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Wyświetlanie 1-10 z 10
Tytuł:
Magnetisation and hydrogenation of Mg/Ni multilayers
Autorzy:
Pacanowski, S.
Marczyńska, A.
Dawczak-Dębicki, H.
Jabłoński, B.
Szymański, B.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1048263.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Cn
61.10.Nz
Opis:
In this contribution we have studied magnetisation of Mg/Ni multilayers (MLs) to characterise the alloing effect near interfaces. The layered structure was characterised by standard X-ray diffraction. The MLs were deposited by UHV magnetron sputtering onto naturally oxidised Si(100) substrates. Results showed, that due to Mg-Ni alloy formation near interfaces the magnetizations of the MLs were strongly reduced. Effective "dead" Ni layer thickness was estimated as 1.2 nm at room temperature (RT). Furthermore, hydrogen absorption kinetics at a pressure of about 1000 mbar was studied at RT in Pd covered Mg/Ni MLs using four-point resistivity measurements. Results showed that the fastest initial rise in resistance in the first 9 s was observed for d_{Ni}=3.5 nm.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 617-619
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Valence Band Modifications on Hydrogen Absorption in Zr-Pd Alloy Thin Films
Autorzy:
Jabłoński, B.
Pacanowski, S.
Werwiński, M.
Marczyńska, A.
Dawczak-Dębicki, H.
Szajek, A.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1030742.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
82.80.Pv
Opis:
We study the valence band modifications of in-situ prepared nano- and polycrystalline Pd-Zr alloy thin films using X-ray photoelectron spectroscopy. Results were compared with valence bands calculated by ab initio methods. Furthermore, hydrogen absorption and desorption kinetics under pressure of about 570 mbar were studied in Pd covered nanocrystalline ZrPd₂ alloy thin film. Results showed that modifications of the valence band of the nanocrystalline alloy thin film could significantly influence on hydrogen absorption and desorption process.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 620-623
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exchange coupling effects in naturally oxidised ultrathin iron film
Autorzy:
Dawczak-Dębicki, H.
Marczyńska, A.
Rogowska, A.
Wachowiak, M.
Nowicki, M.
Pacanowski, S.
Jabłoński, B.
Czajka, R.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1050673.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
75.70.Kw
Opis:
Oxidation process of Fe films under atmospheric conditions is depth limited such that an oxide covering layer with a well-defined thickness is formed by which the underlying metal is prevented from further oxidation. Iron thin film with an initial thickness d_{i}=4 nm was deposited onto 1.6 nm - V(110) buffer layer using UHV magnetron sputtering. The planar growth of Fe oxides was revealed by atomic force microscopy. X-ray photoelectron spectroscopy studies performed after 250 days of oxidation revealed formation of a hematite (α-Fe₂O₃) ultrathin film on the metallic rest of iron. Furthermore, low temperature magnetic measurements of the oxidised Fe ultrathin film revealed an exchange anisotropy which is imposed to the metallic rest. As a result, we have observed at low temperatures a shift and broadening of the hysteresis loops due to the exchange interaction at the metal-oxide interface.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 601-604
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Natural xidation of thin Fe films on V buffer layer
Autorzy:
Dawczak-Dębicki, H.
Marczyńska, A.
Rogowska, A.
Wachowiak, M.
Nowicki, M.
Pacanowski, S.
Jabłoński, B.
Kowalski, W.
Grembowski, J.
Czajka, R.
Smardz, L.
Powiązania:
https://bibliotekanauki.pl/articles/1055062.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
68.55.-a
Opis:
We have studied oxidation kinetics of Fe thin film under atmospheric conditions using the fact that metallic iron is a ferromagnet but ultrathin natural iron oxides are approximately nonmagnetic at room temperature. As a consequence, oxidation is associated with a loss in total Fe magnetic moment. Results show that the sample with an initial Fe thickness equal to 10 nm oxidize relatively fast (time constant τ=0.05 day), whereby a constant amount of 2.5 nm of metal is transformed into oxides. For lower iron initial thickness (d_{i}=4 nm) the time constant for oxidation significantly increases reaching a value of 2 days. Furthermore, X-ray photoelectron spectroscopy studies performed after 144 days of oxidation revealed formation of hematite (α-Fe₂O₃) thin film on the metallic rest of iron.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1272-1276
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mean Escape Depth of Signal Photoelectrons from Amorphous and Polycrystalline Solids
Autorzy:
Tilinin, I. S.
