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Wyszukujesz frazę "Sochacki, M." wg kryterium: Autor


Wyświetlanie 1-14 z 14
Tytuł:
Propulsion system modeling for multi-satellite missions performer by nanosatellites
Modelowanie systemów napędowych dla wielosatelitarnych misji nanosatelitów
Autorzy:
Sochacki, M.
Narkiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/36393248.pdf
Data publikacji:
2018
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Lotnictwa
Tematy:
propulsion
nanosatellite
formation flying
constellations
fractionated satellite
federated satellite systems
napędy
nanosatelity
lot w formacji
konstelacje
frakcjonowanie satelitów
federacyjne systemy satelitarne
Opis:
Progress in miniaturization of satellite components allows complex missions to be performed by small spacecraft. Growing interest in the small satellite sector has led to development of standards such as CubeSat, contributing to lower costs of satellite development and increasing their service competitiveness. Small satellites are seen now as a prospective replacement for conventional sized satellites in the future, providing also services for demanding users. New paradigms of multi-satellite missions such as fractionation and federalization also open up new prospects for applications of small platforms. To perform a comprehensive simulation and analysis of future nanosatellite missions, an adequate propulsion system model must be used. Such model should account for propulsion solutions which can be implemented on nanosatellites and used in multisatellite missions. In the paper, concepts of distributed satellite systems (constellations, formations, fractionated and federated) are described with a survey of past, on-going and planned multi-satellite nanosatellites missions. Currently developed propulsion systems are discussed and the models of propulsion systems embedded in the WUT satellite simulation model are presented.
Postępująca miniaturyzacja podzespołów satelitarnych pozwala na realizację skomplikowanych misji przez małe satelity. Wzrost zainteresowania małymi satelitami przyczynił się do powstania standardów takich jak CubeSat, umożliwiając zmniejszenie kosztów budowy oraz wzrost konkurencyjności usług oferowanych przez małe satelity. Istnieje przekonanie, że w najbliższym czasie małe satelity zastąpią satelity duże oferując usługi także wymagającym użytkownikom. Nowe architektury misji wielosatelitarnych jak federacyjne systemy satelitarne czy frakcjonowanie satelitów wskazują nowe możliwości wykorzystania małych satelitów. Aby umożliwić zaawansowaną symulację i analizę nowych misji realizowanych przez nanosatelity konieczne jest wykorzystanie odpowiedniego modelu zespołu napędowego. Taki model powinien obejmować rozwiązania, które mogą zostać użyte na nanosatelitach do realizacji misji wielosatelitarnych. W artykule opisano architektury misji (konstelacje, formacje, federacje i frakcjonowanie), a także przedstawiono przegląd zakończonych, trwających i planowanych misji wielosatelitarnych wykorzystujących nanosatelity. Omówione są obecnie wykorzystywane systemy napędowe oraz zaprezentowany jest model systemu napędowego wykorzystanego w modelu symulacyjnym satelity opracowanym przez zespół autorów.
Źródło:
Transactions on Aerospace Research; 2018, 4 (253); 71-82
0509-6669
2545-2835
Pojawia się w:
Transactions on Aerospace Research
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Edge termination design for 1.7 kV silicon carbide p-i-n diodes
Autorzy:
Taube, A.
Sochacki, M.
Powiązania:
https://bibliotekanauki.pl/articles/199922.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
edge termination
silicon carbide
4H-SiC
p-i-n diode
breakdown voltage
JTE
Opis:
In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7 kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of the areas of the double-zone JTE (space-modulated JTE). The influence of geometry and the level of p-type doping in the JTE area as well as the charge as the interface between the p-type JTE area and the passivation layer on the diode breakdown voltage was studied. The effect of statistical dispersion of drift layer parameters (thickness, doping level) on diodes breakdown voltage with various JTE structures was investigated as well. The obtained results showed that the breakdown volatge values for a diode with single zone JTE are very sensitive both to the dose of JTE area and charge accumulated at the JTE/dielectric interface. The use of a double zone or space-modulated JTE structures allows for obtaining breakdown voltage above 1.7 kV for a much wider range of doping parameters and with better tolerance to positive charge at the JTE/dielectric interface, as well as better tolerance to statistical dispersion of active layer parameters compared to a single zone JTE structure.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 2; 367-375
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of $SiO_2$/n-Type 4H-SiC Interface
Autorzy:
Król, K.
