Studies of Transport Properties of Single Layer Devices Based on the Polyazomethine Thin Films

This work reports results of studies on transport properties of single-layer devices based on polyazomethine thin films with different metal electrodes. Recorded I-V characteristics of Au-PPI-Au and Au-PPI-Al structures were analyzed in detail. It appears that I-V characteristics of Au-PPI-Au structures are consistent with the Mott-Gurney law with the mobility value of $2× 10^{-6} cm^2$/(V s). Relatively low current in Au-PPI-Al devices is attributed to high value of the Schottky barrier and/or due to low density of longer conjugated segments in polyazomethine thin films.