Autor: Makosa, K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Native Defects in Gallium Arsenide Grown by Synthesis, Solute Diffusion Method
Autorzy:: Fronc, K.
Mąkosa, A.
Wosiński, T.
Powiązania:: https://bibliotekanauki.pl/articles/1890874.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.70.-r
71.55.Eq
Opis:: High-purity n-type GaAs crystal was grown by the Synthesis, Solute Diffusion (SSD) method. Deep Level Transient Spectroscopy (DLTS) characterization of the crystal revealed three deep traps related to native defects. Microscopic origin of the traps is discussed and prospective use of SSD-grown GaAs as a bulk material with the high luminescence efficiency is emphasized.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 349-352
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Native Deep-Level Defects in MBE-Grown p-Type CdTe
Autorzy:: Olender, K.
Wosiński, T.
Mąkosa, A.
Dłużewski, P.
Kolkovsky, V.
Karczewski, G.
Powiązania:: https://bibliotekanauki.pl/articles/1492964.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Gs
68.37.Lp
61.72.J-
61.72.Lk
Opis:: Deep-level transient spectroscopy was used to study the defect levels in p-type CdTe layers grown by the molecular-beam epitaxy technique on lattice-mismatched GaAs substrates. In our measurements we have observed five hole traps. Two of the traps, displaying exponential capture kinetics, have been assigned to native point defects, the Cd vacancy and a complex formed of Cd vacancy and Te antisite, produced in the CdTe layers during their growth. The other two traps have been attributed to electronic states of threading dislocations on the ground of their logarithmic capture kinetics. The last trap, which was observed only when the investigated space charge region was close to the metal-semiconductor interface, has been ascribed to surface states.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 946-949
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation
Autorzy:: Figielski, T.
Mąkosa, A.
Wosiński, T.
Harness, P. C.
Singer, K. E.
Powiązania:: https://bibliotekanauki.pl/articles/1929767.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Gk
85.30.Mn
Opis:: We investigated current-voltage and photocurrent-voltage characteristics of a double-barrier resonant tunneling structure based on AlGaAs. To explain the observed "double-step" feature of the characteristics, we have proposed a mechanism including a multiple phonon emission of an electron dwelling in the quantum well.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 817-819
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Fabrication and Electrical Characterization of PbS-EuS Ferromagnetic Semiconductor Microstructures
Autorzy:: Wrotek, S.
Morawski, A.
Tkaczyk, Z.
Mąkosa, A.
Wosiński, T.
Dybko, K.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Pécz, B.
Grasza, K.
Szczerbakow, A.
Wróbel, J.
Powiązania:: https://bibliotekanauki.pl/articles/2038135.pdf
Data publikacji:: 2004-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.61.Le
75.30.Et
75.70.Cn
Opis:: Current-voltage characteristics and temperature dependence of differential conductance were studied in lithographically patterned (lateral dimensions from 10 x 10 μm$\text{}^{2}$ to 100 x 100 μm$\text{}^{2}$) ferromagnetic EuS-PbS-EuS microstructures. Below the ferromagnetic transition temperature a 4% decrease in the structure conductance was observed for mutual antiferromagnetic orientation of magnetization vectors of ferromagnetic EuS layers.
Źródło:: Acta Physica Polonica A; 2004, 105, 6; 615-620
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Vertical Electron Transport through PbS-EuS Structures
Autorzy:: Wrotek, S.
Dybko, K.
Morawski, A.
Mąkosa, A.
Wosiński, T.
Figielski, T.
Tkaczyk, Z.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Szczerbakow, A.
Grasza, K.
Wróbel, J.
Palosz, W.
Powiązania:: https://bibliotekanauki.pl/articles/2036032.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 629-635
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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