Sochacki, M.
Szmidt, J.
Powiązania:
https://bibliotekanauki.pl/articles/1363825.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
68.55.ag
72.20.-i
72.25.-b
Opis:
Silicon carbide (SiC) is the only wide-bandgap semiconductor capable of forming native dielectric layer of $SiO_2$ by thermal oxidation. This unique property of SiC combined with its high thermal conductivity and high critical field makes this semiconductor material suitable for high power electronic devices. Unfortunately, the state-of-the art technology does not use the full benefits of the material, especially in the case of MOSFET transistors. This is caused by insufficient electrical parameters of $SiO_2$/SiC interface. Two-component structure of the material and its high density result in high level of interface traps reducing the surface mobility and thus increasing series resistance of the device. One of the proposed methods of reducing the trap density in SiC MOS structure is a shallow nitrogen implantation prior to oxidation. This technique is based on the observation that introducing nitrogen into the $SiO_2$/SiC system results in significant reduction of trap states density and increase of the channel effective mobility. The shallow implantation technique has been reported to be as much effective as nitric oxide annealing which is one of the most effective techniques for oxide quality improvement in case of SiC. Unlike the diffusion based techniques, like postoxidation annealing, implantation of the nitrogen prior oxidation has the possibility of nitrogen concentration control near the oxide interface during oxidation process itself. This property is important since it was shown that the improvement degree is directly proportional to amount of nitrogen built in the vicinity of $SiO_2$/SiC interface during oxidation. However, previous investigations about this technique were inconclusive about the influence of implantation parameters and process conditions on observed effects. Both improvement and deterioration of interface quality was observed by different researchers. This behavior was never explained clearly. The primary objective of this research is to analyze the impact of implantation conditions on electrical properties of $SiO_2$/SiC MOS structure. This analysis is used to evaluate a hypothetical description of physical phenomena during oxidation of shallowly implanted substrates.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1033-1037
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaN-based soft-switched active power buffer operating at ZCS – problems of start-up and shut-down
Autorzy:
Rąbkowski, J.
Król, K.
Zdanowski, M.
Sochacki, M.
Powiązania:
https://bibliotekanauki.pl/articles/201868.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
GaN
power inverter
active buffer
Opis:
This paper describes practical issues related to control of the active power buffer (APB) developed for a 2 kVA single-phase inverter. The buffer is designed using the latest GaN HEMTs controlled with triangular current mode to reduce switching losses, however, the switching frequency should be limited to 1 MHz. In the case of the presented analogue-digital controller, frequency is influenced by a reference current of the APB and circuit. Therefore, the operation at start-up and shut-down is especially challenging. A modified control algorithm that also includes pre-charging and discharging process of the energy buffer is presented and experimentally verified by series of tests of the 2 kVA GaN based inverter with the APB.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 4; 785-792
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of Stacked ZrO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:
Król, K.
Kwietniewski, N.
Gierałtowska, S.
Wachnicki, Ł.
Sochacki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1033217.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.16.Pr
77.84.Bw
77.55.dj
Opis:
The electronic properties of ZrO₂/SiO₂ stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO₂ layer has been observed as a function of deposition temperature T. The values within the range of κ≈16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO₂ dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 329-331
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of Phosphorus Incorporation into $SiO_2$/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
Autorzy:
Król, K.
Konarski, P.
Miśnik, M.
Sochacki, M.
Szmidt, J.
Powiązania:
https://bibliotekanauki.pl/articles/1376053.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.16.Pr
77.84.Bw
77.55.Dj
Opis:
This paper describes the influence of phosphorus incorporation into $SiO_2$/4H-SiC system. The main scope is an analysis of the slow responding trap states (near interface traps) since the influence of phosphorus technology on fast traps has already been investigated by numerous research groups. Two different phosphorus incorporation methods were incorporated - the diffusion-based process of $POCl_3$ annealing and ion implantation. We have shown that regardless of method used a new distinct near interface trap center can be found located approximately at $E_{V}$ + 3.0 eV. This trap can be related to the incorporated phosphorus amount as shown through secondary ion mass spectroscopy measurements.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1100-1103
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
Autorzy:
Taube, A.
Sochacki, M.