Jabłoński, A.
Lesiak-Orłowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1931766.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
34.80.Bm
72.10.Bg
79.60.-i
Opis:
Escape depth of photoelectrons leaving a target without being scattered inelastically was submitted to extensive theoretical analysis. Dependence of the mean escape depth on the X-ray angle of incidence and the electron initial angular distribution inside the sample was considered. The Monte Carlo algorithm was developed basing on a differential elastic scattering cross-section calculated within the partial-wave expansion method and a realistic electron-atom interaction potential. The mean escape depth was evaluated by means of the depth distribution function found analytically by solving a kinetic equation and by the Monte Carlo technique. The agreement between the results obtained from two methods is excellent. Elastic scattering was found to reduce considerably the escape depth. This reduction may reach up to 25% in the case of heavy elements in the practical X-ray photoelectron spectroscopy analysis. It was shown that the mean escape depth expressed in units of the electron transport mean free path is a universal function of the ratio of the inelastic to the transport mean free paths, the asymmetry parameter and the X-ray angle of incidence. A simple explicit expression for this function is proposed.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 845-852
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signal Photoelectron Yield Dependence on the X-Ray Angle of Incidence
Autorzy:
Tilinin, I. S.
Jabłoński, A.
Lesiak-Orłowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1931768.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
34.80.Bm
72.10.Bg
79.60.-i
Opis:
The photoelectron emission from solids irradiated by X-rays was described by the analytical theory of electron transport and simulated by the Monte Carlo technique. The medium energy electron transport problem is treated by means of a Boltzmann type kinetic equation satisfying appropriate boundary conditions. The solution of the transport equation was obtained in the transport approximation based on the generalized radiative field similarity principle. Simple and reliable formalism was derived for both the differential and the total photoelectron yields. The dependence of the photoelectron yield on the X-ray incidence angle and the "flattening" effect of multiple elastic scattering on the angular distribution of electrons leaving the target are analysed in detail. The photoelectron yields and angular distributions calculated by the Monte Carlo algorithm, based on a realistic differential elastic scattering cross-section, are in good agreement with the results found from analytical theory. It is shown that main characteristics of the photoelectron emission are determined primarily by two parameters: the inelastic and the transport mean free paths.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 853-859
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Fe and Si Addition on the Properties and Structure Conductivity Aluminium
Autorzy:
Jabłoński, M.
Knych, T.
Mamala, A.
Smyrak, B.
Wojtaszek, K.
Powiązania:
https://bibliotekanauki.pl/articles/354843.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Al-Fe-Si alloy
horizontal direct chill casting
wire drawing process
electrical conductivity
Opis:
The effect of iron and silicon addition on the structure and properties of aluminium wire rod obtained in the laboratory horizontal direct chill casting process has been analysed. In addition, the impact of laboratory wire drawing process has been examined. The addition of iron and velocity of casting increase the strength of aluminium wire rod in as-cast condition while the electrical conductivity drop acceptable. Moreover, the laboratory wire drawing process causes work-hardening wires and increase drawing tension as a result of fragmentation of structure and growth of grain boundaries. It has been shown that iron is beneficial for mechanical and technological properties of aluminium.
Źródło:
Archives of Metallurgy and Materials; 2017, 62, 3; 1541-1547
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Recoil Effect and Surface Excitations on the Inelastic Mean Free Paths of Electrons in Polymers
Autorzy:
Lesiak, B.
Kosiński, A.
Jablonski, A.
Sulyok, A.
Gergely, G.
Tóth, J.
Varga, D.
