Temat: GaN HEMT - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Predictive current control of three-phase matrix converter with GaN HEMT bidirectional switches
Autorzy:: Nowaszewski, K.
Sikorski, A.
Powiązania:: https://bibliotekanauki.pl/articles/202007.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: predictive control
matrix converter
GaN HEMT
LC filter
bidirectional switch
Opis:: This paper presents an analysis and simulation studies of three-phase matrix converter with GaN HEMT bidirectional switches with predictive control of grid currents and converter output currents. Two methods of grid currents shaping are described and compared. The first method is based on calculations of instantaneous grid reactive power and the second one uses the active power of the load. The analyzed converter works with the resistive-inductive load, and from the grid side the LC filter with damping resistor has been used.
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 5; 1077-1085
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures
Autorzy:: Gryglewicz, J
Stafiniak, A
Wosko, M
Prazmowska, J
Paszkiewicz, B
Powiązania:: https://bibliotekanauki.pl/articles/174309.pdf
Data publikacji:: 2013
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: reactive ione etching
HEMT
AlGaN/GaN heterostructure
Opis:: In this study, the results of reactive ion etching (RIE) process of diversified Al content AlxGa1–xN/AlN/GaN/sapphire heterostructures were presented. The Al fractions of 22, 25, 31 and 36% were examined. An impact of Al content in the heterostructures on the etch rates and surface morphology was investigated. The influence of used Cl2/BCl3/Ar gas mixture with varying of BCl3 flow on the etch rate of Al0.2Ga0.8N/GaN/sapphire, surface morphology and angle of mesa slope, was discussed.
Źródło:: Optica Applicata; 2013, 43, 1; 27-33
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 3.

Tytuł:: Analytical Model Development for Unified 2D Electron Gas Sheet Charge Density of AlInN/GaN MOSHEMT
Autorzy:: Amarnath, G.
Lenka, T. R.
Powiązania:: https://bibliotekanauki.pl/articles/227306.pdf
Data publikacji:: 2017
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: 2DEG
AlInN/GaN
MOS-HEMT
TCAD
Opis:: We have developed a unified analytical model for computation of 2D electron gas sheet charge density in AlInN/GaN metal-oxide-semiconductor high electron mobility transistor device structure. This model has been developed by incorporating the variation in lowest three energy sub-bands and Fermi level energy in the quantum-well with respect to gate voltage. We noticed that the dependency of lowest sub-band energy with Fermi energy having two fields, which are the lowest sub-band energy is greater and lesser than the Fermi level energy. According to these two fields, we have developed the fermi energy and sheet charge density expressions in each field. By combining each field of the models, developed a unified 2D electron gas sheet charge density model. The Fermi level and sheet charge density are interdependent in the model development. The developed model results are compared with TCAD simulation results and obtain a good consistency between them. This model is fitted to other metal-oxide-semiconductor high electron mobility transistor devices also with modifications in related physical values.
Źródło:: International Journal of Electronics and Telecommunications; 2017, 63, 4; 363-368
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 4.

Tytuł:: Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
Autorzy:: Taube, A.
Sochacki, M.
Szmidt, J.
Kamińska, E.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/226802.pdf
Data publikacji:: 2014
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: gallium nitride
MOS-HEMT
high electron mobility
transistor
AlGaN
GaN
simulation
Opis:: The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.
Źródło:: International Journal of Electronics and Telecommunications; 2014, 60, 3; 253-258
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "GaN HEMT" wg kryterium: Temat

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język