Szmidt, J.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/226802.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
gallium nitride
MOS-HEMT
high electron mobility
transistor
AlGaN
GaN
simulation
Opis:
The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.
Źródło:
International Journal of Electronics and Telecommunications; 2014, 60, 3; 253-258
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Depth Profile Analysis of Phosphorus Implanted SiC Structures
Autorzy:
Konarski, P.
Król, K.
Miśnik, M.
Sochacki, M.
Szmidt, J.
Turek, M.
Żuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402214.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.49.Sf
68.55.Ln
82.80.Ms
85.40.Ry
Opis:
Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 864-866
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Damped vibration of the system of changing the crane boom radius
Autorzy:
Sochacki, W.
Bold, M.
Powiązania:
https://bibliotekanauki.pl/articles/122516.pdf
Data publikacji:
2015
Wydawca:
Politechnika Częstochowska. Wydawnictwo Politechniki Częstochowskiej
Tematy:
truck crane
damped vibration
eigenvalues
Opis:
This study formulates and solves the problem of transverse damped vibration in the system of changing the boom radius in a truck crane with advanced cylinder design for controlling the boom radius. The dissipation of vibration energy in the model adopted in the study occurs as a result of internal damping of the viscoelastic material (rheological Kelvin-Voigt model) of the beams that model the system and movement resistance in the supports of the cylinder and crane boom to the bodywork frame of the crane. Damped frequencies of vibrations and degree of vibration amplitude decay were calculated. The study also presents eigenvalues of system vibration with respect to changes in damping coefficients and system geometry for a selected load.
Źródło:
Journal of Applied Mathematics and Computational Mechanics; 2015, 14, 2; 111-122
2299-9965
Pojawia się w:
Journal of Applied Mathematics and Computational Mechanics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transverse and longitudinal damped vibration of the Γ type frame
Autorzy:
Sochacki, W.
Bold, M.
Powiązania:
https://bibliotekanauki.pl/articles/122884.pdf
Data publikacji:
2016
Wydawca:
Politechnika Częstochowska. Wydawnictwo Politechniki Częstochowskiej
Tematy:
damped vibrations
Γ frame
transverse and longitudinal vibrations
tłumienie drgań
drgania poprzeczne
drgania podłużne
Opis:
In this paper, the problem of transverse and longitudinal damped vibration of the Γ type frame was formulated and solved. The effect of constructional damping of the column support and fixing bolt frame support on degree of vibration amplitude decay was presented. The vibration energy dissipation in the model (modelled by the rotational viscous dampers) is a result of the movement resistance taken into account in the frame supports. The eigenvalues of the system with respect to changes in system geometry and for a selected and variable damping coefficient values were calculated.
Źródło:
Journal of Applied Mathematics and Computational Mechanics; 2016, 15, 2; 147-155
2299-9965
Pojawia się w:
Journal of Applied Mathematics and Computational Mechanics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transverse and longitudinal damped vibrations of hydraulic cylinder in a mining prop
Autorzy:
Sochacki, W.
Bold, M.
Powiązania:
https://bibliotekanauki.pl/articles/128288.pdf
Data publikacji:
2016
Wydawca:
Politechnika Poznańska. Instytut Mechaniki Stosowanej
Tematy:
damped vibration
hydraulic cylinder
transverse vibration
longitudinal vibration
drgania tłumione
siłownik hydrauliczny
drgania poprzeczne
drgania wzdłużne
Opis:
This study presents the influence of different kinds of damping on transverse and longitudinal vibrations of hydraulic cylinder in a mining prop. The dissipation of vibration energy in the model is caused by simultaneous internal damping of viscoelastic material of beams that model the system, external viscous damping and constructional damping. Constructional damping (modelled by the rotational viscous dampers) occurs as a result of movement resistance in the cylinder supports. The eigenvalues of the system with respect to changes in system geometry with two values of load and for a selected and variable damping coefficient values were calculated.
Źródło:
Vibrations in Physical Systems; 2016, 27; 317-324
0860-6897
Pojawia się w:
Vibrations in Physical Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vibration of crane radius change system with internal damping
Autorzy:
Sochacki, W.
Bold, M.
