sieci elektroenergetycznej. Symulacje przeprowadzono w środowisku MATLAB/Simulink. Badania obejmują również koncepcję zintegrowanego zabezpieczenia dla tranzystorów IGBT, sterowanego w układzie mikroprocesorowym DSP.
Źródło:
Acta Energetica; 2016, 3; 155-161
2300-3022
Pojawia się w:
Acta Energetica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Selection of 5 kW Converter Leg for Power Electronic System
Autorzy:
Zygmanowski, M.
Michalak, J.
Jeleń, M.
Jarek, G.
Powiązania:
https://bibliotekanauki.pl/articles/973060.pdf
Data publikacji:
2017
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
IGBT
Silicon Carbide (SiC)
MOSFET
Inverter
Microgrid
Opis:
Three converter leg variants are analyzed for low power converter used for power electronic system for residential buildings. The two-level Si-IGBT and SiC-MOSFET converters are compared with Si-IGBT three-level T-type converter. Power losses generated in each of these converters over a predicted period of 20 years of operation are contrasted with the cost of converter options. The detailed selection procedure for output inductor is presented in this paper. This procedure shows the influence of the inductor parameters like number of turns, air gap length on its losses, cost and size. Theoretical approach is verified with simulations and experimental results.
Źródło:
Measurement Automation Monitoring; 2017, 63, 8; 282-287
2450-2855
Pojawia się w:
Measurement Automation Monitoring
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs
Autorzy:
Górecki, K.
Górecki, P.
Powiązania:
https://bibliotekanauki.pl/articles/220969.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
IGBT
thermal resistance
measurements
transistor
semiconductor devices
Opis:
In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.
Źródło:
Metrology and Measurement Systems; 2015, 22, 3; 455-464
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of electro-thermal stress of IGBT devices
Autorzy:
Shaban, M. A.
Ettomi, Y.
Powiązania:
https://bibliotekanauki.pl/articles/377956.pdf
Data publikacji:
2013
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
electro-thermal stress
IGBT
Insulated Gate Bipolar Transistor
Opis:
The aim of this paper is to present a new approach which consists to correlate or coupled the functional and electrical stress with temperature. This approach can be extremely useful in the predicting the stressing effect and the impact of IXGH-IGBT I-V characteristics on circuit degradation. Moreover, this new approach significantly improves such parameters likes (threshold voltage Vth, collector saturation current, the stress and enhanced collector leakage current) and provides new capability for use this power device IXGH-IGBT in an actual circuit environment and modules. We also explain the physical reasons behind the improvement obtained using functional electrical stress on the IGBTs for IXYS constructor with temperature. Moreover, the forward blocking capability of IXGH-IGBT under a coupled Functional - Electro stress at high temperature was analyzed using simulation. This paper gives a straight comparison in term of the stress for improving the switching speed of IGBT device. This study is essential to ensure product reliability and to the evaluation of hot carrier reliability in the early stages. Furthermore, our reliability study permits us to improve the implantation of the device in a circuit, as well as its use in industrial operating conditions. The need for good simulator (Spice, Spice) to carry out a reliability study is pointed out in this paper.
Źródło:
Poznan University of Technology Academic Journals. Electrical Engineering; 2013, 76; 275-284
1897-0737
Pojawia się w:
Poznan University of Technology Academic Journals. Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling the influence of self-heating on characteristics of IGBTs in the sub-threshold region
Autorzy:
Górecki, K.
Górecki, P.
Powiązania:
https://bibliotekanauki.pl/articles/397748.pdf
Data publikacji:
2014
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
IGBT
electrothermal model
self-heating
SPICE
model elektrotermiczny
samonagrzewanie
Opis:
The paper refers to modelling characteristics of IGBT in SPICE software with self-heating taken into account. The form of the electrothermal model of the considered transistor and equations describing this model are proposed. The correctness of the proposed model is verified experimentally during the operation of the examined transistor at different cooling conditions. Particular attention is paid to the non-typical course of characteristics of the considered device at weak excitation. The shape of the obtained characteristics is discussed and the influence of the sub-threshold effect in the input MOS structure on these characteristics is analysed.
Źródło:
International Journal of Microelectronics and Computer Science; 2014, 5, 4; 149-154
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Thermal Phenomena on dc Characteristics of the IGBT
Autorzy:
Górecki, P.
Górecki, K.