Powiązania:
https://bibliotekanauki.pl/articles/2046849.pdf
Data publikacji:
2006-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
82.35.Cd
82.80.Pv
87.16.Ac
Opis:
In this work, the influence of recoil effect and surface excitations on the inelastic mean free paths for polythiophenes is investigated. The inelastic mean free paths of electrons in polythiophenes are measured with the elastic peak electron spectroscopy method using the Ag standard and the electron elastic scattering cross-sections from the database NIST 3.1 in the electron kinetic energy range 200-5000 eV. The Monte Carlo model is applied for evaluating the electron backscattering intensities from the polymers and the Ag standard, as well as for evaluating electrons quasi-elastically backscattered from atoms of different atomic numbers (the recoil effect). The surface excitation corrections are accounted for using the formalism of Chen, with the material parameters for polythiophenes evaluated from the elastic peak electron spectroscopy method. Deviations due to recoil effect and surface excitations to the inelastic mean free paths are compared and discussed. Correction to the inelastic mean free paths due to recoil effect is considerable but is smaller, however, than the correction due to surface excitations. Accounting for recoil effect and surface excitations leads to improvement of the inelastic mean free paths, as compared to the inelastic mean free paths resulting from the predictive formulae of Gries.
Źródło:
Acta Physica Polonica A; 2006, 109, 6; 789-800
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Software for data acquisition AMC module with PCI express interface
Autorzy:
Szachowałow, S.
Jabłoński, G.
Sakowicz, B.
Makowski, D.
Butkowski, Ł.
Koprek, W.
Simrock, S.
Powiązania:
https://bibliotekanauki.pl/articles/397909.pdf
Data publikacji:
2010
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
akcelerator liniowy
przetwornik analogowo-cyfrowy
linear accelerator
advanced mezzanine card
analog to digital converter
PCI express
Opis:
Free Electron Laser in Hamburg (FLASH) and X-Ray Free Electron Laser (XFEL) are linear accelerators that require a complex and accurate Low Level Radio Frequency (LLRF) control system. Currently working systems are based on aged Versa Module Eurocard (VME) architecture. One of the alternatives for the VME bus is the Advanced Telecommunications and Computing Architecture (ATCA) standard. The ATCA based LLRF controller mainly consists of a few ATCA carrier boards and several Advanced Mezzanine Cards (AMC). AMC modules are available in variety of functions such as: ADC, DAC, data storage, data links and even CPU cards. This paper focuses on the software that allows user to collect and plot the data from commercially available TAMC900 board.
Źródło:
International Journal of Microelectronics and Computer Science; 2010, 1, 1; 95-98
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evaluation of an ATCA-based LLRF system at FLASH
Autorzy:
Simrock, S.
Butkowski, Ł.
Grecki, M.
Jeżyński, T.
Koprek, W.
Jabłoński, G.
Jałmużna, W.
Makowski, D.
Piotrowski, A.
Sakowicz, B.
Czuba, K.
Powiązania:
https://bibliotekanauki.pl/articles/397843.pdf
Data publikacji:
2010
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
akcelerator
sterowanie
sprzężenie zwrotne
accelerator
control
feedback
Advanced TCA
Opis:
Future RF Control systems will require simultaneous data acquisition of up to 100 fast ADC channels at sampling rates of around 100 MHz and real time signal processing within a few hundred nanoseconds. At the same time the standardization of Low-Level RF systems are common objectives for all laboratories for cost reduction, performance optimization and machine reliability. Also desirable are modularity and scalability of the design as well as compatibility with accelerator instrumentation needs including the control system. All these requirements can be fulfilled with the new telecommunication standard ATCA when adopted to the domain of instrumentation. We describe the architecture and design of an ATCA based LLRF system for the European XFEL. Initial results of the demonstration of such a system at the FLASH user facility will be presented. Presented are the results of operating essential components of a prototype during the machine studies in January and March 2009.
Źródło:
International Journal of Microelectronics and Computer Science; 2010, 1, 1; 48-51
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-10 z 10

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