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Wyszukujesz frazę "Domański, H." wg kryterium: Autor


Wyświetlanie 1-7 z 7
Tytuł:
Laboratory stand for the analysis of conducted disturbances in the car electrical circuits
Autorzy:
Gonscz, D.
Urzędniczok, H.
Domański, W.
Powiązania:
https://bibliotekanauki.pl/articles/114397.pdf
Data publikacji:
2017
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
automotive EMC testing
measurements of conducted disturbances
immunity tests against typical disorders
Opis:
The paper deals with technical aspects of the measurements of conducted disturbance levels in the electrical circuits of typical car vehicles. The work includes project, execution and a testing of new laboratory stand for analysis disturbances in the electrical circuits of car. The block diagram of the laboratory stand is shown in Fig. 1. Designed structure of the electrical installation is typical for the classic cars. The structure includes only the basic electrical circuits. The voltage level assumed in the installation is equal 12 VDC (car accumulator power supply). The commercial car loads (lighting, audio, ignition system, low power electric motors, etc.) are installed in the laboratory stand (Fig. 2). The selected test results of the laboratory stand (ignition system and power supply parameters in circuits) are presented in the chapter 3. The laboratory stand also allows to execute among others the immunity tests of selected components against electrostatic discharges.
Źródło:
Measurement Automation Monitoring; 2017, 63, 8; 271-274
2450-2855
Pojawia się w:
Measurement Automation Monitoring
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Optical Properties of Protonated Polyazomethine Thin Films
Autorzy:
Bednarski, H.
Weszka, J.
Domański, M.
Cozan, V.
Powiązania:
https://bibliotekanauki.pl/articles/1492962.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
78.20.Bh
78.40.Me
Opis:
We report results of experimental studies supplemented with the first principles calculations aimed to explain influence of doping on electronic and optoelectronic properties of thin PPI films. It has been predicted theoretically and confirmed experimentally that chemical doping with the HCl acid vapor is thermally reversible process due to relatively low energy barrier for protonation.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 939-941
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Transport Properties of Single Layer Devices Based on the Polyazomethine Thin Films
Autorzy:
Weszka, J.
Domański, M.
Jurusik, J.
Hajduk, B.
Chwastek, M.
Bednarski, H.
Powiązania:
https://bibliotekanauki.pl/articles/1492961.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
This work reports results of studies on transport properties of single-layer devices based on polyazomethine thin films with different metal electrodes. Recorded I-V characteristics of Au-PPI-Au and Au-PPI-Al structures were analyzed in detail. It appears that I-V characteristics of Au-PPI-Au structures are consistent with the Mott-Gurney law with the mobility value of $2× 10^{-6} cm^2$/(V s). Relatively low current in Au-PPI-Al devices is attributed to high value of the Schottky barrier and/or due to low density of longer conjugated segments in polyazomethine thin films.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 936-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resistance to Phytophthora infestans in diploid and tetraploid potato families. 1. Resistance in detached leaflets
Autorzy:
Swiezynski, K M
Domanski, L
Osiecka, M
Sieczka, M T
Zarzycka, H
Powiązania:
https://bibliotekanauki.pl/articles/2046603.pdf
Data publikacji:
1997
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
tetraploid potato
Phytophthora infestans
inoculation
genotype
resistance
potato
detached leaflet
diploid potato
Opis:
Potato families, segregating for resistance to Phytophthora infestans, were tested repeatedly to evaluate the distribution of resistance to P. infestans, the repeatability of testing results and correlation between resistance and some other characters. Four diploid and four tetraploid families were evaluated together with their parents and with potato cultivars used as standard. For all inoculations a virulent fungus isolate MP 245 was used. Leaflets were collected from plants growing in the field (summer tests) or in a glasshouse (autumn and spring tests). Segregation of major genes determining resistance was detectable in most families. In families originating from mating a resistant parent with a susceptible partner some progeny genotypes with resistance level of the resistant parent could be identified. In families originating from two parents showing only some resistance, a transgression of resistance could be found in the progeny. The expression of resistance depended on testing conditions. Some genotypes were consistently superior or inferior in resistance under all testing conditions, but often repeated evaluations of genotypes did not provide consistent results and significant interactions genotypes x tests were detectable.
Źródło:
Journal of Applied Genetics; 1997, 38, 1; 19-32
1234-1983
Pojawia się w:
Journal of Applied Genetics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stability of Diodes with Poly(3-hexylthiophene) and Polyazomethines Thin Organic Layer
Autorzy:
Bednarski, H.
Gąsiorowski, J.
Domański, M.
Hajduk, B.
Jurusik, J.
Jarząbek, B.
Weszka, J.
Powiązania:
https://bibliotekanauki.pl/articles/1409596.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
Herein we report results of studies on stability of diodes based on organic semiconductors such as poly (3-hexylthiophene) (P3HT) and soluble derivative of polyazomethine poly(1,4-(2,5-bisoctyloxy phenylenemethylidynenitrilo)-1,4-phenylenenitrilomethylidyne), (BOO-PPI). Both polymers were deposited on glass/ITO substrate with or without covering with blocking layer: poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) and finished with Al back electrode. Prepared devices were studied by monitoring their electrical conductivity under nitrogen atmosphere and ambient air conditions. Under nitrogen atmosphere a marked influence of presence of the blocking layer on the diodes electrical conductivity was revealed. The P3HT diodes prepared without PEDOT:PSS thin film shown quick degradation, whereas presence of these layers stabilizes electrical conductivity in these devices. Inversely, the PPI based diodes without the PEDOT:PSS revealed stable conducting properties, while corresponding diodes with PEDOT:PSS layer showed degradation traces of their conducting properties.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1083-1086
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of PEDOT to PSS Ratio on the Optical Properties of PEDOT:PSS Thin Solid Films - Insight from Spectroscopic Ellipsometry
Autorzy:
Bednarski, H.
Hajduk, B.
Jurusik, J.
Jarząbek, B.
Domański, M.
Łaba, K.
Wanic, A.
Łapkowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1185991.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ph
78.20.Ci
78.66.Qn
Opis:
In this work, we study the influence of the PEDOT to PSS ratio on the optical properties of PEDOT:PSS thin solid films using spectroscopic ellipsometry and UV-vis spectrometry. In the data analysis, we develop a consisted composition dependent optical model of PEDOT:PSS. This enabled us to account for contributions from PSS part within the Tauc-Lorentz optical model and from PEDOT part within the Drude-Lorentz optical model. Moreover, we relate the optical properties of PEDOT:PSS thin solid films to their electrical specific conductivities in the frame of the generalized effective medium theory. Determined in this manner electrical conductivities of five commercially available water dispersions of PEDOT:PSS are compared with their nominal values.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1242-1244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology
Autorzy:
Barański, M.
Domański, K.
Grabiec, P.
Grodner, M.
Jaroszewicz, B.
Kociubiński, A.
Kucewicz, W.
Kucharski, K.
Marczewski, J.
Niemiec, H.
Sapor, M.
Tomaszewski, D.
Powiązania:
https://bibliotekanauki.pl/articles/308825.pdf
Data publikacji:
2005
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
SOI CMOS technology
pixel detector
test structure
Opis:
This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-_lm SOI wafer. Preliminary results of the measurements performed on both MOS SOI transistors and dedicated SOI test structures are described in detail.
Źródło:
Journal of Telecommunications and Information Technology; 2005, 1; 85-93
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-7 z 7

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