Powiązania:
https://bibliotekanauki.pl/articles/227059.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
IGBT
thermal phenomena
measurements
DC characteristics
sub-threshold region
Opis:
The paper concerns the study of the effect of thermal phenomena on characteristics of the IGBT. The used measurement set-ups and the results of measurements of dc characteristics of the selected transistor obtained under different cooling conditions are presented. The influence of the ambient temperature and the applied cooling system on the shape of these characteristics is discussed. In particular, attention has been paid to the untypical shape of non-isothermal characteristics of this element in the subthreshold range.
Źródło:
International Journal of Electronics and Telecommunications; 2018, 64, 1; 71-76
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A comparison study of the features of DC/DC systems with Si IGBT and SiC MOSFET transistors
Badania porównawcze sprawności układów DC/DC z tranzystorami Si IGBT oraz tranzystorami SiC typu MOSFET
Autorzy:
Fatyga, K.
Kwaśny, Ł.
Stefańczak, B.
Powiązania:
https://bibliotekanauki.pl/articles/408426.pdf
Data publikacji:
2018
Wydawca:
Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
Tematy:
IGBT
SiC
transistor
MOSFET
DC/DC converter
tranzystor
przekształtnik DC/DC
Opis:
This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.
W artykule zaprezentowano badania porównawcze sprawności dwóch dwukierunkowych przekształtników DC/DC wykonanych w topologii podwójnego mostka H. Badane przekształtniki wykonano w technologii krzemowej z tranzystorami IGBT oraz w technologii węglika krzemu z tranzystorami SiC MOSFET. Rezultatem badań są charakterystyki sprawności uzyskane z testów przy częstotliwości pracy w zakresie 10÷60 kHz. Analiza uzyskanych wyników wskazuje na zdecydowaną przewagę rozwiązania wykonanego w technologii węglika krzemu nad rozwiązaniem z tranzystorami krzemowymi IGBT
Źródło:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2018, 8, 2; 68-71
2083-0157
2391-6761
Pojawia się w:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling and simulation of sinusoidal pulse width modulation controller for solar photovoltaic inverter to minimize the switching losses and improving the system efficiency
Autorzy:
Panneerselvam, Sivaraj
Kandasamy, Karunanithi
Perumal, Chandrasekar
Powiązania:
https://bibliotekanauki.pl/articles/2135736.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
efficiency
IGBT
MOSFET
PV inverter
MATLAB/SIMULINK
SPWM controller
switching loss
Opis:
With the extinction of fossil fuels and high increase in power demand, the necessity for renewable energy power generation has increased globally. Solar PV is one such renewable energy power generation, widely used these days in the power sector. The inverters used for power conversion suffer from power losses in the switching elements. This paper aims at the detailed analysis on switching losses in these inverters and also aims at increasing the efficiency of the inverter by reducing losses. Losses in these power electronic switches vary with their types. In this analysis the most widely used semiconductor switches like the insulated gate bipolar transistor (IGBT) and metal oxide semiconductor field effect transistor (MOSFET) are compared. Also using the sinusoidal pulse width modulation (SPWM) technique, improves the system efficiency considerably. Two SPWM-based singlephase inverters with the IGBT and MOSFET are designed and simulated in a MATLAB Simulink environment. The voltage drop and, thereby, the power loss across the switches are compared and analysed. The proposed technique shows that the SPWM inverter with the IGBT has lower power loss than the SPWM inverter with the MOSFET.
Źródło:
Archives of Electrical Engineering; 2022, 71, 3; 615--626
1427-4221
2300-2506
Pojawia się w:
Archives of Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison between thermal simulation results generated by PLECS software and laboratory measurements
Autorzy:
Mysiński, Wojciech
Sysło, Bartłomiej
Powiązania:
https://bibliotekanauki.pl/articles/377458.pdf
Data publikacji:
2019
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
thermal simulation
PLECS
buck converter
thermal time constant
IGBT
diode
power losses
Opis:
This article deals with the subject of simulation of power losses and thermal processes occurring in semiconductors, as illustrated by an example of a DC/DC buck converter. The simulations were performed in PLECS software. The results obtained from the program were compared with measurement results of a laboratory converter model. The physical model is based on the same components as assumed in the simulation. Similarly, the parameters of the transistor control signal were the same. During operation of the converter, the temperature changes were analyzed using a K-type thermocouple. Based on the obtained results of the temperature measurement in the steady state of the converter operation, the correctness of the simulation carried out in the PLECS program was verified and confirmed.