Powiązania:
https://bibliotekanauki.pl/articles/122494.pdf
Data publikacji:
2013
Wydawca:
Politechnika Częstochowska. Wydawnictwo Politechniki Częstochowskiej
Tematy:
truck crane
vibration damping
eigenvalues
żurawie samochodowe
tłumienie drgań
wartości własne
Opis:
In the present work a problem pertaining to the damped lateral vibrations of the truck crane radius change system with the developed hydraulic cylinder model that changes the radius has been formulated and solved. In the adopted model the vibration energy dissipation derives from the internal damping of the viscoelastic material (the Kelvin-Voigt rheological model) of beams that model the system. Damped vibration frequency and the vibration amplitude decay level have been calculated. Changes of the eigenvalues of system vibrations with the damping ratio change and the change of the system geometry with different loads observed on it have been presented.
Źródło:
Journal of Applied Mathematics and Computational Mechanics; 2013, 12, 2; 97-103
2299-9965
Pojawia się w:
Journal of Applied Mathematics and Computational Mechanics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Damped vibration of a non-prismatic beam with a rotational spring
Autorzy:
Sochacki, W.
Bold, M.
Powiązania:
https://bibliotekanauki.pl/articles/128035.pdf
Data publikacji:
2014
Wydawca:
Politechnika Poznańska. Instytut Mechaniki Stosowanej
Tematy:
vibration damping
non-prismatic beam
rotational spring
tłumienie drgań
belka niepryzmatyczna
sprężyna rotacyjna
Opis:
In this paper a problem pertaining to the damped lateral vibrations of a beam with different boundary conditions and with a rotational spring is formulated and solved. In the adopted model the vibration energy dissipation derives from the internal damping of the viscoelastic material (Kelvin–Voigt rheological model) of the beam and from the resistance motion in the supports. The rotational spring can be mounted at any chosen position along the beam length. The influence of step changes in the cross-section of the beam on its damped lateral vibrations is also investigated in the paper. The damped vibration frequency and the vibration amplitude decay level are calculated. Changes in the eigenvalues of the beam vibrations along with the changes in the damping ratio and the change in the model geometry observed on it are also presented. The considered beam was treated as Euler- Bernoulli beam.
Źródło:
Vibrations in Physical Systems; 2014, 26; 251-256
0860-6897
Pojawia się w:
Vibrations in Physical Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
eBalticGrid – an interactive platform for the visualisation of results from a high-resolution operational Baltic Sea model
Autorzy:
Jakacki, J.
Przyborska, A.
Nowicki, A.
Wichorowski, M.
Przyborski, M.
Białoskórski, M.
Sochacki, C.
Tylman, R.
Powiązania:
https://bibliotekanauki.pl/articles/108447.pdf
Data publikacji:
2017
Wydawca:
Instytut Meteorologii i Gospodarki Wodnej - Państwowy Instytut Badawczy
Tematy:
multimodelling
Baltic Sea
forecasting
hydrodynamic model
ice model
Opis:
In recent years, modelling has been one of the fastest growing fields of science. Ocean, ice and atmospheric models have become a powerful tool that has supported many scientific fields during the last few decades. Our work presents the new operational service – called eBalticGrid – implemented into the PLGrid Infrastructure (Dziekoński et al. 2014). The grid is based on three modelling tools – an ocean model (Parallel Ocean Program), an ice model (Community Ice Code) and an atmospheric model (Whether Research and Forecasting Model). The service provides access to 72-hour forecasts for the Baltic Sea area. It includes the physical state of the Baltic Sea, its ice cover and the main atmospheric fields, which are the key drivers of the Baltic’s physical state. Unlike other services, this provides the additional three-dimensional fields of temperature, salinity and currents in the Baltic Sea. The models work in operational mode and currently one simulation per day is run. The service has been implemented mostly for researchers. Access to the results does not require any modelling knowledge. Therefore, the main interface between a user and the model results was designed as a portal providing easy access to the model’s output. It will also be a very suitable tool for teaching students about the hydrology of the Baltic Sea. Data from the system are delivered to another operational system – SatBaltic (Woźniak et al. 2011). The development of an output format to be suitable for navigational software (GRIB files) and sharing via FTP is also planned.
Źródło:
Meteorology Hydrology and Water Management. Research and Operational Applications; 2017, 5, 2; 13-20
2299-3835
2353-5652
Pojawia się w:
Meteorology Hydrology and Water Management. Research and Operational Applications
Dostawca treści:
Biblioteka Nauki
Artykuł
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