Źródło:
Poznan University of Technology Academic Journals. Electrical Engineering; 2019, 99; 29-40
1897-0737
Pojawia się w:
Poznan University of Technology Academic Journals. Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of the Averaged Model of the Diode-transistor Switch for Modelling Characteristics of a Boost Converter with an IGBT
Autorzy:
Górecki, Paweł
Powiązania:
https://bibliotekanauki.pl/articles/226814.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
DC-DC converter
IGBT
boost converter
averaged model
diode-transistor switch
modelling
SPICE
Opis:
DC-DC converters are popular switch-mode electronic circuits used in power supply systems of many electronic devices. Designing such converters requires reliable computation methods and models of components contained in these converters, allowing for accurate and fast computations of their characteristics. In the paper, a new averaged model of a diode-transistor switch containing an IGBT is proposed. The form of the developed model is presented. Its accuracy is verified by comparing the computed characteristics of the boost converter with the characteristics computed in SPICE using a transient analysis and literature models of a diode and an IGBT. The obtained results of computations proved the usefulness of the proposed model.
Źródło:
International Journal of Electronics and Telecommunications; 2020, 66, 3; 555-560
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Electrical Performances of Power Electronics Switches and an Effective Switch Selection Algorithm
Autorzy:
Zenk, H.
Powiązania:
https://bibliotekanauki.pl/articles/1031000.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
power electronics switches (PES)
switch selection algorithm (SSA)
IGBT
MOSFET
BJT
diode
Opis:
Electronics switches commonly used in power electronics circuits are the part of the electronics system depending on energy efficiency, circuit topology, switching matrix design, interaction with filter elements, and many other parameters. For the first new switch design prototype to identify of electrical efficiency of the semiconductor switch working with a system, it is very important that estimation of the variables saves time, labor, and economical resources. In this study, the new algorithm is proposed and applied to circuit estimate efficiency of power electronics switches. The current-voltage-power capacities, switching rate, power losses, physical dimensions, heating levels of power electronics switches used in the circuit are investigated and algorithmically estimated according to the result of experimental performance switches.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 897-901
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evolution of Electric Traction Vehicle Design Based on the Example of Škoda Locomotives
Autorzy:
Graff, Marek
Powiązania:
https://bibliotekanauki.pl/articles/2203238.pdf
Data publikacji:
2022
Wydawca:
Instytut Kolejnictwa
Tematy:
locomotives
Skoda
electric motor start
thyristor
transistor
GTO
IGBT
ČD
ŽSR
CSD
Opis:
The article describes the evolution of Škoda electric locomotives, starting with vehicles supplied with 3 kV DC and 25 kV 50 Hz, initially featuring a resistor start-up (for DC supply), optionally high-voltage voltage regulation (for AC supply), and later with a pulse (thyristor) start-up. Th e railway network in Czechoslovakia was initially electrified with direct voltage (including the Prague junction); however, learning the advantages of the 25 kV 50 Hz voltage developed in Germany led to some new sections of the ČSD network being electrified with alternating current. At the same time, Czechoslovakia’s national manufacturer Škoda developed vehicles (locomotives, EMUs) suitable for DC and AC operation. Initially, these were single-system vehicles, as the development of multi-system ones was technically complicated at the time (only short-series production was practiced). The advent of pulse-starting traction motors not only provided more economical and simpler traction motor control but also simplified the construction of multi-system vehicles. The article discusses the specifics of both engine start-up systems and the evolution of DC and AC vehicle design and operation.
Źródło:
Problemy Kolejnictwa; 2022, 197; 117--145
0552-2145
2544-9451
Pojawia się w:
Problemy Kolejnictwa
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New approach to power semiconductor devices modeling
Autorzy:
Napieralski, A.
Napieralska, M.
Powiązania:
https://bibliotekanauki.pl/articles/308039.pdf
Data publikacji:
2004
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
power device modeling
SPICE
circuit simulation
VDMOS
PIN diode
IGBT
web-based simulation
Opis:
The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are explained. Traditional and novel concepts of power device simulation are presented. In order to make accurate and modern semiconductor device models widely accessible, a website has been designed and made available to Internet users, allowing them to perform simulations of electronic circuits containing high power semiconductor devices. In this software, a new distributed model of power diode has been included. Together with the existing VDMOS macromodel library, the presented approach can facilitate the design process of power circuits. In the future, distributed models of IGBT, BJT and thyristor will be added.
Źródło:
Journal of Telecommunications and Information Technology; 2004, 1; 80-89
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 17

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